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The GaN thin films with different doping concentrations are grown by metal organic chemical vapor deposition. Carrier concentrations, mobilities and Seebeck coefficients of the GaN thin films are measured by Hall and Seebeck system at room temperature. The power factor and the thermoelectric figure of merit are calculated by experimental and theoretical data. The mobility and Seebeck coefficient of GaN thin film decrease with the increase of carrier concentration. The conductivity of GaN thin film increases with the increase of carrier concentration. The Seebeck coefficient of GaN thin film varies from 100 to 500 μV/K, depending on carrier concentration. The highest power factor is 4.72×10-4 W/mK2 when the carrier concentration is 1.60×1018 cm-3. The thermal conductivity of GaN thin film decreases with the increase of carrier concentration due to the increase of phonon scattering. The largest thermoelectric figure of merit of the GaN thin film at room temperature is 0.0025 when the carrier concentration is 1.60×1018 cm-3.
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Keywords:
- GaN thin films /
- thermoelectric properties
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[2] Snyder G J, Toberer E S 2008 Nat. Mater. 7 105
[3] Wang S F, Chen S S, Chen J C, Yan G Y, Qiao X Q, Liu F Q, Wang J L, Ding X C, Fu G S 2012 Acta Phys. Sin. 61 066804 (in Chinese) [王淑芳, 陈珊珊, 陈景春, 闫国英, 乔小齐, 刘富强, 王江龙, 丁学成, 傅广生 2012 物理学报 61 066804]
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[5] Wu Z H, Xie H Q, Zeng Q F 2013 Acta Phys. Sin. 62 097301 (in Chinese) [吴子华, 谢华清, 曾庆峰 2013 物理学报 62 097301]
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[9] Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C, Hao Y 2014 Chin. Phys. B 23 097307
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[13] Hurwitz E, Asghar M, Melton A, Kucukgok B, Su L, Orocz M, Jamil M, Lu N, Ferguson I 2011 J. Electron. Mater. 40 513
[14] Zhang J, Kutlu S, Liu G Y, Tansu S 2011 J. Appl. Phys. 110 043710
[15] Sztein A, Ohta H, Bowers J E, DenBaars S P, Nakamura S 2011 J. Appl. Phys. 110 123709
[16] You J H, Lu J Q, Johnson H T 2006 J. Appl. Phys. 99 033706
[17] Brandt M S, Herbst P, Angerer A, Ambacher O, Stutzmann M 1998 Phys. Rev. B 58 7786
[18] Zou J, Kotchetkov D, Balandin A A, Florescu D I, Pollak F H 2002 J. Appl. Phys. 92 2534
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[1] Pei Y, Shi X Y, LaLonde A, Wang H, Chen L, Snyder G J 2011 Nature 473 66
[2] Snyder G J, Toberer E S 2008 Nat. Mater. 7 105
[3] Wang S F, Chen S S, Chen J C, Yan G Y, Qiao X Q, Liu F Q, Wang J L, Ding X C, Fu G S 2012 Acta Phys. Sin. 61 066804 (in Chinese) [王淑芳, 陈珊珊, 陈景春, 闫国英, 乔小齐, 刘富强, 王江龙, 丁学成, 傅广生 2012 物理学报 61 066804]
[4] Lu N, Ferguson I 2013 Semi. Sci. Technol. 28 074023
[5] Wu Z H, Xie H Q, Zeng Q F 2013 Acta Phys. Sin. 62 097301 (in Chinese) [吴子华, 谢华清, 曾庆峰 2013 物理学报 62 097301]
[6] Wang B Z, Wang X L, Wang X Y, Guo L C, Wang X H, Xiao H L, Liu H X 2007 J. Phys. D: Appl. Phys. 40 765
[7] Wang B Z, Wang X L, Hu G X, Ran J X, Wang X H, Guo L C, Xiao H L, Li J P, Zeng Y P, Li J M, Wang Z G 2006 Chin. Phys. Lett. 23 2187
[8] Liu Z H, Zhang L L, Li Q F, Zhang R, Xiu X Q, Xie Z L, Shan Y 2014 Acta Phys. Sin. 63 207304 (in Chinese) [刘战辉, 张李骊, 李庆芳, 张荣, 修向前, 谢自力, 单云 2014 物理学报 63 207304]
[9] Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C, Hao Y 2014 Chin. Phys. B 23 097307
[10] Sztein A, Ohta H, Sonoda J, Ramu A, Bowers J E, DenBaars S P, Nakamura S 2009 Appl. Phys. Express 2 111003
[11] Wu W T, Wu K C, Ma Z J, Sa R J, Wei Y Q, Li Q H 2012 Chin. J. Struct. Chem. 31 1631
[12] Sztein A, Haberstroh J, Bowers J E, DenBaars S P, Nakamura S 2013 J. Appl. Phys. 113 183707
[13] Hurwitz E, Asghar M, Melton A, Kucukgok B, Su L, Orocz M, Jamil M, Lu N, Ferguson I 2011 J. Electron. Mater. 40 513
[14] Zhang J, Kutlu S, Liu G Y, Tansu S 2011 J. Appl. Phys. 110 043710
[15] Sztein A, Ohta H, Bowers J E, DenBaars S P, Nakamura S 2011 J. Appl. Phys. 110 123709
[16] You J H, Lu J Q, Johnson H T 2006 J. Appl. Phys. 99 033706
[17] Brandt M S, Herbst P, Angerer A, Ambacher O, Stutzmann M 1998 Phys. Rev. B 58 7786
[18] Zou J, Kotchetkov D, Balandin A A, Florescu D I, Pollak F H 2002 J. Appl. Phys. 92 2534
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