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The p-type porous silicon layer with the aperture about 1.5 microns and hole depth about 15-20 microns is prepared by electrochemical etching of a p-type monocrystalline silicon wafer with a resistivity 10-15 Ω·cm and along [100] orientation in a double-tank cell which consists of the electrolyte (volume ratio HF: DMF=1:2). Silver nanoparticles film with different thickness has been deposited on porous silicon by the electroless deposition for different deposition times. Morphology and microstructure of the silver nanoparticles/porous silicon composite are studied by scanning electron microscope and X ray diffracmeter. Result indicates that the silver nanoparticles are uniformly distributed on the surface of porous silicon and the deposition time has an important influence on the morphology of the composite. The gas-sensing properties of the silver nanoparticles/porous silicon composite to NH3 are tested at room temperature by the static volumetric method. Results show that the deposition time has a significant impact on the gas-sensing properties of the silver nanoparticles/porous silicon. In a short deposition time, the composite with an appropriate amount of silver nanoparticles doped on the porous silicon shows good gas-sensing properties to NH3 with high sensitivity, fast response-recovery characteristic due to the high specific surface area and special microstructure. At room temperature, the gas sensor has a sensitivity of about 5.8 to 50 ppm NH3.
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Keywords:
- porous silicon /
- silver nanoparticles /
- electroless deposition /
- gas-sensing property
[1] Chen H Q, Hu M, Zeng J, Wang W D 2012 Chinese Physics B 21 58201
[2] Li M D, Hu M, Zeng P, Ma S Y, Yan W J, Qin Y X 2013 Electrochim Acta 108 167
[3] Li M D, Hu M, Liu Q L, Ma S Y, Sun P 2013 Appl Surf Sci. 268 188
[4] Ozdemir S, Gole J L 2010 Sensor Actuat B-Chem. 151 274
[5] Razi F, Rahimi F 2008 Sensor Actuat B-Chem. 132 40
[6] Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Li C Q 2013 Mater Lett. 112 12
[7] Zeng P, Zhang P, Hu M, Ma S Y, Yan W J 2014 Chinese Physics B 23 58103
[8] Ali N K, Hashim M R, Aziz A A 2008 Solid State Electron. 52 1071
[9] Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波, 胡明, 张伟, 张绪瑞, 李德军, 王明霞 2007 物理学报 56 4032]
[10] Sun P, Hu M, Liu B, Sun F Y, Xu L J 2011 Acta Phys. Sin. 60 050704 (in Chinese) [孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 物理学报 60 050704]
[11] Balucani M, Nenzi P, Chubenko E, Klyshko A, Bondarenko V 2011 Journal of Nanoparticle Research. 13 5985
[12] Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Qin Y X 2014 Sensor Actuat B-Chem. 192 341
[13] Ma S Y, Hu M, Zeng P, Yan W J, Li M D 2013 Mater Lett. 99 57
[14] Kanungo J, Saha H, Basu S 2010 Sensor Actuat B-Chem. 147 128
[15] Yan W J, Hu M, Zeng P, Ma S Y, Li M D 2014 Appl. Surf. Sci. 292 551
[16] S. Ozdemir, J. L. Gole 2010 Sensor Actuat B-Chem. 151 274
[17] Yan D L, Hu M, Li S Y, Liang J R, Wu Y Q, Ma S Y 2014 Electrochim Acta. 115 297
[18] Mareš J, Krištofik J, Hulicius E 1995 Thin Solid Films. 255 272
[19] Hu M, Liu Q L, Jia D L, Li M D 2013 Acta Phys. Sin. 62 057102 (in Chinese) [胡明, 刘青林, 贾丁立, 李明达 2013 物理学报 62 057102]
[20] Sun P, Hu M, Li M D, Ma S Y 2012 Acta Physico-Chimica Sinica. 02 489
[21] Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V La, Quercia L, Francia G Di, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sensor Actuat B-Chem. 68 74
[22] Salonen J, Lehto V P, Laine E 1997 Appl. Surf. Sci. 120 191.
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[1] Chen H Q, Hu M, Zeng J, Wang W D 2012 Chinese Physics B 21 58201
[2] Li M D, Hu M, Zeng P, Ma S Y, Yan W J, Qin Y X 2013 Electrochim Acta 108 167
[3] Li M D, Hu M, Liu Q L, Ma S Y, Sun P 2013 Appl Surf Sci. 268 188
[4] Ozdemir S, Gole J L 2010 Sensor Actuat B-Chem. 151 274
[5] Razi F, Rahimi F 2008 Sensor Actuat B-Chem. 132 40
[6] Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Li C Q 2013 Mater Lett. 112 12
[7] Zeng P, Zhang P, Hu M, Ma S Y, Yan W J 2014 Chinese Physics B 23 58103
[8] Ali N K, Hashim M R, Aziz A A 2008 Solid State Electron. 52 1071
[9] Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波, 胡明, 张伟, 张绪瑞, 李德军, 王明霞 2007 物理学报 56 4032]
[10] Sun P, Hu M, Liu B, Sun F Y, Xu L J 2011 Acta Phys. Sin. 60 050704 (in Chinese) [孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 物理学报 60 050704]
[11] Balucani M, Nenzi P, Chubenko E, Klyshko A, Bondarenko V 2011 Journal of Nanoparticle Research. 13 5985
[12] Ma S Y, Hu M, Zeng P, Li M D, Yan W J, Qin Y X 2014 Sensor Actuat B-Chem. 192 341
[13] Ma S Y, Hu M, Zeng P, Yan W J, Li M D 2013 Mater Lett. 99 57
[14] Kanungo J, Saha H, Basu S 2010 Sensor Actuat B-Chem. 147 128
[15] Yan W J, Hu M, Zeng P, Ma S Y, Li M D 2014 Appl. Surf. Sci. 292 551
[16] S. Ozdemir, J. L. Gole 2010 Sensor Actuat B-Chem. 151 274
[17] Yan D L, Hu M, Li S Y, Liang J R, Wu Y Q, Ma S Y 2014 Electrochim Acta. 115 297
[18] Mareš J, Krištofik J, Hulicius E 1995 Thin Solid Films. 255 272
[19] Hu M, Liu Q L, Jia D L, Li M D 2013 Acta Phys. Sin. 62 057102 (in Chinese) [胡明, 刘青林, 贾丁立, 李明达 2013 物理学报 62 057102]
[20] Sun P, Hu M, Li M D, Ma S Y 2012 Acta Physico-Chimica Sinica. 02 489
[21] Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V La, Quercia L, Francia G Di, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sensor Actuat B-Chem. 68 74
[22] Salonen J, Lehto V P, Laine E 1997 Appl. Surf. Sci. 120 191.
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