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Effects of Ge profile on thermal characteristics of SiGe heterojunction bipolar transistor with non-uniform doping profile in base region

Zhang Yu-Jie Zhang Wan-Rong Jin Dong-Yue Chen Liang Fu Qiang Guo Zhen-Jie Xing Guang-Hui Lu Zhi-Yi

Citation:

Effects of Ge profile on thermal characteristics of SiGe heterojunction bipolar transistor with non-uniform doping profile in base region

Zhang Yu-Jie, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Fu Qiang, Guo Zhen-Jie, Xing Guang-Hui, Lu Zhi-Yi
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  • As is well known, base region is the design focus of bipolar junction transistor (BJT). Generally, the doping distribution in base is non-uniform. In this paper, the effects of different Gaussian dopings in the base on bulk temperature distribution, temperature dependences of current gain and cut-off frequency are first studied. It is found that current gain and cut-off frequency of BJT have positive temperature coefficients, and the temperature in bulk is high. Then, the effect of Ge composition distribution on these device parameters is investigated. It is found that the SiGe heterojunction bipolar transistors (HBTs) with box Ge composition distribution and trapezoidal Ge composition distribution have negative temperature coefficients of current gain and cut-off frequency, and have good bulk temperature distributions. Furthermore, the SiGe HBT with trapezoidal Ge profile has higher current gain and cut-off frequency, and its temperature insensitivity is kept. The good trade-off is made among the magnitudes of current gain and cut-off frequency, temperature sensitivity and bulk temperature distribution.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60776051, 61006059, 61006049), the Beijing Municipal Natural Science Foundation, China (Grant No. 4082007), the Beijing Municipal Trans-Century Talent Project, China (Grant No. 67002013200301), the Beijing Municipal Education Committee, China (Grant Nos. KM200710005015, KM200910005001), and Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality, China.
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    Zhang W R, Yang J W, Liu H J 2004 International Conference on Microwave and Milli-wave Technology (ICMMR/T) Beijing, China, 2004 p594

    [8]

    Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q, Ding C B 2011 Acta Phys. Sin. 60 078501-1 (in Chinese) [陈亮, 张万荣, 金冬月, 谢红云, 肖盈, 王任卿, 丁春宝 2011 物理学报 60 078501-1]

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    Kunihiro S 1991 IEEE Transactions on Electron Devices 38 2128

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    Rabbi F, Arafat Y, Ziaur Rahman Khan M 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) Kuala Lumpur, Malaysia, April 25-27 2011 p54

  • [1]

    Rahmani A, Seryasat O, Hosseini S E 2010 International Conference on Software Technology and Engineering(ICSTE) Kuala Lumpur, Malaysia, October 3-5, 2010 p404

    [2]

    Ma L, Gao Y 2009 Chin. Phys. B 18 303

    [3]

    Zhao X, Zhang W R, Jin D Y, Fu Q, Chen L, Xie H Y, Zhang Y J 2012 Acta Phys. Sin. 61 134401 (in Chinese) [赵昕, 张万荣, 金冬月, 付强, 陈亮, 谢红云, 张瑜洁 2012 物理学报 61 134401]

    [4]

    Xiao Y, Zhang W R, Jin D Y, Chen L, Wang R Q, Xie H Y 2011 Chin. Phys. Sin. 60 044402-1 (in Chinese) [肖盈, 张万荣, 金冬月, 陈亮, 王任卿, 谢红云 2011 物理学报 60 044402-1]

    [5]

    Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 物理学报 56 2890]

    [6]

    Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q 2011 Chin. Phys. B 20 018105-1

    [7]

    Zhang W R, Yang J W, Liu H J 2004 International Conference on Microwave and Milli-wave Technology (ICMMR/T) Beijing, China, 2004 p594

    [8]

    Chen L, Zhang W R, Jin D Y, Xie H Y, Xiao Y, Wang R Q, Ding C B 2011 Acta Phys. Sin. 60 078501-1 (in Chinese) [陈亮, 张万荣, 金冬月, 谢红云, 肖盈, 王任卿, 丁春宝 2011 物理学报 60 078501-1]

    [9]

    Kunihiro S 1991 IEEE Transactions on Electron Devices 38 2128

    [10]

    Rabbi F, Arafat Y, Ziaur Rahman Khan M 2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) Kuala Lumpur, Malaysia, April 25-27 2011 p54

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  • Abstract views:  5412
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Publishing process
  • Received Date:  01 August 2012
  • Accepted Date:  31 August 2012
  • Published Online:  05 February 2013

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