Study of boron-doped zinc oxide film serving as front contact with high haze used in amorphous silicon thin film solar cells

Wang Li; Zhang Xiao-Dan; Yang Xu; Wei Chang-Chun; Zhang De-Kun; Wang Guang-Cai; Sun Jian; Zhao Ying

doi:10.7498/aps.63.028801

Abstract

Boron-doped zinc oxide (BZO) deposited by metal organic chemical vapor deposition (MOCVD) method is used as front contact in amorphous silicon thin film solar cells. Asahi-U type SnO2:F is used as the reference front contact for comparison. When the a-Si:H intrinsic layer thickness is changing changed, the performance of a-Si:H solar cells shows different evolution trends. These different results can be understood from the shadowing effect during the growth of intrinsic silicon material, which is caused by the as-grown pyramid texture in the surface of BZO substrate. In order to reduce this negative effect on the performance of solar cells, the deposition temperature of the a-Si:H intrinsic layer is optimized, to thereby improving improve the open circuit voltage and fill factor. The conversion efficiency of a-Si:H solar cells can reach up to 7.34%, with the thickness of absorber layer being only around 200 nm. and only Al back reflector is being used.

Keywords:

Authors and contacts

1.
Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706, 2011CBA00707), the National Natural Science Foundation of China (Grant No. 60976051), the National High Technology and Development Research Program of China (Grant No. 2013AA050302), the Science and Technology Support Program of Tianjin, China (Grant No. 12ZCZDGX03600), the Major Science and Technology Support Project of Tianjin City, China (Grant No. 11TXSYGX22100), and Specialized Research Fund for the Ph.D. Program of Higher Education of China (Grant No. 20120031110039).

References

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Cited By

[1]	Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801
[2]	Wang L, Zhang X D, Yang X, Wei C C, Zhang D K, Wang G C, Sun J, Zhao Y 2013 Acta Phys. Sin. 62 058801 (in Chinese) [王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2013 物理学报 62 058801]
[3]	Ni J, Zheng J J, Cao Y, Wang X B, Li C, Chen X L, Geng X H, Zhao Y 2011 Chin. Phys. B 20 087309
[4]	Boccard M, Cuony P, Battaglia C, Despeisse M, Ballif C 2010 Phys. Status Solidi RRL 4 326
[5]	Sai H, Jia H, Kondo M 2010 J. Appl. Phys. 108 044505
[6]	Selvan J A, Delahoy A E, Guo S, Li Y M 2006 Sol. Energy Mater. Sol. Cells 90 3371
[7]	Wanka H N, Schubert M B, Lotter E 1996 Sol. Energy Mater. Sol. Cells 41 519
[8]	Chen X L, Xue J M, Zhang D K, Sun J, Ren H Z, Zhao Y, Geng X H 2007 Acta Phys. Sin. 56 1563 (in Chinese) [陈新亮, 薛俊明, 张德坤, 孙建, 任慧志, 赵颖, 耿新华 2007 物理学报 56 1563]
[9]	Faÿ S, Kroll U, Bucher C, Vallat-Sauvain E, Shah A 2005 Sol. Energy Mater. Sol. Cells 86 385
[10]	Dominé D, Buehlmann P, Bailat J, Billket A, Feltrin A, Ballif C 2008 Phys. Status Solidi RRL 2 163
[11]	Böhmer E, Siebke F, Wagner H 1997 Fresenius J. Anal. Chem. 358 210
[12]	Grunze M, Hirschwald W, Hofmann D 1981 J. Cryst. Growth 52 241
[13]	Burstein E 1954 Phys. Rev. 93 632
[14]	Li H, Franken R H, Rath J K, Schropp R E I 2009 Sol. Energy Mater. Sol. Cells 93 338
[15]	Boccard M, Söderström T, Cuony P, Battaglia C, Hänni, Nicolay S, Ding L, Benkhaira M, Bugnon G, Billet A, Ballif C 2012 IEEE J. Photovoltaics DOI:10.1109/JPHOTOV.2011.2180514
[16]	Bailat J, Dominé D, Schlchter R, Steinhauser J, Faÿ S, Freitas F, Bcher C, Feitknecht L, Niquille X, Tscharner T, Shah A, Ballif C 2006 Proceedings of the 4th WCPEC Conference Hawai, USA, May 7–12, 2006 p1533
[17]	Faÿ S, Kroll U, Bucher C, Vallat-Sauvain E, Shah A 2005 Sol. Energy Mater. Sol. Cells 86 385
[18]	Platz R, Hof C, Fischer D, Meier J, Shah A 1998 Sol. Energy Mater. Sol. Cells 53 1

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Vol. 63, Issue 2 - 2014-01-20

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