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Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell

Wang Li Zhang Xiao-Dan Yang Xu Wei Chang-Chun Zhang De-Kun Wang Guang-Cai Sun Jan Zhao Ying

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Study of the contact property between BZO and p-a-SiC in amorphous silicon solar cell

Wang Li, Zhang Xiao-Dan, Yang Xu, Wei Chang-Chun, Zhang De-Kun, Wang Guang-Cai, Sun Jan, Zhao Ying
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  • Highly conductive p-type microcrystalline silicon thin layer is inserted between the front layer (ZnO:B) and the window layer(p-a-SiC) in a p-i-n amorphous silicon solar cell, and the inserted layer is found to be able to eliminate the non-ohmic contact, which is caused by the difference in the work function between the ZnO:B and p-a-SiC. The properties of the p-type microcrystalline silicon are studied by varying layer thickness, hydrogen dilution ratio and B2H6/SiH4 ratio. The optimized p-type microcrystalline silicon film can have a dark conductivity as large as 4.2 S/cm at a thickeness of 20 nm. The p-i-n type amorphous silicon solar cell with the p-type microcrystalline silicon is shown to have a good open circuit voltage and fill factor compared with without the p-type microcrystalline silicon layer.
    • Funds: Project supported by the National Basic Research Program of China(Grant Nos. 2011CBA00706, 2011CBA00707), the National Natural Science Foundation of China(Grant No. 60976051), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0295).
    [1]

    Aberle A G 2009 Thin solids Films 517 4706

    [2]

    Green M A, Emery K, King D L, Hisikawa Y, Warta W 2006 Prog. Photovoltaics 14 45

    [3]

    Benagli S, Borrello D, Sauvain E V, Meier J 2009 Proceedings of the 24th EU PVSE C Hamburg, Germany, September 21-24, 2009 p293

    [4]

    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011Chin. Phys. B 20 108801

    [5]

    Ding L, Boccard M, Bugnon G, Benkhaira M, Nicolay S, Despeisse M, Meillaud F, Ballif C 2012 Sol. Energy Mater. Sol. Cells 98 331

    [6]

    Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127

    [7]

    Wanka H N, Schubert M B, Lotter E 1996 Sol. Energy Mater. Sol. Cells 41 519

    [8]

    Yamamoto K, Yoshida H, Kokame K 2003 Proc. 3rd World Conf. on Photovoltaic Energy Conversion Osaka, Japan, May 17-20, 2003 S2O-B9-03

    [9]

    Kroll U, Torres P, Meier J, Selvan J 2011 26th European Photovoltaic Solar Energy Conference and Exhibiton Hamburg, Germany, September 5-8, 2011 p2287

    [10]

    Yunaz I A, Kasashima S, Inthisang S 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Philadelphia, USA, June 7-12, 2009 p001592

    [11]

    Bailat J, Domine D, Schluchter R, Steinhauser J, Fay S, Freitas F 2000 31th IEEE Semiconductor Interface Specialists Conference (SISC) Sa Diego, USA, December 7-9, 2000 p1533

    [12]

    Zhu F, Zeng K, Hu J, Shen L, Zhang K 2005 Mater. Res. Soc. Symp. Proc. 872 211

    [13]

    Koval R J, Chen C, Ferreira G M, Ferlauto A S 2002 Appl. Phys. Lett. 81 1258

    [14]

    Kondo M, Fukawa M, Guo L, Matsuda A 2002 J. Non Cryst. Solids 302 108

    [15]

    Rath J K, Schropp R E I 1998 Solar Energy Materials and Solar Cells 53 189

    [16]

    Shah A 2003 Thin Film Silicon Solar Cells (1st Edn.) (Switzerland: CRC Press) p311

    [17]

    Ballif C, Meillaud F, Feltrin A, Billet A 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p941

    [18]

    Kobayashi T, Kawagishi T, Fukumuro N 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p984

  • [1]

    Aberle A G 2009 Thin solids Films 517 4706

    [2]

    Green M A, Emery K, King D L, Hisikawa Y, Warta W 2006 Prog. Photovoltaics 14 45

    [3]

    Benagli S, Borrello D, Sauvain E V, Meier J 2009 Proceedings of the 24th EU PVSE C Hamburg, Germany, September 21-24, 2009 p293

    [4]

    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011Chin. Phys. B 20 108801

    [5]

    Ding L, Boccard M, Bugnon G, Benkhaira M, Nicolay S, Despeisse M, Meillaud F, Ballif C 2012 Sol. Energy Mater. Sol. Cells 98 331

    [6]

    Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Soderstrom T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127

    [7]

    Wanka H N, Schubert M B, Lotter E 1996 Sol. Energy Mater. Sol. Cells 41 519

    [8]

    Yamamoto K, Yoshida H, Kokame K 2003 Proc. 3rd World Conf. on Photovoltaic Energy Conversion Osaka, Japan, May 17-20, 2003 S2O-B9-03

    [9]

    Kroll U, Torres P, Meier J, Selvan J 2011 26th European Photovoltaic Solar Energy Conference and Exhibiton Hamburg, Germany, September 5-8, 2011 p2287

    [10]

    Yunaz I A, Kasashima S, Inthisang S 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Philadelphia, USA, June 7-12, 2009 p001592

    [11]

    Bailat J, Domine D, Schluchter R, Steinhauser J, Fay S, Freitas F 2000 31th IEEE Semiconductor Interface Specialists Conference (SISC) Sa Diego, USA, December 7-9, 2000 p1533

    [12]

    Zhu F, Zeng K, Hu J, Shen L, Zhang K 2005 Mater. Res. Soc. Symp. Proc. 872 211

    [13]

    Koval R J, Chen C, Ferreira G M, Ferlauto A S 2002 Appl. Phys. Lett. 81 1258

    [14]

    Kondo M, Fukawa M, Guo L, Matsuda A 2002 J. Non Cryst. Solids 302 108

    [15]

    Rath J K, Schropp R E I 1998 Solar Energy Materials and Solar Cells 53 189

    [16]

    Shah A 2003 Thin Film Silicon Solar Cells (1st Edn.) (Switzerland: CRC Press) p311

    [17]

    Ballif C, Meillaud F, Feltrin A, Billet A 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p941

    [18]

    Kobayashi T, Kawagishi T, Fukumuro N 2011 26th European Photovoltaic Solar Energy Conference and Exhibition Hamburg, Germany, September 5-8, 2011 p984

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Publishing process
  • Received Date:  18 September 2012
  • Accepted Date:  31 October 2012
  • Published Online:  05 March 2013

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