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Research progress on oxide-based thin film transisitors

Lan Lin-Feng Zhang Peng Peng Jun-Biao

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Research progress on oxide-based thin film transisitors

Lan Lin-Feng, Zhang Peng, Peng Jun-Biao
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  • Oxide semiconductor is regarded as one of most suitable active materials of thin-film transistors (TFTs) for driving organic light-emitting diodes because of its advantages of high mobility, low-temperature processing, good electrical uniformity, visible-light transparency, and low cost. Currently oxide TFTs have been successfully applied to the backplanes of the flat-panel displays. This review gives a comprehensive understanding of the development process of oxide TFTs. In the present article, we review the major trend in the field of oxide TFTs. First, the questions of how to achieve high-mobility and high-stability oxide semiconductors are introduced, and the carrier transport mechanism is also addressed. Next, the device structures and the fabrication processes of the oxide TFTs are introduced. The electrical instability of the oxide TFTs is also discussed, which is critical for their applications in backplanes of the flat-panel displays. Especially, the mechanism of the threshold voltage instability of the oxide TFTs under negative bias illuminant stress is discussed in detail. Finally, the applications of oxide TFTs in flat-panel displays, such as active matrix organic light-emitting diodes and flexible displays, are addressed.
      Corresponding author: Lan Lin-Feng, lanlinfeng@scut.edu.cn
    • Funds: Project supported by the National High Technology Research and Developmeng Program of China (Grant No. 2014AA033002), the National Basic Research Program of China (Grant No. 2015CB655000), and the National Natural Science Foundation of China (Grant Nos. 61204087, 51173049).
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  • [1]

    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488

    [2]

    Zhang L R, Ma X X, Wang C F, Li G M, Xia X H, Luo D X, Wu W J, Xu M, Wang L, Peng J B 2016 Acta Phys. Sin. 65 028501 (in Chinese) [张立荣, 马雪雪, 王春阜, 李冠明, 夏兴衡, 罗东向, 吴为敬, 徐苗, 王磊, 彭俊彪 2016 物理学报 65 028501]

    [3]

    Liu Y, Wu W J, Li B, En Y F, Wang L, Liu Y R 2014 Acta Phys. Sin. 63 098503 (in Chinese) [刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣 2014 物理学报 63 098503]

    [4]

    Klasens H A, Koelmans H 1964 Solid-State Electron. 7 701

    [5]

    Hoffman R L, Norris B J, Wager J F 2003 Appl. Phys. Lett. 82 733

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    Faber H, Burkhardt M, Jedaa A, Klblein D, Klauk H, Halik M 2009 Adv. Mater. 21 3099

    [8]

    Sun B, Sirringhaus H 2005 Nano Lett. 5 2408

    [9]

    Norris B J, Anderson J, Wager J F, Keszler D A 2003 J. phys. D: Appl. Phys. 36 L105

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    Pal B N, Trottman P, Sun J, Katz H E 2008 Adv. Funct. Mater. 18 1832

    [13]

    Lee D H, Chang Y J, Herman G S, Chang C H 2007 Adv. Mater. 19 843

    [14]

    Schneider J J, Hoffmann R C, Engstler J, Soffke O, Jaegermann W, Issanin A, Klyszcz A 2008 Adv. Mater. 20 3383

    [15]

    Jiao Y, Zhang X, Zhai J, Yu X, Ding L, Zhang W 2013 Electron. Mater. Lett. 9 279

    [16]

    Yabuta H, Kaji N, Hayashi R, Kumomi H, Nomura K, Kamiya T, Hosono H 2010 Appl. Phys. Lett. 97 072111

    [17]

    Kwon J Y, Son K S, Jung J S, Kim T S, Ryu M K, Park K B, Lee S Y 2008 IEEE Electron Device Lett. 29 1309

    [18]

    zgr , Alivov Y I, Liu C, Teke A, Reshchikov M, Doğan S, Morkoc H 2005 J. Appl. Phys. 98 041301

    [19]

    Usuda M, Hamada N, Kotani T, van Schilfgaarde M 2002 Phys. Rev. B 66 125101

    [20]

    Clark S J, Robertson J, Lany S, Zunger A 2010 Phys. Rev. B 81 115311

    [21]

    Boesen G F, Jacobs J E 1968 Proc. IEEE 56 2094

    [22]

    Fortunato E M, Barquinha P M, Pimentel A C M B G, Gonalves A M, Marques A J, Pereira L M, Martins R F 2005 Adv. Mater. 17 590

    [23]

    Lim S J, Kwon S J, Kim H, Park J S 2007 Appl. Phys. Lett. 91 183517

    [24]

    Lim S J, Kim J M, Kim D, Kwon S, Park J S, Kim H 2010 J. Electrochem. Soc. 157 H214

    [25]

    Tsukazaki A, Ohtomo A, Kawasaki M 2006 Appl. Phys. Lett. 88 152106

    [26]

    Ellmer K 2001 J. Phys. D: Appl. Phys. 34 3097

    [27]

    Zhang H, Cao H, Chen A, Liang L, Liu Z, Wan Q 2010 Solid-State Electron. 54 479

    [28]

    Zhang H Z, Liang L Y, Chen A H, Liu Z M, Yu Z, Cao H T, Wan Q 2010 Appl. Phys. Lett. 97 122108

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    Wang L, Yoon M, Lu G, Yang Y, Facchetti A, Marks T 2006 Nat. Mater. 5 893

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    Wang L, Yoon M H, Facchetti A, Marks T J 2007 Adv. Mater. 19 3252

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    Nayak P K, Hedhili M N, Cha D, Alshareef H N 2013 Appl. Phys. Lett. 103 033518

    [32]

    Presley R, Munsee C, Park C, Hong D, Wager J, Keszler D 2004 J. Phys. D: Appl. Phys. 37 2810

    [33]

    Lee D H, Chang Y J, Stickle W, Chang C H 2007 Electrochem. Solid-State Lett. 10 K51

    [34]

    Cheong W S, Yoon S M, Hwang C S, Chu H Y 2009 Jpn. J. Appl. Phys. 48 04C090

    [35]

    Jang J, Kitsomboonloha R, Swisher S, Park E, Kang H, Subramanian V 2013 Adv. Mater. 25 1042

    [36]

    Ueda N, Hosono H, Waseda R, Kawazoe H 1997 Appl. Phys. Lett. 71 933

    [37]

    Orita M, Ohta H, Hirano M, Hosono H 2000 Appl. Phys. Lett. 77 4166

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    [39]

    Matsuzaki K, Yanagi H, Kamiya T, Hiramatsu H, Nomura K, Hirano M, Hosono H 2006 Appl. Phys. Lett. 88 092106

    [40]

    Higashiwaki M, Sasaki K, Kuramata A, Masui T, Yamakoshi S 2012 Appl. Phys. Lett. 100 013504

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    Kwon J Y, Lee D J, Kim K B 2011 Electron. Mater. Lett. 7 1

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    Fortunato E, Barquinha P, Pimentel A, Pereira L, Gonalves G, Martins R 2007 Phys. Status. Soidil 1 R34

    [43]

    Park J C, Lee H N, Im S 2013 ACS Appl. Mater. Interfaces 5 6990

    [44]

    Oh S J, Han C J, Kim J W, Kim Y H, Park S K, Han J I, Kang J W, Oh M S 2011 Electrochem. Solid-State Lett. 14 H354

    [45]

    Heo J Y, Kim S B, Gorden R G 2012 Appl. Phys. Lett. 101 113507

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    Cheong W S, Shin J H, Chung S M, Hwang C S, Lee J M, Lee J H 2012 J. Nanosci. Nanotechnol. 12 3421

    [47]

    Kim Y H, Han J I, Park S K 2012 IEEE Electron Device Lett. 33 50

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    Zhao Y, Duan L, Dong G, Zhang D, Qiao J, Wang L, Qiu Y 2012 Langmuir 29 151

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    Rajachidambaram M S, Pandey A, Vilayurganapathy S, Nachimuthu P, Thevuthasan S, Herman G S 2013 Appl. Phys. Lett. 103 171602

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    Ha T J, Dodabalapur A 2013 Appl. Phys. Lett. 102 123506

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    Matsueda Y 2010 In Digest of International Transistor Conference Tokyo, Japan, January 28-29, 2010 p314

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    Lin Z, Lan L, Xiao P, Sun S, Li Y, Song W, Gao P, Peng J 2014 Appl. Phys. Lett. 105 142104

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Metrics
  • Abstract views:  10691
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Publishing process
  • Received Date:  06 February 2016
  • Accepted Date:  13 March 2016
  • Published Online:  05 June 2016

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