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The (Al0.1Ga0.9)0.5In0.5P, four-element alloy, whose band is direct, is used to make optoelectronic devices. The wavelength of the material is about 630nm. When it is epitaxially grown by low press-metalorganic chemical vapor deposition(LP-MOCVD), its quality will depend on temperature, one of the most important conditions. So it is essential to find out the best temperature of growth. The quantum wells of the (Al0.1Ga0.9)0.5In0.5P are grown at 700 ℃, 680 ℃, 670 ℃ and 660 ℃ respectively. The best temperature, which is found out by the results of photoluminescence PL, is about 670 ℃. The reasons are given by the results of PL, surfaces of wafers and the flow field simulation of MOCVD. The revaporization of In at high temperature and the incorporation of O at low temperature can lead to bad quality. An available path to solve growth at high temperature is to increase the effective density of In.
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Keywords:
- AlGaInP /
- temperature /
- MOCVD
[1] Streubel K, Linder N, Wirth R, Jaeger A 2002 Selected Topics in Quantum Elect ron 8 321
[2] Kawata S, K0bayashi K, Gomyo A, Hino I, Suzuki T 1986 Electronics Letters 22 1265
[3] Soubervielle-Montalvo C, Vital-Ochoa O, de Anda F, Vazquez-Cortes D, Rodriguez A G, Melendez-Lira M, Mendez-Garcia V H 2011Thin Solid Films 520 53
[4] Lee Y J, Lee C J, Chen 2010 Journal of Quantum Electronics 46 1450
[5] Kondo M, Okada N, Domen K, Sugiura K, Anayama C, Tanahashi T 1994 J. Elec. Mat. 23 355
[6] Yu B, Li J J, Gai H X, Niu N H, Xing Y H, Deng J, Han J, Lian P, Shen G D 2005 Laser & Infrared 2005 181 (in Chinese) [俞波, 李建军, 盖红星, 牛南辉, 邢艳辉, 邓军, 韩军, 廉鹏, 沈光地 2005 激光与红外 2005 181]
[7] Jungthawan S, Kim K, Limpijumnong S 2010 Computational Materials Science 491 114
[8] Jou M J, Lin J F, Chang C M, Lin C H, Wu M C, Lee B J 1993 Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 32 4460
[9] Susaki W, Kakuda S, Inada T, Igawa T, Tomioka A 2009 Physica Status Solidi C: Current Topics in Solid State Physics 6 1517
[10] Soubervielle-Montalvo C, Vital-Ochoa O De Anda 2011 Thin Solid Films 520 53
[11] Dong J R, Chua S J, Wang Y J, Yuan H R 2004 Journal of Crystal Growth 269 408
[12] Zorn M, Trepk T, Schenk T, Zettler J T, Weyers M 2007 Journal of Crystal Growth 298(SI) 23
[13] Lin T, Zheng K, Wang C L, Ma X Y 2007 Journal of Crystal Growth 309 140
[14] Nishikawa Y, Suzuki M, Ishikawa M, Kokubun Y, Hatakoshi G 1992 Journal of Crystal Growth 123 181
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[1] Streubel K, Linder N, Wirth R, Jaeger A 2002 Selected Topics in Quantum Elect ron 8 321
[2] Kawata S, K0bayashi K, Gomyo A, Hino I, Suzuki T 1986 Electronics Letters 22 1265
[3] Soubervielle-Montalvo C, Vital-Ochoa O, de Anda F, Vazquez-Cortes D, Rodriguez A G, Melendez-Lira M, Mendez-Garcia V H 2011Thin Solid Films 520 53
[4] Lee Y J, Lee C J, Chen 2010 Journal of Quantum Electronics 46 1450
[5] Kondo M, Okada N, Domen K, Sugiura K, Anayama C, Tanahashi T 1994 J. Elec. Mat. 23 355
[6] Yu B, Li J J, Gai H X, Niu N H, Xing Y H, Deng J, Han J, Lian P, Shen G D 2005 Laser & Infrared 2005 181 (in Chinese) [俞波, 李建军, 盖红星, 牛南辉, 邢艳辉, 邓军, 韩军, 廉鹏, 沈光地 2005 激光与红外 2005 181]
[7] Jungthawan S, Kim K, Limpijumnong S 2010 Computational Materials Science 491 114
[8] Jou M J, Lin J F, Chang C M, Lin C H, Wu M C, Lee B J 1993 Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 32 4460
[9] Susaki W, Kakuda S, Inada T, Igawa T, Tomioka A 2009 Physica Status Solidi C: Current Topics in Solid State Physics 6 1517
[10] Soubervielle-Montalvo C, Vital-Ochoa O De Anda 2011 Thin Solid Films 520 53
[11] Dong J R, Chua S J, Wang Y J, Yuan H R 2004 Journal of Crystal Growth 269 408
[12] Zorn M, Trepk T, Schenk T, Zettler J T, Weyers M 2007 Journal of Crystal Growth 298(SI) 23
[13] Lin T, Zheng K, Wang C L, Ma X Y 2007 Journal of Crystal Growth 309 140
[14] Nishikawa Y, Suzuki M, Ishikawa M, Kokubun Y, Hatakoshi G 1992 Journal of Crystal Growth 123 181
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