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The polycrystalline Bi5-xPrxFe0.5Co0.5Ti3O15 (BPFCT-x: x=0.25, 0.50, 075, 0.80) ceramics are prepared by an improved solid state reaction method. X-ray diffraction structure analysis shows that the content of Pr has an influence on the microstructure of sample, but all the samples are layered perovskite structure. The remanent polarization (2Pr) first increases and then decreases with the increase of Pr content (x), so do the magnetic and ferroelectric properties. The remanent polarization reaches a maximum vaule of 6.43 μC/cm2, when x = 0.75. The remanent magnetization (2Mr) increases to a maximum value of 0.097 emu/g when x=0.75, and then decreases with the increase of Pr content (x). with the increase of Pr doping the ferroelectric and ferromagnetic properties of sample at room temperature can be obviously improved, and when x=0.75, multiferroic properties of the sample at room temperature is the best. The improvement in ferroelectric properties of sample is related to Pr doping. With the increase of Pr content (x), the defect concentration of the sample can be reduced, ferroelectric domain of movement can be improved, and the improvement in ferromagnetic property is possibly related to the lattice deformation which is affected by Pr.
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Keywords:
- doping /
- ferroelectric property /
- magnetism /
- dielectric property
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[25] Singh R S, Bhimasankaram T, Kumar G S, Suryananrayana S V 1994 Solid State Commun. 91 567
[26] Dong X W, Wang K F, Wan J G, Zhu J S, Liu J M 2008 J. Appl. Phys. 103 094101
[27] Singh R S, Bhimasankaram T, Kumar G S, Suryananrayana S V 1994 Solid State Commun. 91 567
[28] Zhu J, Chen X B, Lu W P, Mao X Y, Hui R 2003 Appl. Phys. Lett. 83 1818
[29] Wang W, Zhu J, Mao X Y, Chen X B 2006 Appl. Phys. Lett. 39 370
[30] Xie B C, He Q, Shen T G 2006 Acta Sin. Opt. 12 95 (in Chinese) [谢秉川, 何勤, 沈廷根 2006 量子光学学报 12 95]
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[32] Hu X, Wang W, Mao X Y, Chen X B 2010 Acta Phys. Sin. 59 8160 (in Chinese) [胡星, 王伟, 毛翔宇, 陈小兵 2010 物理学报 59 8160]
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[1] Spaldin N A, Fiebig M 2005 Science 309 391
[2] Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759
[3] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanthan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wutting M, Ramesh R 2003 Science 299 1719
[4] Sun Y, Huang Z F, Fan H G, Ming X, Wang C Z, Chen G 2009 Acta Phys. Sin. 58 193 (in Chinese) [孙源, 黄祖飞, 范厚刚, 明星, 王春忠, 陈岗 2009 物理学报 58 193]
[5] Chen X B, Hui R, Zhu J 2004 J. Appl. Phys. 96 1
[6] Park B H, Hyun S J, Bu S D, Noh T W, Lee J, Kim H-D, Kim T H, Jo W 1999 Appl. Phys. Lett. 74 1907
[7] Kubel F, Schmid H 1992 Ferroelectrics 129 101
[8] Kim S K, Miyayama M, Yanagida H 1996 Mater. Res. Bull. 31 121
[9] Porob D G, Maggard P A 2006 Mater. Res. Bull. 41 1513
[10] Singh R S, Bhimasankaram T, Kumar G S, Suryananrayana S V 1994 Solid State Commun. 91 576
[11] Srinivas A, Suryananrayana S V, Kumar G S, Mahesh K M 1999 J. Phys.: Coondens. Matter 11 3335
[12] Luo B C, Zhou C C, Chen C L, Jin K X 2009 Acta Phys. Sin. 58 4563 (in Chinese) [罗炳成, 周超超, 陈长乐, 金克新 2009 物理学报 58 4563]
[13] Mao X Y, Wang W, Chen X B, Lu Y L 2009 Appl. Phys. Lett. 95 082901
[14] Lah M A, Habout I, SDiet Z M 2009 Appl. Phys. Lett. 94 012903
[15] Liu J, Fang L, Zheng F, Ju S, Shen M 2009 Appl. Phys. Lett. 95 022511
[16] Khomchenko V A, Troyanchuk I O, Kovetskaya M I, Paixao J A 2012 J. Appl. Phys. 111 014110
[17] Guo R, Fang L, Dong W, Zheng F, Shen M 2010 J. Phys. Chem. 114 21390
[18] Li N N, Li H, Tang R L, Han D D, Zhao Y S, Gao W, Zhu P W, Wang X 2014 Chin. Phys. B 23 046105
[19] Sun S J, Ling Y H, Peng R R, Liu M, Mao X Y, Chen X B, Knized J R, Lu Y L 2013 RSC Adv. 3 18567
[20] Zheng L, Wu X S 2013 Chin. Phys. B 22 107806
[21] Mao X Y, Sun H, Wang W, Chen X B, Lu Y L 2013 Appl. Phys. Lett. 10 072904
[22] Simant K S, Gajbhiye N S, Banerjee A 2013 J. Appl. Phys. 113 203917
[23] Dong C, Wu F, Chen H 1999 J. Appl. Cryst. 32 850
[24] Yang F J, Su P, Wei C, Chen X Q, Yang C P, Cao W Q 2011 J. Appl. Phys. 110 126102
[25] Singh R S, Bhimasankaram T, Kumar G S, Suryananrayana S V 1994 Solid State Commun. 91 567
[26] Dong X W, Wang K F, Wan J G, Zhu J S, Liu J M 2008 J. Appl. Phys. 103 094101
[27] Singh R S, Bhimasankaram T, Kumar G S, Suryananrayana S V 1994 Solid State Commun. 91 567
[28] Zhu J, Chen X B, Lu W P, Mao X Y, Hui R 2003 Appl. Phys. Lett. 83 1818
[29] Wang W, Zhu J, Mao X Y, Chen X B 2006 Appl. Phys. Lett. 39 370
[30] Xie B C, He Q, Shen T G 2006 Acta Sin. Opt. 12 95 (in Chinese) [谢秉川, 何勤, 沈廷根 2006 量子光学学报 12 95]
[31] Cai M Q, Liu J C, Yang G W, Cao Y L, Tan X, Yi X, Wang Y G, Wang L L, Hu W Y 2007 J. Chem. Phys. 126 154708
[32] Hu X, Wang W, Mao X Y, Chen X B 2010 Acta Phys. Sin. 59 8160 (in Chinese) [胡星, 王伟, 毛翔宇, 陈小兵 2010 物理学报 59 8160]
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