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In order to study the mechanism of the profile evolution process, a three-dimensional (3D) profile evolution method based on compression representation is proposed to simulate the plasma etching process and consider emphatically ion etching. To solve the problem of large memory requirements of 3D cellular model, the presented method adopts a new data structure, which combines two-dimensional array with dynamic storage, to represent cellular information. The structure realizes the lossless compression of cellular information and keeps the spatial correlation between 3D cells. The experimental results show that the method not only significantly reduces the memory, but also has a higher searching efficiency of surface cell which ion first passes through in high-resolution simulation. The method is applied to 3D profile evolution simulation of silicon etching process. A comparison between the simulation results and the experimental results also verifies the effectiveness of the proposed method.
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Keywords:
- plasma etching /
- cellular automata /
- profile evolution algorithm /
- high-resolution simulation
[1] Chang J P, Mahorowala A P, Sawin H H 1998 J. Vac. Sci. Technol. A 16 217
[2] Chang J P, Sawin H H 1997 J. Vac. Sci. Technol. A 15 610
[3] Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 (in Chinese) [戴忠玲, 毛明, 王友年 2006 物理 35 693]
[4] Saussac J, Margot J, Chaker M 2009 J. Vac. Sci. Technol. A 27 130
[5] Levinson J A, Shaqfeh E S G, Balooch M, Hamza A V 2000 J. Vac. Sci. Technol. B 18 172
[6] Kokkoris G, Tserepi A, Boudouvis A G, Gogolides E 2004 J. Vac. Sci. Technol. A 22 1896
[7] Shimada T, Yagisawa T, Makabe T 2006 Jpn. J. App. Phys. 45 132
[8] Ertl O, Selberherr S 2010 Microelectron. Eng. 87 20
[9] Hoang J, Hsu C, Chang J P 2008 J. Vac. Sci. Technol. B 26 1911
[10] Kawai H 2008 Ph. D. Dissertation. (Cambridge: Massachusetts Institute of Technology)
[11] Zheng S L, Song Y X, Sun X M 2013 Acta Phys. Sin. 62 108201 (in Chinese) [郑树琳, 宋亦旭, 孙晓民 2013 物理学报 62 108201]
[12] Li Q, Li D Z, Qian B N 2004 Acta Phys. Sin. 53 3477 (in Chinese) [李强, 李殿中, 钱百年 2004 物理学报 53 3477]
[13] Shan B W, Lin X, Wei L, Huang W D 2009 Acta Phys. Sin. 58 1132 (in Chinese) [单博炜, 林鑫, 魏雷, 黄卫东 2009 物理学报 58 1132]
[14] Shi Y F, Xu Q Y, Liu B C 2012 Acta Phys. Sin. 61 108101 (in Chinese) [石玉峰, 许庆彦, 柳百成 2012 物理学报 61 108101]
[15] Bentaleb K, Jetto K, Ez-Zahraouy H, Benyoussef A 2013 Chin. Phys. B 22 018902
[16] Yue H, Shao C F, Chen X M, Hao H R 2008 Acta Phys. Sin. 57 6901 (in Chinese) [岳昊, 邵春福, 陈晓明, 郝合瑞 2008 物理学报 57 6901]
[17] Zhao H T, Mao H Y 2013 Acta Phys. Sin. 62 060501 (in Chinese) [赵韩涛, 毛宏燕 2013 物理学报 62 060501]
[18] Ren G, Lu L L, Wang W 2012 Acta Phys. Sin. 61 144501 (in Chinese) [任刚, 陆丽丽, 王炜 2012 物理学报 61 144501]
[19] Jin Z, Liu Q X, Mainul H 2007 Chin. Phys. 16 1267
[20] Jin Z, Liu Q X 2006 Chin. Phys. 15 1248
[21] Song Y R, Jiang G P, Xu J G 2011 Acta Phys. Sin. 60 120509 (in Chinese) [宋玉蓉, 蒋国平, 徐加刚 2011 物理学报 60 120509]
[22] Wang Y Q, Jiang G P 2011 Acta Phys. Sin. 60 080510 (in Chinese) [王亚奇, 蒋国平 2011 物理学报 60 080510]
[23] Ono K, Ohta H, Eriguchi K 2010 Thin Solid Films 518 3461
[24] Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A 2012 Comp. Mater. Sci. 54 227
[25] Du L Q, Li P, Liu J S 2008 Chin. J. Comput. 31 868 (in Chinese) [杜立群, 李璞, 刘军山 2008 计算机学报 31 868]
[26] Zhou Z F, Huang Q A, Li W H, Lu W 2007 IEEE Trans. Comput. Aided Design Integr. Circuits Sys. 26 100
[27] Chang J P, Arnold J C, Zau G C H, Shin H, Sawin H H 1997 J. Vac. Sci. Technol. A 15 1853
[28] Fujimoto A, Tanaka T, Iwata K 1986 IEEE Comput. Graph. Appl. 6 16
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[1] Chang J P, Mahorowala A P, Sawin H H 1998 J. Vac. Sci. Technol. A 16 217
[2] Chang J P, Sawin H H 1997 J. Vac. Sci. Technol. A 15 610
[3] Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 (in Chinese) [戴忠玲, 毛明, 王友年 2006 物理 35 693]
[4] Saussac J, Margot J, Chaker M 2009 J. Vac. Sci. Technol. A 27 130
[5] Levinson J A, Shaqfeh E S G, Balooch M, Hamza A V 2000 J. Vac. Sci. Technol. B 18 172
[6] Kokkoris G, Tserepi A, Boudouvis A G, Gogolides E 2004 J. Vac. Sci. Technol. A 22 1896
[7] Shimada T, Yagisawa T, Makabe T 2006 Jpn. J. App. Phys. 45 132
[8] Ertl O, Selberherr S 2010 Microelectron. Eng. 87 20
[9] Hoang J, Hsu C, Chang J P 2008 J. Vac. Sci. Technol. B 26 1911
[10] Kawai H 2008 Ph. D. Dissertation. (Cambridge: Massachusetts Institute of Technology)
[11] Zheng S L, Song Y X, Sun X M 2013 Acta Phys. Sin. 62 108201 (in Chinese) [郑树琳, 宋亦旭, 孙晓民 2013 物理学报 62 108201]
[12] Li Q, Li D Z, Qian B N 2004 Acta Phys. Sin. 53 3477 (in Chinese) [李强, 李殿中, 钱百年 2004 物理学报 53 3477]
[13] Shan B W, Lin X, Wei L, Huang W D 2009 Acta Phys. Sin. 58 1132 (in Chinese) [单博炜, 林鑫, 魏雷, 黄卫东 2009 物理学报 58 1132]
[14] Shi Y F, Xu Q Y, Liu B C 2012 Acta Phys. Sin. 61 108101 (in Chinese) [石玉峰, 许庆彦, 柳百成 2012 物理学报 61 108101]
[15] Bentaleb K, Jetto K, Ez-Zahraouy H, Benyoussef A 2013 Chin. Phys. B 22 018902
[16] Yue H, Shao C F, Chen X M, Hao H R 2008 Acta Phys. Sin. 57 6901 (in Chinese) [岳昊, 邵春福, 陈晓明, 郝合瑞 2008 物理学报 57 6901]
[17] Zhao H T, Mao H Y 2013 Acta Phys. Sin. 62 060501 (in Chinese) [赵韩涛, 毛宏燕 2013 物理学报 62 060501]
[18] Ren G, Lu L L, Wang W 2012 Acta Phys. Sin. 61 144501 (in Chinese) [任刚, 陆丽丽, 王炜 2012 物理学报 61 144501]
[19] Jin Z, Liu Q X, Mainul H 2007 Chin. Phys. 16 1267
[20] Jin Z, Liu Q X 2006 Chin. Phys. 15 1248
[21] Song Y R, Jiang G P, Xu J G 2011 Acta Phys. Sin. 60 120509 (in Chinese) [宋玉蓉, 蒋国平, 徐加刚 2011 物理学报 60 120509]
[22] Wang Y Q, Jiang G P 2011 Acta Phys. Sin. 60 080510 (in Chinese) [王亚奇, 蒋国平 2011 物理学报 60 080510]
[23] Ono K, Ohta H, Eriguchi K 2010 Thin Solid Films 518 3461
[24] Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A 2012 Comp. Mater. Sci. 54 227
[25] Du L Q, Li P, Liu J S 2008 Chin. J. Comput. 31 868 (in Chinese) [杜立群, 李璞, 刘军山 2008 计算机学报 31 868]
[26] Zhou Z F, Huang Q A, Li W H, Lu W 2007 IEEE Trans. Comput. Aided Design Integr. Circuits Sys. 26 100
[27] Chang J P, Arnold J C, Zau G C H, Shin H, Sawin H H 1997 J. Vac. Sci. Technol. A 15 1853
[28] Fujimoto A, Tanaka T, Iwata K 1986 IEEE Comput. Graph. Appl. 6 16
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