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Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

Bai Yu-Rong Xu Jing-Ping Liu Lu Fan Min-Min Huang Yong Cheng Zhi-Xiang

Citation:

Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang
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  • Abstract views:  4857
  • PDF Downloads:  340
  • Cited By: 0
Publishing process
  • Received Date:  30 June 2014
  • Accepted Date:  01 August 2014
  • Published Online:  05 December 2014

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