Influence of ZnS modification on the I-V performance of ZnO nanorods：P3HT composite films

Wang Li-Shi; Xu Jian-Ping; Shi Shao-Bo; Zhang Xiao-Song; Ren Zhi-Rui; Ge Lin; Li Lan

doi:10.7498/aps.62.196103

Abstract

In this paper, the ZnO nanorod arrays (NRAs) with a diameter of 50nm and a length of 250 nm were synthesized by chemical bath deposition method. Two devices with structures of ITO (indium tin oxides)/ZnO/poly-(3-hexylthiophene) (P3HT)/Au and ITO/ZnO@ZnS/P3HT/Au were fabricated and their performances were tested and evaluated separately. The I-V curves were measured for discussion of the threshold voltage, series resistance, reverse leakage current, and rectification ratio. Results show that the device with modified ZnO shows a decline in the threshold voltage, series resistance and reverse leakage current, but has an enhanced rectification ratio. The effect of ZnS coating on the improvement of conductive properties of the device could be attributed to the suppression of the non-radiative recombination of surface defects as shown by means of photoluminescence spectrum.

Keywords:

Authors and contacts

1.
College of Electronic and Information Engineering, Tianjin University of technology, Tianjin 300384, China;
2.
Institute of Materials Physics, Tianjin University of technology, Tianjin 300384, China;
3.
College of Science, Tianjin University of Technology and Education, Tianjin 300222, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60977035, 10904109, 60907021), and the Natural Science Foundation of Tianjin, China (Grant No. 11JCYBJC00300).

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Cited By

[1]	Nguyen X S, Tay C B, Fitzgerald E A, Chua S J 2012 Small 8 1204
[2]	Huang J Z, Li S S, Feng X P 2010 Acta Phys. Sin. 59 5839 (in Chinese) [黄金昭, 李世帅, 冯秀鹏 2010 物理学报 59 5839]
[3]	Bahadur L, Kushwaha S 2012 Appl. Phys. A 109 655
[4]	Yan Y, Zhao S L, Xu Z, Gong W, Wang D W 2011 Acta Phys. Sin. 60 088803 (in Chinese) [闫悦, 赵谡玲, 徐征, 龚伟, 王大伟 2011 物理学报 60 088803]
[5]	Lee C Y, Wang J Y, Chou Y, Cheng C L, Chao C H, Shiu S C, Hung S C, Chao J J, Liu M Y, Su W F, Chen Y F, Lin C F 2009 Nanotechnology 20 425202
[6]	Kathalingam A, Rhee J K 2012 Electron. Mater. 41 2162
[7]	Bi D, Wu F, Yue W, Guo Y, Shen W, Peng R, Wu H, Wang X, Wang M. 2010 Phys. Chem. C 114 13846
[8]	Shi L, Xu Y, Hark S, Liu Y, Wang S, Peng L, Wong K, Li Q 2007 Nano Lett. 7 3559
[9]	He J H, Ke J J, Chang P H, Tsai K T, Yang P C, Chan I M 2012 Nanoscale 4 3399
[10]	Wang R C, Lin H Y 2009 Appl. Phys. A 95 813
[11]	Panigrahi S, Basak D 2011 Chem. Phys. Lett. 511 91
[12]	Law M, Greene L E, Radenovic A, Kuykendall T, Liphardt J, Yang P 2006 Phys. Chem. B 110 22652
[13]	Lu M Y, Song J, Lu M P, Lee C Y, Chen L J, Wang Z L 2009 Acs Nano 3 357
[14]	Wang K, Chen J J, Zeng Z M, Tarr J, Zhou W L, Zhang Y, Yan Y F, Jiang C S, Pern J, Mascarenhas A 2010 Appl. Phys. Lett. 96 123105
[15]	Bera A, Basak D 2010 Appl. Mater. & Inter. 2 408
[16]	Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红 2009 物理学报 58 8566]
[17]	Pingel P, Zen A, Abellón R D, Grozema F C, Siebbeles L D A, Neher D 2010 Adv. Funct. Mater. 20 2286
[18]	Briseno A L, Holcombe T W, Boukai A I, Garnett E C, Shelton S W, Fréchet J J, Yang P D 2009 Nano Lett. 10 334
[19]	McCullough R D, Ewbank P C 1998 Handbook of conducting polymers (New York: CRC PressI Llc) p225
[20]	Yin L Q, Peng J B 2009 Acta Phys. Sin. 58 3456 (in Chinese) [尹丽琴, 彭俊彪 2009 物理学报 58 3456]
[21]	Peterson R B, Field C L, Gregg B A 2004 Langmuir 20 5114
[22]	Nam W H, Lim Y S, Seo W S, Cho H K, Lee J Y 2011 Nano. Res. 13 5825
[23]	Schroder D K 2005 Semiconductor material and device characterization (Hoboken: A Wiley-Interscience Publication) 779
[24]	Lima S A M, Sigoli F A, Jafelicci M J, Davolos M R 2001 Int. J. Inorg. Mater. 3 749
[25]	Djurišić A B, Choy W C H, Roy V A L, Leung Y H, Kwong C Y, Cheah K W, Gundu R T K, Chan W K, Lui H F, Surya C 2004 Adv. Funct. Mater. 14 856
[26]	Tam K H, Cheung C K, Leung Y H, Djurišić A B, Ling C C, Beling C D, Fung S, Kwok W M, Chan W K, Phillips D L, Ding L, Ge W K 2006 Phys. Chem. B 110 20865
[27]	Reddy N K, Ahsanulhaq Q, Kim J H, Hahn Y B 2008 Appl. Phys. Lett. 92 043127
[28]	Matsushima T, Murata H 2009 Appl. Phys. Lett. 95 203306

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Vol. 62, Issue 19 - 2013-10-05

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