Hall effect of different textured CVD diamond films

Su Qing-Feng; Liu Chang-Zhu; Wang Lin-Jun; Xia Yi-Ben

doi:10.7498/aps.64.117301

Abstract

Due to its smoothest surface, fewer defects, and better crystal quality, [100] textured diamond film is well suited for the application of optoelectronic and microelectronic devices. Carrier concentration and mobility are very important parameters of semiconductor materials. In order to further broadening the application of diamond films in optoelectronics and microelectronics, it is necessary to made a research on Hall effect characteristics of [100] textured and [111] textured films. In this paper, different textured polycrystalline diamond films are deposited on silicon substrates by hot filament chemical vapor deposition (HFCVD) method under different conditions. Microstructures of diamond films are characterized by X-ray diffraction (XRD). High quality [100] textured and [111] textured diamond films are obtained. Dark current-voltage (I-V) characteristics of different-oriented films after annealing are investigated at room temperature. The carrier concentration and mobility of diamond films are measured by Hall effect test system as the temperature changing from 100 to 500 K. Results indicate that the textures of diamond films affect the value of carrier mobility:carrier concentration increases and mobility decreases with the decrease of temperature; and the deposited films are of p-type materials. The carrier concentration and mobility of polycrystalline [100]-textured diamond films at room temperature are 4.3×104 cm-3 and 76.5 cm2/V·s, respectively.

Keywords:

Authors and contacts

1.
Institute of New Energy, Shanghai Lianfu New Energy S&T Group Co., Ltd, Shanghai 201201, China;
2.
School of Materials Science and Engineering Shanghai University, Shanghai 200444, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61176072), and the Shanghai Talent Development Fund, China (Grant No. 201425).

References

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Cited By

[1]	Zieliński A, Bogdanowicz R, Ryl J, Burczyk L, Darowicki K 2014 Appl. Phys. Lett. 105 131908
[2]	Chatterjee V, Harniman R, May P W, Barhai P K 2014 Appl. Phys. Lett. 104 171907
[3]	Zhuang C Q, Liu L 2015 Chin. Phys. B 24 018101
[4]	Zheng Y J, Huang G F, Li Z C, Zuo G H 2014 Chin. Phys. B 23 118102
[5]	Yang C, Wang X P, Wang L J, Pan X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101
[6]	Gu C Z, Wang Q, Li J J, Xia K 2013 Chin. Phys. B 22 098107
[7]	Wang R, Hu X J 2014 Acta Phys. Sin. 63 148102 (in Chinese) [王锐, 胡晓君 2014 物理学报 63 148102]
[8]	Zhou Z X Jia X P, Li Y Yan B M, Wang F B Fang C Chen N Li Y D Ma H A 2014 Acta Phys. Sin. 63 248104 (in Chinese) [周振翔, 贾晓鹏, 李勇, 颜丙敏, 王方标, 房超, 陈宁, 李亚东, 马红安 2014 物理学报 63 248104]
[9]	Su Q F, Liu J M, Wang L J, Shi W M, Xia Y B 2006 Acta Phys. Sin. 55 5145 (in Chinese) [苏青峰, 刘健敏, 王林军, 史伟民, 夏义本 2006 物理学报 55 5145]
[10]	Xia Y B, Sekiguchi T, Zhang W J, Jiang X, Wu W H, Yao T 2000 J. Cryst. Growth 213 328
[11]	Tang C J, Fernandes A J S, Jiang X F, Pinto J L 2012 Diamond Relat. Mater. 24 93
[12]	Thanry M A P, Berini B, Stenger I, Chikoiolze E, Lusson A, Jomard F, Chevallier J, Barjon J 2012 Appl. Phys. Lett. 100 192109
[13]	Kato H, Yamasaki S, Okushi H 2005 Appl. Phys. Lett. 86 222111
[14]	Zhu L L 2015 Chin. Phys. B 24 016201
[15]	Zhang H, Yang S Y, Liu G P, Wang J X, Jin D D, Li H J, Liu X L, Zhu Q S, Wang Z G 2014 Chin. Phys. B 23 017305
[16]	Zeng L, Xin Z, Chen S W, Du G, Kang J F, Liu X Y 2014 Chin. Phys. Lett. 31 027301
[17]	Williams O A, Curat S, Gerb J E, Gruen D M, Jackman R B 2004 Appl. Phys. Lett. 85 1680
[18]	Ri S G, Takeuchi D, Kato H, Ogura M, Makino T, Yamasaki S, Okushi H, Rezek B, Nebel C E 2005 Appl. Phys. Lett. 87 262107
[19]	Isberg J, Gabrysch M, Majdi S, Twitchen D J 2012 Appl. Phys. Lett. 100 172103
[20]	Majdi S, Kovi K K, Hammersberg J, Issberg J 2013 Appl. Phys. Lett. 102 152113
[21]	Zhang X X, Shi T S, Wang J X, Zhang X K 1995 J. Cryst. Growth 155 66
[22]	Williams O A, Jackman R B, Nebel C, Foord J S 2003 Semicond. Sci. Technol. 18 S77
[23]	Sauerer C, Ertl F, Nebel C E, Stutzmann M, Bergonzo P, Willianms O A, Jackman R A 2001 Phys. Stat. Sol. A 186 241
[24]	Ristein J 2000 Diamond Relat. Mater. 9 1129
[25]	Mott N F, Twose T D 1961 Adv. Phys. 10 107
[26]	Look D C, Molnar R J 1997 Appl. Phys. Lett. 70 3377
[27]	Williams O A, Jackman R B, Nebel C, Foord J S 2002 Diamond Relat. Mater. 11 396
[28]	Jiang N, Ito T 1999 J. Appl. Phys. 85 8267
[29]	Looi H J, Jackman R B, Foord J S 1998 Appl. Phys. Lett. 72 353

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Vol. 64, Issue 11 - 2015-06-05

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