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Fe80Ni20 thin films with different thickness values are prepared by the molecular beam vapor deposition technique, respectively, in the cases with applying no magnetic field and with applying a 6 T magnetic field perpendicular to the surface of substrates. Film property studies show that as film thickness value increases, the coercive force in-plane decreases, which is in accordance with Neel theory, and that the squareness ratio first quickly increases, and then slowly decreases. The 6 T magnetic field restrains coalescence and abnormal growth of grains, and reduces surface roughness. Therefore, with 6 T magnetic field applied during the film preparation, the coercive force of thin film is less and the squareness ratio is larger than that with no magnetic field applied. The thin films are anisotropic in-plane with applying no magnetic field, but isotropic with applying a 6 T magnetic field.
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Keywords:
- high magnetic field /
- vapor deposition /
- microstructure /
- magnetic properties
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[2] Romera M, Ranchal R, Ciudad D, Maicas M, Aroca C 2011 J. Appl. Phys. 110 083910
[3] Szmaja W, Balcerski J, Koztowski W, Cichomski M, Grobelny J, Smolny M, Kowalczyk P J 2012 J. Alloys Compd. 521 174
[4] Anjum S, Rafique M S, Khaleeq-ur-Rahaman M, Siraj K, Usman A, Ahsan A, Naseem S, Khan K 2011 J. Cryst. Growth 324 142
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[7] Nilsen O, Lie M, Foss S, Fjellvag H, Kjekshus A 2004 Appl. Surf. Sci. 227 40
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[15] Garmestani H, Al-Haik M S, Dahmen K, Tannenbaum R, Li D S, Sablin S S, Hussaini M Y 2003 Adv. Mater. 15 1918
[16] Sheikh-Ali A D, Molodov D A, Garmestani H 2003 Appl. Phys. Lett. 82 3005
[17] Li X, Fautrelle Y, Ren Z M 2007 Acta Mater. 55 1377
[18] Ando T, Hirota N, Wada H 2009 Sci. Technol. Adv. Mater. 10 014609
[19] Wang Q, Liu Y, Liu T, Gao P F, Wang K 2012 Appl. Phys. Lett. 101 132406
[20] Wang Q, Lou C S, Liu T, Wei N, Wang C J, He J C 2009 J. Phys. D: Appl. Phys. 42 025001
[21] Zhao A K, Ren Z M, Ren S Y, Cao G H, Ren W L 2009 Acta Phys. Sin. 58 7101 (in Chinese) [赵安昆, 任忠鸣, 任树洋, 操光辉, 任维丽 2009 物理学报 58 7101]
[22] Wang Q, Cao Y Z, Li G J, Wang K, Du J J, He J C 2013 Sci. Adv. Mater. 5 447
[23] Cao Y Z, Wang Q, Li G J, Du J J, Wu C, He J C 2013 J. Magn. Magn. Mater. 332 38
[24] Neel L 1956 J. Phys. Radium 17 250
[25] Qin X Y, Lee J S, Kim J G 1999 J. Appl. Phys. 86 2146
[26] Tabakovic I, Inturi V, Riemer S 2002 J. Electrochem. Soc. 149 C18
[27] Tabakovic I, Riemer S, Vas’ko V, Sapozhnikov V, Kief M 2003 J. Electrochem. Soc. 150 C635
[28] Lloyd J C, Smith R S 1959 J. Appl. Phys. 30 274S
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[1] Loloee R, Crimp M A 2002 J. Appl. Phys. 92 4541
[2] Romera M, Ranchal R, Ciudad D, Maicas M, Aroca C 2011 J. Appl. Phys. 110 083910
[3] Szmaja W, Balcerski J, Koztowski W, Cichomski M, Grobelny J, Smolny M, Kowalczyk P J 2012 J. Alloys Compd. 521 174
[4] Anjum S, Rafique M S, Khaleeq-ur-Rahaman M, Siraj K, Usman A, Ahsan A, Naseem S, Khan K 2011 J. Cryst. Growth 324 142
[5] Matsushima H, Nohira T, Ito Y 2004 Electrochem. Solid-State Lett. 7 C81
[6] Koza J A, Karnbach F, Uhlemann M, McCord J, Mickel C, Gebert A, Baunack S, Schultz L 2010 Electrochim. Acta 55 819
[7] Nilsen O, Lie M, Foss S, Fjellvag H, Kjekshus A 2004 Appl. Surf. Sci. 227 40
[8] Wang H Y, Mitani S, Motokawa M, Fujimori H 2003 J. Appl. Phys. 93 9145
[9] Zhang L R, Lu H, Liu X, Bai J M, Wei F L 2012 Chin. Phys. B 21 037502
[10] Cao X W 1996 Physics 25 552 (in Chinese) [曹效文 1996 物理 25 552]
[11] Zhang Y H 2009 Physics 38 320 (in Chinese) [张裕恒 2009 物理 38 320]
[12] Wang C J, Wang Q, Wang Y Q, Huang J, He J C 2006 Acta Phys. Sin. 55 648 (in Chinese) [王春江, 王强, 王亚勤, 黄剑, 赫冀成 2006 物理学报 55 648]
[13] Hu F X, Shen B G, Sun J R 2013 Chin. Phys. B 22 037505
[14] Sung M G, Sassa K, Tagawa T, Miyata T, Ogawa H, Doyama M, Yamada S, Asai S 2002 Carbon 40 2013
[15] Garmestani H, Al-Haik M S, Dahmen K, Tannenbaum R, Li D S, Sablin S S, Hussaini M Y 2003 Adv. Mater. 15 1918
[16] Sheikh-Ali A D, Molodov D A, Garmestani H 2003 Appl. Phys. Lett. 82 3005
[17] Li X, Fautrelle Y, Ren Z M 2007 Acta Mater. 55 1377
[18] Ando T, Hirota N, Wada H 2009 Sci. Technol. Adv. Mater. 10 014609
[19] Wang Q, Liu Y, Liu T, Gao P F, Wang K 2012 Appl. Phys. Lett. 101 132406
[20] Wang Q, Lou C S, Liu T, Wei N, Wang C J, He J C 2009 J. Phys. D: Appl. Phys. 42 025001
[21] Zhao A K, Ren Z M, Ren S Y, Cao G H, Ren W L 2009 Acta Phys. Sin. 58 7101 (in Chinese) [赵安昆, 任忠鸣, 任树洋, 操光辉, 任维丽 2009 物理学报 58 7101]
[22] Wang Q, Cao Y Z, Li G J, Wang K, Du J J, He J C 2013 Sci. Adv. Mater. 5 447
[23] Cao Y Z, Wang Q, Li G J, Du J J, Wu C, He J C 2013 J. Magn. Magn. Mater. 332 38
[24] Neel L 1956 J. Phys. Radium 17 250
[25] Qin X Y, Lee J S, Kim J G 1999 J. Appl. Phys. 86 2146
[26] Tabakovic I, Inturi V, Riemer S 2002 J. Electrochem. Soc. 149 C18
[27] Tabakovic I, Riemer S, Vas’ko V, Sapozhnikov V, Kief M 2003 J. Electrochem. Soc. 150 C635
[28] Lloyd J C, Smith R S 1959 J. Appl. Phys. 30 274S
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