Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor

Wang Xin; Lu Wu; Wu Xue; Ma Wu-Ying; Cui Jiang-Wei; Liu Mo-Han; Jiang Ke

doi:10.7498/aps.63.226101

Abstract

The metal-oxide-semiconductor field-effect transistor (MOSFET) and the parasitic bipolar transistor of domestic complementary metal oxide semiconductor (CMOS) process are irradiated with 60Coγ rays to investigate the failure mechanism of the mixed-signal ICs fabricated by deep submicron CMOS process, caused by total dose radiation. The research results are as follows. 1) The parasitic sidewall and top corner regions contribute to the intra-device leakage. 2) The parasitic bipolar transistor of CMOS process is not sensitive to total dose radiation, which is very different from the conventional bipolar transistor. Preliminary analysis suggests that the difference originates from the differences in the structural and making process. 3) The total dose radiation damage to the parasitic bipolar transistors is not coupled with the damage to the NMOS transistor in the same CMOS process. 4) Based on the above study, the radiation failure mechanisms of the analog and digital module in mixed-signal ICs fabricated respectively by the domestic and commercial CMOS process are investigated. Preliminary analysis suggests that the increase of off-leakage current of MOSFET is responsible mainly for the increase in power consumption of digital module, and the insensitivity of bandgap voltage reference to total dose radiation originates from the radiation resistance of the parasitic bipolar transistor which is the important part of bandgap voltage reference in CMOS mixed-signal ICs.

Keywords:

Authors and contacts

1.
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2.
Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3.
University of Chinese Academy of Sciences, Beijing 100049, China
Funds: Project supported by the Foundation of National Laboratory of Analog Integrated Circuits, China (Grant No. 9140C090401120C09036).

References

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[2]	Lacoe R C 2010 IEEE Trans. Nucl. Sci. 55 1903
[3]	Johnston A H, Swimm R T, Allen G R 2009 IEEE Trans. Nucl. Sci. 56 1941
[4]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 070701
[5]	Chen H F, Guo L X 2012 Acta Phys. Sin. 61 028501 (in Chinese) [陈海峰, 过立新 2012 物理学报 61 028501]
[6]	Cui J W, Yu X F, Ren D Y, Lu J 2012 Acta Phys. Sin. 61 026102 (in Chinese) [崔江维, 余学峰, 任迪远, 卢建 2012 物理学报 61 026102]
[7]	Ning B X, Hu Z Y, Zhang Z X, Bi D W, Huang H X, Dai R F, Zhang Y W, Zou S C 2013 Acta Phys. Sin. 62 076104 (in Chinese) [宁冰旭, 胡志远, 张正选, 毕大炜, 黄辉祥, 戴若凡, 张彦伟, 邹世昌 2013 物理学报 62 076104]
[8]	Kruckmeyer K, Prater J S, Brown B, Trinh T 2011 IEEE Trans. Nucl. Sci. 58 1023
[9]	Faccio F, Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[10]	Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M, Ronald D S 2008 Microelectron. Reliab. 48 1000
[11]	Youk G U, Khare P S, Schrimpf R D, Massengill L W 1999 IEEE Trans. Nucl. Sci. 46 1830
[12]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Chin. Phys. Lett. 28 070701
[13]	Pease R L 2003 IEEE Trans. Nucl. Sci. 50 539
[14]	Johnston A H, Rax B G, Lee C I 1995 IEEE Trans. Nucl. Sci. 42 1650
[15]	Schmidt D M, Fleetwood D M, Schrimpf R D, Pease R L 1995 IEEE Trans. Nucl. Sci. 42 1541
[16]	Freitag R K, Brown D B 1998 IEEE Trans. Nucl. Sci. 45 2649
[17]	Fleetwood D M, Schrimpf R D, Pantelides S T, Pease R L, Dunham G W 2008 IEEE Trans. Nucl. Sci. 55 2986
[18]	Razavi B 2001 Design of Analog CMOS Integrated Circuits (New York: The McGraw-Hill Press)
[19]	Martin K 2001 Digital Integrated Circuit Design (Oxford: Oxford University Press)

Cited By

[1]	Johns D A, Matin K 1997 Analog Integrated Circuit Design E1 (New York: John Wiley & Sons Inc) pp357-364
[2]	Lacoe R C 2010 IEEE Trans. Nucl. Sci. 55 1903
[3]	Johnston A H, Swimm R T, Allen G R 2009 IEEE Trans. Nucl. Sci. 56 1941
[4]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C 2011 Chin. Phys. B 20 070701
[5]	Chen H F, Guo L X 2012 Acta Phys. Sin. 61 028501 (in Chinese) [陈海峰, 过立新 2012 物理学报 61 028501]
[6]	Cui J W, Yu X F, Ren D Y, Lu J 2012 Acta Phys. Sin. 61 026102 (in Chinese) [崔江维, 余学峰, 任迪远, 卢建 2012 物理学报 61 026102]
[7]	Ning B X, Hu Z Y, Zhang Z X, Bi D W, Huang H X, Dai R F, Zhang Y W, Zou S C 2013 Acta Phys. Sin. 62 076104 (in Chinese) [宁冰旭, 胡志远, 张正选, 毕大炜, 黄辉祥, 戴若凡, 张彦伟, 邹世昌 2013 物理学报 62 076104]
[8]	Kruckmeyer K, Prater J S, Brown B, Trinh T 2011 IEEE Trans. Nucl. Sci. 58 1023
[9]	Faccio F, Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[10]	Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M, Ronald D S 2008 Microelectron. Reliab. 48 1000
[11]	Youk G U, Khare P S, Schrimpf R D, Massengill L W 1999 IEEE Trans. Nucl. Sci. 46 1830
[12]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Chin. Phys. Lett. 28 070701
[13]	Pease R L 2003 IEEE Trans. Nucl. Sci. 50 539
[14]	Johnston A H, Rax B G, Lee C I 1995 IEEE Trans. Nucl. Sci. 42 1650
[15]	Schmidt D M, Fleetwood D M, Schrimpf R D, Pease R L 1995 IEEE Trans. Nucl. Sci. 42 1541
[16]	Freitag R K, Brown D B 1998 IEEE Trans. Nucl. Sci. 45 2649
[17]	Fleetwood D M, Schrimpf R D, Pantelides S T, Pease R L, Dunham G W 2008 IEEE Trans. Nucl. Sci. 55 2986
[18]	Razavi B 2001 Design of Analog CMOS Integrated Circuits (New York: The McGraw-Hill Press)
[19]	Martin K 2001 Digital Integrated Circuit Design (Oxford: Oxford University Press)

Catalog

Vol. 63, Issue 22 - 2014-11-20

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