Generation mechanism of two different over-saturation phenomena of photovoltaic HgCdTe detectors irradiated by CW band-in laser

Jiang Tian; Cheng Xiang-Ai; Xu Zhong-Jie; Lu Qi-Sheng

doi:10.7498/aps.62.097303

Abstract

We have studied two batches of photovoltaic HgCdTe detectors irradiated by CW band-in laser, and discovered, two different over-saturation phenomena. It is shown that the over-saturation phenomenon associated with the open-circle voltage signals which decreases with increasing light intensity is of universal existence in the PV HgCdTe detectors irradiated by intense light. The regular and special phenomena of PV HgCdTe detectors under intense light radiation are definite and obvious. The generation conditions for the two typical over-saturation phenomena are analyzed in terms of the equivalent circuit model. These two kinds of over-saturation phenomena have been numerically simulated. Numerical results are in good agreement with experimental data. It is found that the two generation mechanisms of the over-saturation phenomena of PV detector under irradiation of the above-band gap laser do exist. One is the increasing dark current due to thermal effectm, and the other is the leak current due to the bugs in the detector material.

Keywords:

Authors and contacts

1.
College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073, China;
2.
Science and Technology on Electro-Optical Information Security Control Laboratory, Sanhe 065201, China
Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 1030110), the Hunan Provincial Innovation Foundation for Postgraduate (Grant No. CX2011B035), and the NUDT Innovation Foundation for Postgraduate (Grant No. B110705).

References

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[4]	Jiang T, Cheng X A, Li L, Jiang H M, Lu Q S 2011 Optics and Spectroscopy 111 162
[5]	Wysoki B T, Marciniak M A 2008 Infrared Phys. Technol. 51 137
[6]	Jiang T, Cheng X A, Zheng X, Jiang H M, Lu Q S 2011 Semicond. Sci. Technol. 26 115004
[7]	Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta phys. Sin. 60 107305 (in Chinese) [江天, 程湘爱, 江厚满, 陆启生 2011 物理学报 60 107305]
[8]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 Semicond. Sci. Technol. 27 015020
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[11]	Wang R, Si L, Lu Q S 2003 Laser {& Infrared.} 33 335 (in Chinese) [王睿, 司磊, 陆启生 2003 激光与红外 33 335]
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[16]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 J. Infrared Millim. Waves 31 216 (in Chinese) [江天, 郑鑫, 程湘爱, 许中杰, 江厚满, 陆启生 2012 红外与毫米波学报 31 216]
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[18]	Sun C W, Lu Q S, Fan W X, Li W F, Guan J L, Guan C W 2002 Effect of laser irradiation (Beijing: Publishing House of national defence industry ) (in Chinese) p349 [孙承伟, 陆启生, 范正修, 李成福, 关吉利, 关崇文 2002 激光辐照效应 (北京: 国防工业出版社) 第349页]
[19]	Lu Q S, Jiang Z P, Liu Z J 1991 Semicond. Sci. Technol. 6 1039
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[21]	Chu J H 2005 Narrow-bandgap semiconductor physics (Beijing: Scientific Press) (in Chinese) p369 [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第369页]
[22]	Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press) p156 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第156页]

Cited By

[1]	Jiang T, Cheng X A, Zheng X, Xu Z J, Jiang H M, Lu Q S 2012 Acta Phys. Sin. 61 137302 (in Chinese) [江天, 程湘爱, 郑鑫, 江厚满, 陆启生 2012 物理学报 61 137302]
[2]	Zheng X, Jiang T, Cheng X A, Jiang H M, Lu Q S 2012 Acta phys. Sin. 61 047302 (in Chinese) [郑鑫, 江天, 程湘爱, 江厚满, 陆启生 2012 物理学报 61 047302]
[3]	Kuanr A V, Bansal S K, Srivatava G P 1996 Opt. and Laser Technol. 28 345
[4]	Jiang T, Cheng X A, Li L, Jiang H M, Lu Q S 2011 Optics and Spectroscopy 111 162
[5]	Wysoki B T, Marciniak M A 2008 Infrared Phys. Technol. 51 137
[6]	Jiang T, Cheng X A, Zheng X, Jiang H M, Lu Q S 2011 Semicond. Sci. Technol. 26 115004
[7]	Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta phys. Sin. 60 107305 (in Chinese) [江天, 程湘爱, 江厚满, 陆启生 2011 物理学报 60 107305]
[8]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 Semicond. Sci. Technol. 27 015020
[9]	Li X Q, Cheng X A, Wang R 2003 China J. Letter. 30 1070 (in Chinese) [李修乾, 程湘爱, 王睿 2003 中国激光 28 1070]
[10]	Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王睿 2003 强激光与粒子束 15 40]
[11]	Wang R, Si L, Lu Q S 2003 Laser {& Infrared.} 33 335 (in Chinese) [王睿, 司磊, 陆启生 2003 激光与红外 33 335]
[12]	Ma L Q, Lu Q S, Du S J 2004 China J. Letter. 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]
[13]	Ma L Q, Lu Q S, 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]
[14]	Li L, Lu Q S, Jiang H M, Cheng X A 2007 Acts. Opt. Sin. 27 85 (in Chinese) [李莉, 陆启生, 江厚满, 程湘爱 2007 光学学报 27 85]
[15]	Li L, Lu Q S 2008 Acts. Opt. Sin. 28 1953 (in Chinese) [李莉, 陆启生 2008 光学学报 28 1953]
[16]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 J. Infrared Millim. Waves 31 216 (in Chinese) [江天, 郑鑫, 程湘爱, 许中杰, 江厚满, 陆启生 2012 红外与毫米波学报 31 216]
[17]	He Y X, Jiang H M 201 0High Power Laser and Particle Beams 22 2829 (in Chinese) [贺元兴, 江厚满 2010 强激光与粒子束 22 2829]
[18]	Sun C W, Lu Q S, Fan W X, Li W F, Guan J L, Guan C W 2002 Effect of laser irradiation (Beijing: Publishing House of national defence industry ) (in Chinese) p349 [孙承伟, 陆启生, 范正修, 李成福, 关吉利, 关崇文 2002 激光辐照效应 (北京: 国防工业出版社) 第349页]
[19]	Lu Q S, Jiang Z P, Liu Z J 1991 Semicond. Sci. Technol. 6 1039
[20]	Liu E K, Zhu B S, Luo J S 2009 T. Semiconductor physics (Beijing: Publishing House of Electronics Industry) p245 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第245页]
[21]	Chu J H 2005 Narrow-bandgap semiconductor physics (Beijing: Scientific Press) (in Chinese) p369 [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第369页]
[22]	Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press) p156 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第156页]

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Vol. 62, Issue 9 - 2013-05-05

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