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Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET

Yang Shuai Tang Xiao-Yan Zhang Yu-Ming Song Qing-Wen Zhang Yi-Men

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Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET

Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men
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  • SiC semi-superjunction vertical double diffused MOS (VDMOSFET) has higher breakdown voltage than conventional SiC VDMOSFET with the same on-resistance. The ion implantation to form p pillar region on N-type epilayer is a key process to form semi-superjunction stucture. The influences of charge imbalance induced by ion implantation on breakdown voltages of 4H-SiC superjunction and semi-superjunction VDMOSFET are investigated through two-dimensional numerical simulation, and the largest breakdown voltage is obtained when charge imbalance is 30%. With the same structure parameters of devices, when breakdown voltage decreases by 15% due to the deviation of doping concentration in P pillars, the tolerance of doping concentration for the semi-superjunction VDMOSFET is 69.5% higher than for superjunction VDMOSFET which means that less precise process control of ion implantation for semi-superjunction VDMOSFET, will be required with less difficulty in the manufacture of pillars.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274079, 61176070), the Natural Science Foundation of Shananxi, China (Grant No. 2013JQ8012), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos. 20130203120017, 20110203110010), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).
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    Yu L C, Sheng K 2006 Solid-State Electron 50 1062

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    Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 566 (in Chinese) [杨银堂, 耿振海, 段宝兴, 贾护军, 余涔, 任丽丽 2010 物理学报 59 566]

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    Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254

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    Cao L, Pu H B, Chen Z M, Zang Y 2012 Chin. Phys. B 21 017303

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    Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Ogura T 2003 Proceedings of IEEE 15th International Symposium on Power Semiconductor Devices and ICs Cambridge, UK, April 14-17, 2003 p45

    [9]

    Ono S, Saito W, Takashita M, Kurushima S, Tokano K, Yamaguchi M 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Jeju, Korea, May 27-30, 2007 p25

    [10]

    Wang Y, Hu H F, Cheng C 2010 Superlattices Microstuct 47 314

    [11]

    Yu L C, Sheng K 2008 IEEE Trans. Electron Dev. 55 1961

    [12]

    Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Ogura T 2005 IEEE Trans. Electron Dev. 52 2317

    [13]

    Shenoy P M, Bhalla A, Dolny G M 1999 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Toronto, Ont, May 26-28, 1999 p99

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    ISE I S E A 2004 ISE TCAD Release 10.0 DESSISTM (Zurich: ISE Integrated Systems Engineering AG) pp143-621

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    Song Q W, Zhang Y M, Zhang Y M, Tang X Y 2012 Diamond Relat. Mater. 22 42

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    Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y, Wang Z X 2010 Chin. Phys. B 19 047201

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    Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer Science + Business Media) pp310-311

  • [1]

    Xu J P, Li C X, Wu H P 2005 Acta Phys. Sin. 54 2918 (in Chinese) [徐静平, 李春霞, 吴海平 2005 物理学报 54 2918]

    [2]

    Singh R, Cooper Jr J A, Melloch M R, Chow T P, Palmour J W 2002 IEEE Trans. Electron Dev. 49 665

    [3]

    Casady J B, Agarwal A K, Rowland L B, Valek W F, Brandt C D 1997 Device Research Conference Digest Fort Collins, USA, June 23-25, 1997 p32

    [4]

    Yu L C, Sheng K 2006 Solid-State Electron 50 1062

    [5]

    Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 566 (in Chinese) [杨银堂, 耿振海, 段宝兴, 贾护军, 余涔, 任丽丽 2010 物理学报 59 566]

    [6]

    Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254

    [7]

    Cao L, Pu H B, Chen Z M, Zang Y 2012 Chin. Phys. B 21 017303

    [8]

    Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Ogura T 2003 Proceedings of IEEE 15th International Symposium on Power Semiconductor Devices and ICs Cambridge, UK, April 14-17, 2003 p45

    [9]

    Ono S, Saito W, Takashita M, Kurushima S, Tokano K, Yamaguchi M 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Jeju, Korea, May 27-30, 2007 p25

    [10]

    Wang Y, Hu H F, Cheng C 2010 Superlattices Microstuct 47 314

    [11]

    Yu L C, Sheng K 2008 IEEE Trans. Electron Dev. 55 1961

    [12]

    Saito W, Omura I, Aida S, Koduki S, Izumisawa M, Yoshioka H, Ogura T 2005 IEEE Trans. Electron Dev. 52 2317

    [13]

    Shenoy P M, Bhalla A, Dolny G M 1999 Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs Toronto, Ont, May 26-28, 1999 p99

    [14]

    ISE I S E A 2004 ISE TCAD Release 10.0 DESSISTM (Zurich: ISE Integrated Systems Engineering AG) pp143-621

    [15]

    Song Q W, Zhang Y M, Zhang Y M, Tang X Y 2012 Diamond Relat. Mater. 22 42

    [16]

    Song Q W, Zhang Y M, Zhang Y M, Zhang Q, Guo H, Li Z Y, Wang Z X 2010 Chin. Phys. B 19 047201

    [17]

    Baliga B J 2008 Fundamentals of Power Semiconductor Devices (New York: Springer Science + Business Media) pp310-311

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Publishing process
  • Received Date:  13 April 2014
  • Accepted Date:  13 June 2014
  • Published Online:  05 October 2014

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