Experimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets

Ma Ming-Lei; Wu Jian; Yang Mu; Ning Yong-Qiang; Shang Guang-Yi

doi:10.7498/aps.62.174209

Abstract

The information of optical gain of semiconductor lasers can be obtained through the amplified spontaneous emission from double facets. By utilizing this new approach, an experimental research about polarization (TE and TM) gain characteristics of continuously-operated 808 nm GaAs/AlGaAs quantum well laser is introduced in this paper. Through the measured gain spectra which are compared with the theoretical gain curves, we analyze the variations of hole subband corresponding to the polarizations along with the change of injection current, meanwhile the actual status of gain spectra and influential factors of the continuously-operated laser are discussed as well.

Keywords:

Authors and contacts

1.
Department of Applied Physics, Beihang University, Beijing 100191, China;
2.
State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 10974012).

References

[1]	Hakki B W, Paoli T L 1975 J. Appl. Phys. 46 1299
[2]	Hakki B W, Paoli T L 1974 J. Appl. Phys. 44 4113
[3]	Cassidy D T 1984 J. Appl. Phys. 56 3096
[4]	Henry C H, Logan R A, Merritt F R 1980 J. Appl. Phys. 56 3042
[5]	Oster A, Erbert G, Wenzel H 1997 Electronics Letters 33 No.10
[6]	Oster A, Bugge F, Erbert G, Wenzel H 1999 IEEE Journ Selected Topics in Quantum Electronics 5 631
[7]	Thomson J D, Summers H D, Hulyer P J, Smowton P M, Blood P 1999 Appl. Phys. Lett. 75 2527
[8]	Thomson J D, Summers H D, Hulyer P J, Smowton P M, Blood P 2000 Proceedings of SPIE 3944
[9]	Blood P, Lewis G M, Smowton P M, Summers H, Thomson J, Julie Lutti 2003 IEEE Journ Selected Topics in Quantum Electronics 9 1275
[10]	Lewis G M, Thomson J D, Smowton P M, Hulyer P J, Blood P 2002 Proceedings of SPIE. 4651
[11]	Lewis G M, Smowton P M, Blood P 2002 Appl. Phys. Lett. 80 3488
[12]	Mi Z, Fathpour S, Bhattacharya P 2005 Electronics Letters 41 23
[13]	Troger J 2003 Journ of Lightwave Technology 21 3441
[14]	Suchalkin S, Westerfeld D, Blenky G, Bruno J D, Pham J, Towner F, Tober R L 2008 IEEE Journ of Quantum Electronics 44 561
[15]	Coldren L A, Corzine S W 1995 Diode Lasers and Photonic Integratic Circuits (New York: Wiley)
[16]	Wu J, Summers H D 2010 Chinese Phys. B 19 1
[17]	Wu J, Xiao W, Lu Y M 2007 IET Optoelectronics 1 206
[18]	Summers H D, Wu J 2001 IEEE Proc. Optoelectronics 148 261

Cited By

[1]	Hakki B W, Paoli T L 1975 J. Appl. Phys. 46 1299
[2]	Hakki B W, Paoli T L 1974 J. Appl. Phys. 44 4113
[3]	Cassidy D T 1984 J. Appl. Phys. 56 3096
[4]	Henry C H, Logan R A, Merritt F R 1980 J. Appl. Phys. 56 3042
[5]	Oster A, Erbert G, Wenzel H 1997 Electronics Letters 33 No.10
[6]	Oster A, Bugge F, Erbert G, Wenzel H 1999 IEEE Journ Selected Topics in Quantum Electronics 5 631
[7]	Thomson J D, Summers H D, Hulyer P J, Smowton P M, Blood P 1999 Appl. Phys. Lett. 75 2527
[8]	Thomson J D, Summers H D, Hulyer P J, Smowton P M, Blood P 2000 Proceedings of SPIE 3944
[9]	Blood P, Lewis G M, Smowton P M, Summers H, Thomson J, Julie Lutti 2003 IEEE Journ Selected Topics in Quantum Electronics 9 1275
[10]	Lewis G M, Thomson J D, Smowton P M, Hulyer P J, Blood P 2002 Proceedings of SPIE. 4651
[11]	Lewis G M, Smowton P M, Blood P 2002 Appl. Phys. Lett. 80 3488
[12]	Mi Z, Fathpour S, Bhattacharya P 2005 Electronics Letters 41 23
[13]	Troger J 2003 Journ of Lightwave Technology 21 3441
[14]	Suchalkin S, Westerfeld D, Blenky G, Bruno J D, Pham J, Towner F, Tober R L 2008 IEEE Journ of Quantum Electronics 44 561
[15]	Coldren L A, Corzine S W 1995 Diode Lasers and Photonic Integratic Circuits (New York: Wiley)
[16]	Wu J, Summers H D 2010 Chinese Phys. B 19 1
[17]	Wu J, Xiao W, Lu Y M 2007 IET Optoelectronics 1 206
[18]	Summers H D, Wu J 2001 IEEE Proc. Optoelectronics 148 261

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