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The resistance relaxation in Au/SrTiO3/Au sandwiches with bipolar resistance switching has been investigated by the low frequency analysis. The power spectral density of the conducting current fluctuation in the high resistance state and the low resistance state shows 1/f behaviors. By contrast experiment, the low frequency noise for the high resistance state is ascribed to the Schottky barrier under reverse bias and the oxygen vacancy diffusion, while the noise in the low resistance state is due to the carriers fluctuation arising from the oxygen vacancy migration. The resistance relaxation can be further understood as the diffusion of oxygen vacancies under an electric field.
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Keywords:
- resistive switching /
- low frequency noise /
- oxygen vacancies
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[4] Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M, Williams R S 2010 Adv. Mater. 22 3573
[5] Miao F, Yang J J, Borghetti J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254007
[6] Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003
[7] Strachan J P, Strukov D B, Borghetti J, Yang J J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254015
[8] Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001
[9] Kim K M, Jeong D S, Huang C S 2011 Nanotechnology 22 254002
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[11] Li S L, Liao Z L, Li J, Gang J L, Zheng D N 2009 Journal of Physics D: Applied Physics 42 045411
[12] Sasaki M, 2012 J. Appl. Phys. 112 014501
[13] Nian Y B, Strozier J, Wu N J, Chen X, Ignatiev A 2007 Phys. Rev. Lett. 98 146403
[14] Schulman A, Rozenberg M J, Acha C 2012 Phys. Rev. B 86 104426
[15] Ielmini D, Nardi F, Cagli C 2010 Appl. Phys. Lett. 96 053503
[16] Lee J K, Lee J W, Park J, Chung S W, Roh J S, Hong S J, Cho I W, Kwon H I, Lee J H 2011 Appl. Phys. Lett. 98 143502
[17] Lee S B, Park S, Lee J S, Chae S C, Chang S H, Jung M H, Jo Y, Kahng B, Kang B S, Lee M J, Noh T W 2009 Appl. Phys. Lett. 95 122112
[18] Maccaronio V, Crupi F, Procel L M, Goux L, Simoen E, Trojman L, Miranda E 2013 Microelectronic Engineering 107 1
[19] Zhang P J, Meng Y, Liu Z Y, Li D, Su T, Meng Q Y, Mao Q, Pan X Y, Chen D M, Zhao H W 2012 J. Appl. Phys. 111 063702
[20] Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106
[21] Weissman M B 1988 Reviews of Moden Physics 60 537
[22] Lee M S, Lee J K, Hwang H S, Shin H C, Park B G, Park Y J, Lee J H 2011 Japanese Journal of Applied Physics 50 011501
[23] Park C H, Lee J H 2012 Solid-State Electronics 69 85
[24] Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mater. 19 2232
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[1] Waser R, Aono M 2007 Nature materials 6 833
[2] Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R, Williams R S 2008 Nanotechnology 3 429
[3] Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[4] Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M, Williams R S 2010 Adv. Mater. 22 3573
[5] Miao F, Yang J J, Borghetti J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254007
[6] Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003
[7] Strachan J P, Strukov D B, Borghetti J, Yang J J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254015
[8] Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001
[9] Kim K M, Jeong D S, Huang C S 2011 Nanotechnology 22 254002
[10] Pennetta C, Trefan T, Reggiani L 2000 Phys. Rev. Lett. 85 5238
[11] Li S L, Liao Z L, Li J, Gang J L, Zheng D N 2009 Journal of Physics D: Applied Physics 42 045411
[12] Sasaki M, 2012 J. Appl. Phys. 112 014501
[13] Nian Y B, Strozier J, Wu N J, Chen X, Ignatiev A 2007 Phys. Rev. Lett. 98 146403
[14] Schulman A, Rozenberg M J, Acha C 2012 Phys. Rev. B 86 104426
[15] Ielmini D, Nardi F, Cagli C 2010 Appl. Phys. Lett. 96 053503
[16] Lee J K, Lee J W, Park J, Chung S W, Roh J S, Hong S J, Cho I W, Kwon H I, Lee J H 2011 Appl. Phys. Lett. 98 143502
[17] Lee S B, Park S, Lee J S, Chae S C, Chang S H, Jung M H, Jo Y, Kahng B, Kang B S, Lee M J, Noh T W 2009 Appl. Phys. Lett. 95 122112
[18] Maccaronio V, Crupi F, Procel L M, Goux L, Simoen E, Trojman L, Miranda E 2013 Microelectronic Engineering 107 1
[19] Zhang P J, Meng Y, Liu Z Y, Li D, Su T, Meng Q Y, Mao Q, Pan X Y, Chen D M, Zhao H W 2012 J. Appl. Phys. 111 063702
[20] Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106
[21] Weissman M B 1988 Reviews of Moden Physics 60 537
[22] Lee M S, Lee J K, Hwang H S, Shin H C, Park B G, Park Y J, Lee J H 2011 Japanese Journal of Applied Physics 50 011501
[23] Park C H, Lee J H 2012 Solid-State Electronics 69 85
[24] Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mater. 19 2232
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