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A series of β-Sr2SiO4: Eu2+, La3+ phosphors have been synthesized via high temperature solid state reaction. Photoluminescence (PL), long persistent luminescence (LPL), and the photo-stimulated luminescence (PSL) suggest that Eu2+ ions occupy Sr(1) and Sr(2) sites. Significant enhancement of PL, LPL and PSL has been observed by co-doping La3+ in β-Sr2SiO4: Eu2+, La3+. Meanwhile, the introduction of La3+ ions increases significantly the intensities of the TL bands (T1 and T3 regions), and promotes the formation of a large number of traps in LPL and PSL. In addition, the observation of the PSPL(photo-stimulated long persistent luminescence) phenomenon demonstrates the occurrence of electrons which are retrapped by the shallow traps in the LPL process.
[1] Johnson E J, Kafalas J, Dyes W A 1982 Appl Phys. Lett. 40 993
[2] Cho Y, Kim D S, Choe B, Lim H, Kim D 1997 Phys. Rev. B 56 R4375
[3] Nanto H, Hirai Y, Ikeda M, Kadota M, Nishishita J, Nasu S, Douguchi Y 1996 Sensor and Actuators A:Physical 53 223
[4] Nanto H, Douguchi Y, Nishishita J, Kadota M, Kashiwagi N, Shinkawa T, and Nasu S 1997 Jpn. J. Appl. Phys. 36 421
[5] Yamashita S A, Ogawa N 1989 Phys. Status. Solidi B 118 89
[6] Wang Y S, Wang J Y, Zhang X Q, Zhang G Y, Liu J, Li Z F, Li J, Xiong G N, Xu Z, Xu S R 1996 Acta Phys. Sin. 45 635 (in Chinese) [王永生, 王吉有, 张雪强, 张光寅, 刘健, 李增发, 李加, 熊光楠, 徐征, 徐舒瑢 1996 物理学报 45 635]
[7] Sun X Y, Zhang J H, Zhang X, Luo Y S, and Wang X J 2008 J. Phys. D 41 195414
[8] Sun X Y, Zhang J H, Zhang X, Luo Y S, Hao Z D, Wang X J 2009 J. Appl. Phys. 105 013501
[9] Matsuzawa T, Aoki Y, Takeuchi N, Maruyama Y 1996 J. Electrochem. Soc. 143 2670
[10] Lei B, Li B, Zhang H, Li W 2007 Opt. Mater. 29 1491
[11] Qin Q S, Ma X L, Shao Y, Yang X Y, Sheng H F, Yang J Z, Yin Y, Zhang J C 2012 Acta Phys. Sin. 61 097804 (in Chinese) [秦青松, 马新龙, 邵宇, 杨星瑜, 盛鸿飞, 杨靖忠, 尹瑶, 张加驰 2012 物理学报 61 097804]
[12] Park J K, Lim M A, Kim C H, Park H D, Park J T, Choi S Y 2007 Appl. Phys. Lett. 82 683
[13] Kim J S, Park Y H, Kim S M, Choi J C, Park H L 2005 Solid State Communications 133 445
[14] Wang Z J, Yang Z P, Guo Q L, Li P L, Fu G S 2009 Chin. Phys. B 18 2068
[15] Nag A, Kutty T R N 2004 J. Mater. Chem. 14 1598
[16] Lakshminarasimhan N, Varadaraju U V 2005 J. Electrochem. Soc. 152 H152
[17] Kim J S, Jeon P E Choi J C, Park H L 2005 Solid-State Commun. 133 187
[18] Liu X, Zhang J H, Zhang X, Hao Z D, Qiao J, Dong X L 2013 Opt. let. 38 148
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[1] Johnson E J, Kafalas J, Dyes W A 1982 Appl Phys. Lett. 40 993
[2] Cho Y, Kim D S, Choe B, Lim H, Kim D 1997 Phys. Rev. B 56 R4375
[3] Nanto H, Hirai Y, Ikeda M, Kadota M, Nishishita J, Nasu S, Douguchi Y 1996 Sensor and Actuators A:Physical 53 223
[4] Nanto H, Douguchi Y, Nishishita J, Kadota M, Kashiwagi N, Shinkawa T, and Nasu S 1997 Jpn. J. Appl. Phys. 36 421
[5] Yamashita S A, Ogawa N 1989 Phys. Status. Solidi B 118 89
[6] Wang Y S, Wang J Y, Zhang X Q, Zhang G Y, Liu J, Li Z F, Li J, Xiong G N, Xu Z, Xu S R 1996 Acta Phys. Sin. 45 635 (in Chinese) [王永生, 王吉有, 张雪强, 张光寅, 刘健, 李增发, 李加, 熊光楠, 徐征, 徐舒瑢 1996 物理学报 45 635]
[7] Sun X Y, Zhang J H, Zhang X, Luo Y S, and Wang X J 2008 J. Phys. D 41 195414
[8] Sun X Y, Zhang J H, Zhang X, Luo Y S, Hao Z D, Wang X J 2009 J. Appl. Phys. 105 013501
[9] Matsuzawa T, Aoki Y, Takeuchi N, Maruyama Y 1996 J. Electrochem. Soc. 143 2670
[10] Lei B, Li B, Zhang H, Li W 2007 Opt. Mater. 29 1491
[11] Qin Q S, Ma X L, Shao Y, Yang X Y, Sheng H F, Yang J Z, Yin Y, Zhang J C 2012 Acta Phys. Sin. 61 097804 (in Chinese) [秦青松, 马新龙, 邵宇, 杨星瑜, 盛鸿飞, 杨靖忠, 尹瑶, 张加驰 2012 物理学报 61 097804]
[12] Park J K, Lim M A, Kim C H, Park H D, Park J T, Choi S Y 2007 Appl. Phys. Lett. 82 683
[13] Kim J S, Park Y H, Kim S M, Choi J C, Park H L 2005 Solid State Communications 133 445
[14] Wang Z J, Yang Z P, Guo Q L, Li P L, Fu G S 2009 Chin. Phys. B 18 2068
[15] Nag A, Kutty T R N 2004 J. Mater. Chem. 14 1598
[16] Lakshminarasimhan N, Varadaraju U V 2005 J. Electrochem. Soc. 152 H152
[17] Kim J S, Jeon P E Choi J C, Park H L 2005 Solid-State Commun. 133 187
[18] Liu X, Zhang J H, Zhang X, Hao Z D, Qiao J, Dong X L 2013 Opt. let. 38 148
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