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In order to study the total dose effect and hardness assurance technology for the bipolar devices, we have designed and fabricated different gate-controlled lateral PNP bipolar transistors by various technologies, and preformed 60Co-γ low-dose rate irradiation. The test results show that: 1) Irradiation characteristics of the gate-controlled bipolar transistor are strongly dependent on the fabrication technology, and the passivation layer has a great influence on the irradiation response of the device. The device with a passivation layer will have more interface traps in ionizing radiation environments, and its resistance to ionizing irradiation is greatly weakened. 2) A domestic gated-controlled lateral PNP transistor exhibited a peak current broadening effect at low-dose rate irradiation. In this paper, we analyze the mechanism of the broadening effect, and put forward a new separation method for reducing the base current broadening effect, which not only provides the basis for the design of hardened devices, but also a powerful tool for the study of the enhanced low-dose rate sensitivity of the bipolar device.
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Keywords:
- GCLPNP BJTs /
- 60Coγ irradiation /
- ionizing damage
[1] Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[2] Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[3] Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 088501 (in Chinese)[翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 60 088501]
[4] He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese)[何宝平, 姚志斌 2010 物理学报 59 1985]
[5] Lu W, Ren D Y, Guo Q, Yu X F, He C F, Zhen Y Z, Wang Y Y 2009 Acta Phys. Sin. 58 5572 (in Chinese)[陆妩, 任迪远, 郭旗, 余学锋, 何承发, 郑玉展, 王义元 2009 物理学报 58 5572]
[6] Wang Y Y, Lu Wu, Ren D Y, Guo Q, Yu X F, Ren D Y, He C F, G B 2011 Acta Phys. Sin. 60 096104 (in Chinese)[王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 物理学报 60 096104]
[7] Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706
[8] Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese)[李瑞珉, 杜磊, 庄奕琪, 包军林 2007 物理学报 56 3400]
[9] Xi S B, Lu W, Wang Z K, Ren D Y, Zhou D, Wen L, Sun J 2012 Acta Phys. Sin. 61 236103 (in Chinese)[席善斌, 陆妩, 王志宽, 任迪远, 周东, 文林, 孙静 2012 物理学报 61 236103]
[10] Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2012 Acta Phys. Sin. 61 236103 (in Chinese)[席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103])
[11] McWhorter P J, Winokur P S 1986 Appl Phys. Lett. 48 133
[12] Pease R, Emily D, H E Boesch 1985 IEEE Trans. Nucl. Sci. 32 3946
[13] Chen X J, Barnaby H J, Pease R L, Schrimpf R D, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3178
[14] Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185
[15] Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894
[16] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[17] Minson E, Sanchez I, Barnaby H J, Pease R L, Platteter D G, Dun-ham G 2004 IEEE Trans. Nucl. Sci. 51 3723
[18] Chen X J, Barnaby H J, Pease R L, Schrimpf R D, Platteter D, Shaneyfelt M, Vermeire B 2005 IEEE Trans. Nucl. Sci. 52 2245
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[1] Enlow E W, Pease R L, Combs W, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[2] Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A, DeLaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[3] Zhai Y H, Li P, Zhang G J, Luo Y X, Fan X, Hu B, Li J H, Zhang J, Su P 2011 Acta Phys. Sin. 60 088501 (in Chinese)[翟亚红, 李平, 张国俊, 罗玉香, 范雪, 胡滨, 李俊宏, 张健, 束平 2011 物理学报 60 088501]
[4] He B P, Yao Z B 2010 Acta Phys. Sin. 59 1985 (in Chinese)[何宝平, 姚志斌 2010 物理学报 59 1985]
[5] Lu W, Ren D Y, Guo Q, Yu X F, He C F, Zhen Y Z, Wang Y Y 2009 Acta Phys. Sin. 58 5572 (in Chinese)[陆妩, 任迪远, 郭旗, 余学锋, 何承发, 郑玉展, 王义元 2009 物理学报 58 5572]
[6] Wang Y Y, Lu Wu, Ren D Y, Guo Q, Yu X F, Ren D Y, He C F, G B 2011 Acta Phys. Sin. 60 096104 (in Chinese)[王义元, 陆妩, 任迪远, 郭旗, 余学峰, 何承发, 高博 2011 物理学报 60 096104]
[7] Fleetwood D M 2013 IEEE Trans. Nucl. Sci. 60 1706
[8] Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese)[李瑞珉, 杜磊, 庄奕琪, 包军林 2007 物理学报 56 3400]
[9] Xi S B, Lu W, Wang Z K, Ren D Y, Zhou D, Wen L, Sun J 2012 Acta Phys. Sin. 61 236103 (in Chinese)[席善斌, 陆妩, 王志宽, 任迪远, 周东, 文林, 孙静 2012 物理学报 61 236103]
[10] Xi S B, Lu W, Ren D Y, Zhou D, Wen L, Sun J, Wu X 2012 Acta Phys. Sin. 61 236103 (in Chinese)[席善斌, 陆妩, 任迪远, 周东, 文林, 孙静, 吴雪 2012 物理学报 61 236103])
[11] McWhorter P J, Winokur P S 1986 Appl Phys. Lett. 48 133
[12] Pease R, Emily D, H E Boesch 1985 IEEE Trans. Nucl. Sci. 32 3946
[13] Chen X J, Barnaby H J, Pease R L, Schrimpf R D, Platteter D G, Dunham G 2004 IEEE Trans. Nucl. Sci. 51 3178
[14] Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185
[15] Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894
[16] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nucl. Sci. 49 2650
[17] Minson E, Sanchez I, Barnaby H J, Pease R L, Platteter D G, Dun-ham G 2004 IEEE Trans. Nucl. Sci. 51 3723
[18] Chen X J, Barnaby H J, Pease R L, Schrimpf R D, Platteter D, Shaneyfelt M, Vermeire B 2005 IEEE Trans. Nucl. Sci. 52 2245
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