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Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors

Ren Jian Yan Da-Wei Gu Xiao-Feng

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Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors

Ren Jian, Yan Da-Wei, Gu Xiao-Feng
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  • Abstract views:  5994
  • PDF Downloads:  706
  • Cited By: 0
Publishing process
  • Received Date:  03 March 2013
  • Accepted Date:  31 March 2013
  • Published Online:  05 August 2013

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