Preparation and magnetic anisotropy of NiFe film with stripe domains

Li Jin-Cai; Zhan Qing-Feng; Pan Min-Jie; Liu Lu-Ping; Yang Hua-Li; Xie Ya-Li; Xie Shu-Hong; Li Run-Wei

doi:10.7498/aps.65.217501

Abstract

Magnetic anisotropy is one of the most important fundamental properties of magnetic film.For the high-frequency applications,the magnetic anisotropy determines the ferromagnetic resonance frequency of magnetic film.Due to the directionality of conventional static magnetic anisotropy in magnetic film,the high-frequency device usually exhibits a remarkable angular dependent behavior.Only when the microwave magnetic field is perpendicular to the magnetic anisotropy,can the device work at the best performance.The magnetic film with a thickness beyond a critical value displays a stripe domain structure as well as an in-plane rotatable magnetic anisotropy,which can be an important strategy to solve the problem of magnetic field orientation dependent performance in high-frequency device.Thus, the fabrication,the magnetic anisotropy,the magnetic domain and the high-frequency behavior for magnetic film with stripe domain structure have received extensive attention.Previously,a lot of studies have qualitatively indicated that the different fabrication processes could change the critical thickness values of displaying stripe domains,the magnetic domains,and the magnetic anisotropies in many magnetic films.However,the quantitative investigation,especially regarding the magnetic anisotropy which determines the high-frequency behaviors of magnetic films,is less.NiFe alloys display excellent soft magnetic properties,which have been extensively applied to various spintronic devices.In addition, the stripe magnetic domain is discovered for the first time in NiFe film.In this work,we fabricate NiFe magnetic thin films by using radio frequency magnetron sputtering technique at room temperature and quantitatively study the effects of film thickness,sputtering power density and Ar pressure on the magnetic domain structure,in-plane static magnetic anisotropy,in-plane rotatable magnetic anisotropy and out-of-plane magnetic anisotropy.For NiFe films fabricated at a power density of 15.6 W/cm2 and an Ar pressure of 2 mTorr (1 Torr=1.33322102 Pa),the critical thickness values for the appearance of stripe domain structures in NiFe films are between 250 and 300 nm.The out-of-plane magnetic anisotropy field of 300 nm NiFe film is nearly twice as that of 250 nm NiFe film,which gives rise to the occurrence of stripe domain structure as well as the in-plane rotatable magnetic anisotropy.The high sputtering power density could reduce the critical thickness for the occurrence of stripe domains.For 300 nm NiFe film fabricated at a power density of 15.6 W/cm2,with Ar pressure increasing from 2 to 9 mTorr,the out-of-plane magnetic anisotropy field increases from 1247.8 to 3248.0 Oe (1 Oe=79.5775 A/m) and the in-plane rotatable magnetic anisotropy field increases from 72.5 to 141.9 Oe.Meanwhile,the stripe magnetic domain structure changes from well aligned to disordered state,and the corresponding wavelength of stripe domain is reduced from 0.53 to 0.24 m.The cross-sectional characterizations of NiFe film indicate that the formation of columnar structure produces an out-of-plane magnetic anisotropy,giving rise to the appearance of stripe magnetic domain structures.The low Ar pressure is in favor of the formation of columnar structure in magnetic film under the high sputtering power density,which gives rise to the appearance of well aligned stripe magnetic domains.However,the high Ar pressure leads to a fibrous columnar structure,which enhances the out-of-plane magnetic anisotropy and reduces the critical thickness for the occurrence of stripe domains.Our investigation provides an important reference to fabricating magnetic films and controlling their static and rotatable magnetic anisotropies for the application in high-frequency devices.

Keywords:

Authors and contacts

1.
Key Laboratory of Low Dimensional Materialsand Application Technology of Ministry of Education, Hunan Provincial Key Laboratory of Thin Film Materialsand Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2.
Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

Corresponding author: Zhan Qing-Feng, zhanqf@nimte.ac.cn;shxie@xtu.edu.cn ; Xie Shu-Hong, zhanqf@nimte.ac.cn;shxie@xtu.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China(Grant Nos. 11374312, 51525103, 51522105, 11372268), the National Key Technologies RD Program of China(Grant Nos. 2012CB933004, 2016YFA0201102), the Key Research Program of the Chinese Academy of Sciences(Grant No. KJZD-EWM05), the Science Fund for Distinguished Young Scholars of Hunan Province, China(Grant No. 13JJ1019), and the Ningbo Science and Technology Innovation Team, China(Grant No. 2015B11001).

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[8]	Wei J W, Zhu Z T, Feng H M, Du J L, Liu Q F, Wang J B 2015 J. Phys. D:Appl. Phys. 48 465001
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[16]	Chai G Z, Phuoc N N, Ong C K 2013 Appl. Phys. Lett. 103 042412
[17]	Zhou C, Wei W W, Jiang C J 2015 Appl. Phys. A. 121 39
[18]	Barturen M, Salles B R, Schio P, Milano J, Butera A, Bustingorry S, Ramos C, Oliveira A J A, Eddrief M, Lacaze E, Gendron F, Etgens V H, Marangolo M 2012 Appl. Phys. Lett. 101 092404
[19]	Fin S, Tomasello R, Bisero D, Marangolo M, Sacchi M, Popescu H, Eddrief M, Hepbum C, Finocchio G, Carpentieri M, Rettori A, Pini M G, Tacchi S 2015 Phys. Rev. B 92 224411
[20]	Sharma P, Kimura H, Inoue A, Arenholz E, Guo J H 2006 Phys. Rev. B 73 052401
[21]	álvarez N R, Montalbetti M E V, Gómez J E, Moya R A E, Vicente á M A, Goovaerts E, Butera A 2015 J. Phys. D:Appl. Phys. 48 405003
[22]	Yu J, Chang C H, Karns D, Ju G P, Kubota Y, Eppler W, Brucker C, Weller D 2002 J. Appl. Phys. 91 8357
[23]	Wang G X, Dong C H, Wang W X, Wang Z L, Chai G Z, Jiang C J, Xue D S 2012 J. Appl. Phys. 112 093907
[24]	Saito N, Fujiwara H, Sugita Y 1964 J. Phys. Soc. Jpn. 19 421
[25]	Gu W J, Pan J, Du W, Hu J G 2011 Acta Phys. Sin. 60 057601(in Chinese)[顾文娟, 潘靖, 杜薇, 胡经国2011物理学报60 057601]
[26]	Zhou C, Jiang C J, Zhao Z 2015 J. Phys. D:Appl. Phys. 48 265001
[27]	Zhan Q F, Vandezande S, Temst K, Haesendonck C V 2009 New J. Phys. 11 063003
[28]	Chen J, Erskine J L 1992 Phys. Rev. Lett. 68 1212

Cited By

[1]	Yu Y, Zhan Q F, Wei J W, Wang J B, Dai G H, Zuo Z H, Zhang X S, Liu Y W, Yang H L, Zhang Y, Xie S H, Wang B M, Li R W 2015 Appl. Phys. Lett. 106 162405
[2]	Li C Y, Chai G Z, Yang C C, Wang W F, Xue D S 2015 Sci. Rep. 5 17023
[3]	Nogués J, Schuller I K 1999 J. Magn. Magn. Mater. 192 203
[4]	Yoo J H, Restorff J B, Wun F M, Flatau A B 2008 J. Appl. Phys. 103 07B325
[5]	Acher O, Dubourg S 2008 Phys. Rev. B 77 104440
[6]	Perrin G, Acher O, Peuzin J C, Vukadinovic N 1996 J. Magn. Magn. Mater. 157-158 289
[7]	Iakubov I T, Lagarkov A N, Maklakov S A, Osipov A V, Rozanov K N, Ryzhikov I A, Starostenko S N 2006 J. Magn. Magn. Mater. 300 e74
[8]	Wei J W, Zhu Z T, Feng H M, Du J L, Liu Q F, Wang J B 2015 J. Phys. D:Appl. Phys. 48 465001
[9]	Chai G Z, Phuoc N N, Ong C K 2012 Sci. Rep. 2 832
[10]	Zhang Z D 2015 Acta Phys. Sin. 64 067503(in Chinese)[张志东2015物理学报64 067503]
[11]	Wang G X, Dong C H, Yan Z J, Wang T, Chai G Z, Jiang C J, Xue D S 2013 J. Alloys Compd. 573 118
[12]	Zhou C, Wang F L, Wei W W, Wang G X, Jiang C J, Xue D S 2013 J. Phys. D:Appl. Phys. 46 425002
[13]	Soh W T, Phuoc N N, Tan C Y, Ong C K 2013 J. Appl. Phys. 114 053908
[14]	Singh G, Rout P K, Porwal R, Budhani R C 2012 Appl. Phys. Lett. 101 022411
[15]	Chikazumi S 1997 Physics of Ferromagnetism (Vol. 6)(Oxford:Oxford University Press) p451
[16]	Chai G Z, Phuoc N N, Ong C K 2013 Appl. Phys. Lett. 103 042412
[17]	Zhou C, Wei W W, Jiang C J 2015 Appl. Phys. A. 121 39
[18]	Barturen M, Salles B R, Schio P, Milano J, Butera A, Bustingorry S, Ramos C, Oliveira A J A, Eddrief M, Lacaze E, Gendron F, Etgens V H, Marangolo M 2012 Appl. Phys. Lett. 101 092404
[19]	Fin S, Tomasello R, Bisero D, Marangolo M, Sacchi M, Popescu H, Eddrief M, Hepbum C, Finocchio G, Carpentieri M, Rettori A, Pini M G, Tacchi S 2015 Phys. Rev. B 92 224411
[20]	Sharma P, Kimura H, Inoue A, Arenholz E, Guo J H 2006 Phys. Rev. B 73 052401
[21]	álvarez N R, Montalbetti M E V, Gómez J E, Moya R A E, Vicente á M A, Goovaerts E, Butera A 2015 J. Phys. D:Appl. Phys. 48 405003
[22]	Yu J, Chang C H, Karns D, Ju G P, Kubota Y, Eppler W, Brucker C, Weller D 2002 J. Appl. Phys. 91 8357
[23]	Wang G X, Dong C H, Wang W X, Wang Z L, Chai G Z, Jiang C J, Xue D S 2012 J. Appl. Phys. 112 093907
[24]	Saito N, Fujiwara H, Sugita Y 1964 J. Phys. Soc. Jpn. 19 421
[25]	Gu W J, Pan J, Du W, Hu J G 2011 Acta Phys. Sin. 60 057601(in Chinese)[顾文娟, 潘靖, 杜薇, 胡经国2011物理学报60 057601]
[26]	Zhou C, Jiang C J, Zhao Z 2015 J. Phys. D:Appl. Phys. 48 265001
[27]	Zhan Q F, Vandezande S, Temst K, Haesendonck C V 2009 New J. Phys. 11 063003
[28]	Chen J, Erskine J L 1992 Phys. Rev. Lett. 68 1212

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Vol. 65, Issue 21 - 2016-11-05

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