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Resistive switching of molecular film incorporated with nanoparticles(NPs) has become a hot topic in the information storage industry, which is systematically reviewed from the aspects of electrodes, film structure, NPs, switching mechanism and mechanical properties. There are three sorts of structures i.e., layered, core-shell and complexed films, in which the film thickness affects the device charge transport and switching performance to a large extent. Usually, higher on/off ratio and lower threshold voltage can be expected for device with less-conductive active layers than that with more conductive ones. As a key factor, the interfaces of electrode/organic and molecule/NPs may largely affect the switching performance. It is shown that the type, size and distribution of NPs and molecular structure govern the interfacial behaviors, which in turn influences the switching mechanisms including filament formation/ rupture, charge trapping/ detrapping or charge transfer. For the case of filament theory, it may be ascribed to metallic, oxygen vacant or carbon-rich model. The as-embedded NPs can be classified as metal, metal oxide and/or carbon-like materials such as Au, Ag, Al, ZnO, TiO2, or graphene etc. The Au NPs show distinguishing features of little diameter, high chemical stability and large work function. On the other hand, the metal oxide NPs may form deep interfacial barrier with the target molecules and thus improve the switching characteristics. Small molecular-weight organics are also studied as embedding materials complexed with polymers as to strengthen the switching properties, and charge transfer is believed to be responsible for such an enhancement. Except for concentration and diameter of the NPs, their distribution in the active layer critically influences the memory behavior. The NPs can be made onto the molecular layer in-situ by vacuum thermal evaporation of different metals or sputtering deposition of various metal oxides. In such cases, the thickness of the deposition layer is a key parameter to obtain good switching performance. Although great progress has been made for static devices in small-scale, it is crucial to develop roll-to-roll manufacturing, precise NPs' distribution and dynamic mechanical properties in order to fabricate large-scale, low-cost and flexible memory devices. It still needs hard work on understanding the switching mechanism and engineering the interfacial properties of molecule/electrode and molecule/NPs, especially under bending conditions. New techniques should be developed to fabricate organic memory films embedded with NPs so as to avoid the problems of pinhole, effects of solvent and dust normally existing in traditional spin-coating films.
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Keywords:
- resistive switching /
- organic thin films /
- organic/inorganic interface /
- flexible electronics
[1] Dearnaley G, Morgan D V, Stoneham A M 1970 J. Non-Crystalline Solids 4 612
[2] Segui Y, Ai B, Carchano H 1976 J. Appl. Phys. 47 140
[3] Henisch H K, Meyers J A 1974 Appl. Phys. Lett. 24 589
[4] Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77
[5] Cho B, Kim T W, Choe M, Wang G, Song S, Lee T 2009 Organic Electron. 104 73
[6] Cho B G, Song S H, Ji Y S, Lee T 2010 Appl. Phys. Lett. 97 063305
[7] Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309
[8] Lee J D, Seung H M, Kwon K C, Park J G 2011 Curr. Appl. Phys. 11 e25
[9] Lee J D, Seung H M, Kwon K C, Park J G 2010 IEEE Conference on Network Infrastructure & Digital Content Chongqing, September 17-19, 2010 p409
[10] Bozano L D, Kean B W, Deline V R, Salem J R, Scott J C 2004 Appl. Phys. Lett. 84 607
[11] Ouyang J, Chu C W, Sieves D, Yang Y 2005 Appl. Phys. Lett. 86 123507
[12] Ouyang J 2015 J. Mater. Chem. C 3 7243
[13] Yun D Y, Song W S, Kim T W 2012 Appl. Phys. Lett. 5 103305
[14] Pan L, Ji Z, Yi X, Zhu X, Chen X, Shang J 2015 Adv. Funct. Mater. 25 2677
[15] Ramana C V V, Moodely M K, Kannan V, Maity A, Jayaramudu J, Clarke W 2012 Sensors & Actuators B:Chemical 161 684
[16] Yang Y S, Koo J B, You I K 2012 J. Korean Phys. Soc. 60 1504
[17] Son D I, Chan H Y, Kim W T, Jung J H, Kim T W 2009 Appl. Phys. Lett. 94 132103
[18] Dao T T, Tran T V, Higashimine K, Okada H, Mott D, Maenosono S, Murata H 2011 Appl. Phys. Lett. 99 233303
[19] Ko S H, Chan H Y, Kim T W 2012 J. Electrochem. Soc. 159 G93
[20] Chen S, Song R, Wang J, Zhao Z, Jie Z, Zhao Y, Quan B, Huang W, Liu S 2008 J. Lumin. 128 1143
[21] Park J G, Nam W S, Seo S H, Kim Y G, Oh Y H, Lee G S, Paik U G 2009 Nano Lett. 9 1713
[22] Nam W S, Seo S H, Park J G 2011 Electrochem. Solid State Lett. 14 H277
[23] Qu X P, Ding A L, Luo W G, Qiu P S, Chen X T 1996 J. Inorg. Mater. 11 499 (in Chinese)[屈新萍, 丁爱丽, 罗维根, 仇萍荪, 陈先同1996无机材料学报11 499]
[24] Lai P Y, Chen J S 2007 Acta Phys. Chim. Sin. 23 1821
[25] Capitán M J, álvarez J, Navío C, Miranda R 2016 J. Phys. Condens. Matter 28 185002
[26] Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[27] Ma L, Xu Q, Yang Y 2004 Appl. Phys. Lett. 84 4908
[28] Kim Y, Yoo D, Jang J, Song Y, Jeong H, Cho K, Hwang W T, Lee W, Kim T W, Lee T 2016 Organic Electron. 33 48
[29] Mukherjee B, Pal A J 2006 Organic Electron. 7 249
[30] Ha H J, Lee J M, Kim M, Kim O 2008 Adv. Sci. Technol. 54 470
[31] Ha H J, Kim O 2013 Organic Electron. 14 979
[32] Park K K, Jung J H, Kim T W 2011 Appl. Phys. Lett. 98 193301
[33] He P, Ye C, Deng T F, Wu J J, Zhang J C, Wang H 2016 Chin. J. Rare Metals 40 236 （in Chinese)[何品, 叶葱, 邓腾飞, 吴加吉, 张骏驰, 王浩2016稀有金属40 236]
[34] Shim J H, Jung J H, Min H L, Kim T W, Son D I, Han A N, Kim S W 2011 Organic Electron. 12 1566
[35] Lin H T, Pei Z, Chan Y J 2007 IEEE Electron Dev. Lett. 28 569
[36] Lin H T, Pei Z, Chen J R, Hwang G W, Fan J F, Chan Y J 2007 IEEE Electron Dev. Lett. 28 951
[37] Jung J H, Kim J H, Kim T W, Song M S, Kim Y H, Jin S 2006 Appl. Phys. Lett. 89 122110
[38] Yook K S, Jeon S O, Joo C W, Lee J Y, Kim S H, Jang J 2009 Organic Electron. 10 48
[39] Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[40] Dong U L, Kim E K, Cho W J, Kim Y H 2011 Appl. Phys. A 102 933
[41] Tseng Z L, Kao P C, Shih M F, Huang H H, Wang J Y, Chu S Y 2010 Appl. Phys. Lett. 97 212103
[42] Shi Q, Xu J, Wu Y, Wang Y, Wang X, Hong Y, Jiang L, Li L 2014 Phys. Lett. A 378 3544
[43] Ouyang J, Chu C W, Szmanda C R, Ma L P, Yang Y 2005 Nature Mater. 3 918
[44] Joo W J, Choi T L, Lee J, Lee S K, Jung M S, Kim N, Kim J M 2006 J. Phys. Chem. B 110 23812
[45] Kondo T, Sang M L, Malicki M, Domercq B, Marder S R, Kippelen B 2008 Adv. Funct. Mater. 18 1112
[46] Xie X Y 2015 M. S. Dissertation (Beijing:Beijing Jiaotong University)（in Chinese)[谢小漪2015硕士学位论文(北京:北京交通大学)]
[47] Zhao Y X 2007 M. S. Dissertation（Changchun:Jilin University)（in Chinese)[赵昳昕2007硕士学位论文(长春:吉林大学)]
[48] Chi J Y 2014 M. S. Dissertation (Kaifeng:Henan University)（in Chinese)[赤建玉2014硕士学位论文(开封:河南大学)]
[49] Dong W 2008 M. S. Dissertation (Harbin:Harbin University of Science and Technology)（in Chinese)[董伟2008硕士学位论文(哈尔滨:哈尔滨理工大学)]
[50] Wu Z W, Liu Y, Wei S J, Huang X, Zhang D Y, Zhou M, Chen L W, Ma C Q, Wang H 2013 Acta Phys. Chim. Sin. 8 1735
[51] Jung J H, Jin J Y, Lee I, Kim T W, Roh H G, Kim Y H 2006 Appl. Phys. Lett. 88 112107
[52] Salaoru I, Paul S 2009 Philosoph. Trans. Roy. Soc. A:Math. Phys. Engineer. Sci. 367 4227
[53] Xu G Q 2012 M. S. Dissertation (Harbin:Heilongjiang University)（in Chinese)[徐国强2012硕士学位论文(哈尔滨:黑龙江大学)]
[54] Manzoor K, Vadera S R, Kumar N, Kutty T R N 2004 Solid State Commun. 129 469
[55] Xiong Y L 2012 Ph. D. Dissertation (Wuhan:Wuhan University of technology)（in Chinese)[熊远禄2012博士学位论文(武汉:武汉理工大学)]
[56] Ma X D 2013 M. S. Dissertation （Ningxia:Ningxia University)（in Chinese)[马晓东2013硕士学位论文(宁夏:宁夏大学)]
[57] Tian G, Wu D, Shi L, Qi S, Wu Z 2012 Rsc Adv. 2 9846
[58] Chen F 2008 M. S. Dissertation (Suzhou:Suzhou University)（in Chinese)[陈芬2008硕士学位论文(苏州:苏州大学)]
[59] Cui H W, Du G B 2008 Chem. Adh. 30 48
[60] Ling H F, Han Y, Yi M D, Yang T Fan, Qu L, Xie L H, Huang W 2015 Chin. Sci. Bull. 60 2404
[61] Wu C, Li F, Guo T 2014 Appl. Phys. Lett. 104 183105
[62] Li H R, Zhang F J, Zheng D S 2003 Chin. J. Lumin. 24 44 （in Chinese)[李海蓉, 张福甲, 郑代顺2003发光学报24 44]
[63] Kao P C, Liu C C, Li T Y 2015 Organic Electron. 21 203
[64] Li W L 2015 M. S. Dissertation（Taiyuan:Taiyuan University of Technology)（in Chinese)[李菀丽2015硕士学位论文(太原:太原理工大学)]
[65] Ouyang J, Chu C W, Tseng J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287
[66] Nam W S, Seo S H, Park K H, Hong S H, Lee G S, Park J G 2010 Curr. Appl. Phys. 10 e37
[67] Senthilkumar V, Kim Y S 2015 Trans. Electr. Election. Mater. 16 290
[68] Ling Q D, Lim S L, Song Y, Zhu C X, Chan D S, Kang E T, Neoh K G 2007 Langmuir 23 312
[69] Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[70] Zhao L C, Wu L L, Liu W K, Zhang H Q 2010 The 8th National Symposium on Electronic Process in Organic Solids Xi'an, China June 14-17, 2010 p307
[71] Zhao S L, Kan P Z, Xu Z, Kong C, Wang D W, Yan Y, Wang Y S 2010 Organic Electron. 11 789
[72] Li F, Son D I, Cha H M, Seo S M, Kim B J, Kim H J, Jung J H, Kim T W 2007 Appl. Phys. Lett. 90 222109
[73] Lai P Y, Chen J S 2009 Organic Electron. 10 1590
[74] Han Y, Wu G, Chen H, Wang M 2008 J. Appl. Polymer Sci. 109 882
[75] Hao Y Z, Cai C L 2006 J. Funct. Mater. 37 22 (in Chinese)[郝彦忠, 蔡春立2006功能材料37 22]
[76] Liu M H 2013 M. S. Dissertation (Shanghai:Tongji University)（in Chinese)[刘满华2013硕士学位论文(上海:同济大学)]
[77] Hu Y S 2013 Ph. D. Dissertation (Changchun:University of Chinese Academy of Science)（in Chinese)[胡永生2013博士学位论文(长春:中国科学院大学)]
[78] Onlaor K, Thiwawong T, Tunhoo B 2014 Organic Electron. 15 1254
[79] Ramana C V, Moodley M K, Kannan V, Maity A 2013 Solid-State Electron. 81 45
[80] Liu X, Ji Z, Shang L, Wang H, Chen Y, Han M, Lu C, Liu M, Chen J 2011 IEEE Electron Dev. Lett. 32 1140
[81] Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304
[82] Reddy V S, Karak S, Ray S K, Dhar A 2009 Organic Electron. 65 138
[83] Bao Q Y, Yang J P, Li Y Q, Tang J X 2010 Appl. Phys. Lett. 97 063303
[84] Verbakel F, Meskers S C J, Leeuw D M D, Janssen R A J 2008 J. Phys. Chem. C 112 5254
[85] Sun Y, Li L, Wen D, Bai X 2015 Organic Electron. 25 283
[86] Yue D, Cui R, Ruan X, Huang H, Guo X, Wang Z, Gao X, Yang S, Dong J, Yi F, Sun B 2014 Organic Electron. 15 3482
[87] Gong X 2014 M. D. Dissertation (Shenyang:Northeastern University)（in Chinese)[宫兴2014硕士学位论文(沈阳:东北大学)]
[88] Song Y, Ling Q D, Lim S L, Teo E Y H, Tan Y P, Li L, Kang E T, Chan D S H, Zhu C 2007 IEEE Electron Dev. Lett. 28 107
[89] Son D I, Park D H, Choi W K, Cho S H, Kim W T, Kim T W 2009 Nanotechnology 20 112
[90] Son D I, You C H, Jung J H, Kim T W 2007 Adv. Mater. 19 4172
[91] Xie W, Li Y, Sun W, Huang J, Xie H, Zhao X 2010 J. Photochem. Photobiol. A:Chemistry 216 149
[92] Lin C W, Pan T S, Chen M C, Yang Y J, Tai Y, Chen Y F 2011 Appl. Phys. Lett. 99 023303
[93] Lai Y S, Tu C H, Kwong D L, Chen J S 2005 Appl. Phys. Lett. 87 122101
[94] Lin H T, Lin C Y, Pei Z, Chen J R, Chan Y J, Yeh Y H, Wu C C 2011 Organic Electron. 12 1632
[95] Li C F, Fu X H, Li L R, Zhao H C 2014 Micronanoelectr. Technol. 51 24 （in Chinese)[李丛飞, 傅兴华, 李良荣, 赵海臣2014材料与结构51 24]
[96] Chen Y C, Su Y K, Huang C Y, Yu H C, Cheng C Y, Chang T H 2011 Appl. Phys. Express 4 054204
[97] Cölle M, Büchel M, Leeuw D M D 2006 Organic Electron. 7 305
[98] Ooi P C, Aw K C, Razak K A, Makhsin S R, Gao W 2012 Microelectr. Engineer. 98 74
[99] Chen J, Ma D 2006 J. Appl. Phys. 100 034512
[100] Paul S, Kanwal A, Chhowalla M 2005 Nanotechnology 17 145
[101] Sleiman A, Mabrook M F, Nejm R R, Ayesh A, Ghaferi A, Petty M C, Zeze D A 2012 J. Appl. Phys. 112 24509
[102] Chan H Y, Jung J H, Jin K K, Kim T W 2011 Curr. Appl. Phys. 11 e40
[103] Bohnenbuck B, Hauff E V, Parisi J, Deibel C, Dyakonov V 2006 J. Appl. Phys. 99 024506
[104] Ouyang J 2015 J. Mater. Chem. C 3 7243
[105] Ouyang J 2013 Organic Electron. 14 1458
[106] Liu G, Zhuang X, Chen Y, Zhang B, Zhu J, Zhu C X, Neoh K G, Kang E T 2009 Appl. Phys. Lett. 95 253301
[107] Chung I, Cho K, Yun J, Kim S 2012 Microelectr. Engineer. 97 122
[108] Wang Z Q, Xu H Y, Li X H, Zhang X T, Liu Y X, Liu Y C 2011 IEEE Electron Dev. Lett. 32 1442
[109] Kim S, Moon H, Gupta D, Yoo S, Choi Y K 2009 IEEE Transa. Electron Dev. 56 696
[110] Xu W, Lu T J 2008 Adv. Mech. 38 137
[111] Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[112] Mohammed D W, Waddingham R, Flewitt A J, Sierros K A, Bowen J, Kukureka S N 2015 Thin Solid Films 594 197
[113] Gao W, Zhou B, Liu Y, Ma X, Liu Y, Wang Z, Zhu Y 2003 J. Appl. Polymer Sci. 89 2224
[114] Choi H R, Eswaran S K, Lee S M, Cho Y S 2015 Acs Appl. Mater. Interfaces 7 17569
[115] Yong U J, Oh S I, Choa S H, Kim H K, Kang S J 2013 Curr. Appl. Phys. 13 1331
[116] Tseng Z L, Tsai Y C, Wu S, Juang Y D, Chu S Y 2013 Appl. Phys. A:Mater. Sci. Proc. 112 495
[117] Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[118] Song S, Cho B, Kim T, Ji Y, Jo M, Wang G, Choe M, Kahng Y H, Hwang H, Lee T 2010 Adv. Mater. 22 5048
[119] Yan Y, Huang L B, Zhou Y, Han S T, Zhou L, Zhuang J, Xu Z X, Roy V A L 2015 Sci. Reports 5 15770
[120] Dong H, Kervran Y, Coulon N, Sagazan O D, Jacques E, Brahim T M 2015 IEEE Trans. Electron Dev. 62 3278
[121] Fan X, Wang J, Wang H, Liu X, Wang H, Liu X, Wang H 2015 Acs Appl. Mater. Interfaces 7 16287
[122] Mahajan A, Hyun W J, Walker S B, Lewis J A, Francis L F, Frisbie C D 2015 Acs Appl. Mater. Interfaces 7 1841
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[1] Dearnaley G, Morgan D V, Stoneham A M 1970 J. Non-Crystalline Solids 4 612
[2] Segui Y, Ai B, Carchano H 1976 J. Appl. Phys. 47 140
[3] Henisch H K, Meyers J A 1974 Appl. Phys. Lett. 24 589
[4] Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77
[5] Cho B, Kim T W, Choe M, Wang G, Song S, Lee T 2009 Organic Electron. 104 73
[6] Cho B G, Song S H, Ji Y S, Lee T 2010 Appl. Phys. Lett. 97 063305
[7] Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309
[8] Lee J D, Seung H M, Kwon K C, Park J G 2011 Curr. Appl. Phys. 11 e25
[9] Lee J D, Seung H M, Kwon K C, Park J G 2010 IEEE Conference on Network Infrastructure & Digital Content Chongqing, September 17-19, 2010 p409
[10] Bozano L D, Kean B W, Deline V R, Salem J R, Scott J C 2004 Appl. Phys. Lett. 84 607
[11] Ouyang J, Chu C W, Sieves D, Yang Y 2005 Appl. Phys. Lett. 86 123507
[12] Ouyang J 2015 J. Mater. Chem. C 3 7243
[13] Yun D Y, Song W S, Kim T W 2012 Appl. Phys. Lett. 5 103305
[14] Pan L, Ji Z, Yi X, Zhu X, Chen X, Shang J 2015 Adv. Funct. Mater. 25 2677
[15] Ramana C V V, Moodely M K, Kannan V, Maity A, Jayaramudu J, Clarke W 2012 Sensors & Actuators B:Chemical 161 684
[16] Yang Y S, Koo J B, You I K 2012 J. Korean Phys. Soc. 60 1504
[17] Son D I, Chan H Y, Kim W T, Jung J H, Kim T W 2009 Appl. Phys. Lett. 94 132103
[18] Dao T T, Tran T V, Higashimine K, Okada H, Mott D, Maenosono S, Murata H 2011 Appl. Phys. Lett. 99 233303
[19] Ko S H, Chan H Y, Kim T W 2012 J. Electrochem. Soc. 159 G93
[20] Chen S, Song R, Wang J, Zhao Z, Jie Z, Zhao Y, Quan B, Huang W, Liu S 2008 J. Lumin. 128 1143
[21] Park J G, Nam W S, Seo S H, Kim Y G, Oh Y H, Lee G S, Paik U G 2009 Nano Lett. 9 1713
[22] Nam W S, Seo S H, Park J G 2011 Electrochem. Solid State Lett. 14 H277
[23] Qu X P, Ding A L, Luo W G, Qiu P S, Chen X T 1996 J. Inorg. Mater. 11 499 (in Chinese)[屈新萍, 丁爱丽, 罗维根, 仇萍荪, 陈先同1996无机材料学报11 499]
[24] Lai P Y, Chen J S 2007 Acta Phys. Chim. Sin. 23 1821
[25] Capitán M J, álvarez J, Navío C, Miranda R 2016 J. Phys. Condens. Matter 28 185002
[26] Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[27] Ma L, Xu Q, Yang Y 2004 Appl. Phys. Lett. 84 4908
[28] Kim Y, Yoo D, Jang J, Song Y, Jeong H, Cho K, Hwang W T, Lee W, Kim T W, Lee T 2016 Organic Electron. 33 48
[29] Mukherjee B, Pal A J 2006 Organic Electron. 7 249
[30] Ha H J, Lee J M, Kim M, Kim O 2008 Adv. Sci. Technol. 54 470
[31] Ha H J, Kim O 2013 Organic Electron. 14 979
[32] Park K K, Jung J H, Kim T W 2011 Appl. Phys. Lett. 98 193301
[33] He P, Ye C, Deng T F, Wu J J, Zhang J C, Wang H 2016 Chin. J. Rare Metals 40 236 （in Chinese)[何品, 叶葱, 邓腾飞, 吴加吉, 张骏驰, 王浩2016稀有金属40 236]
[34] Shim J H, Jung J H, Min H L, Kim T W, Son D I, Han A N, Kim S W 2011 Organic Electron. 12 1566
[35] Lin H T, Pei Z, Chan Y J 2007 IEEE Electron Dev. Lett. 28 569
[36] Lin H T, Pei Z, Chen J R, Hwang G W, Fan J F, Chan Y J 2007 IEEE Electron Dev. Lett. 28 951
[37] Jung J H, Kim J H, Kim T W, Song M S, Kim Y H, Jin S 2006 Appl. Phys. Lett. 89 122110
[38] Yook K S, Jeon S O, Joo C W, Lee J Y, Kim S H, Jang J 2009 Organic Electron. 10 48
[39] Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[40] Dong U L, Kim E K, Cho W J, Kim Y H 2011 Appl. Phys. A 102 933
[41] Tseng Z L, Kao P C, Shih M F, Huang H H, Wang J Y, Chu S Y 2010 Appl. Phys. Lett. 97 212103
[42] Shi Q, Xu J, Wu Y, Wang Y, Wang X, Hong Y, Jiang L, Li L 2014 Phys. Lett. A 378 3544
[43] Ouyang J, Chu C W, Szmanda C R, Ma L P, Yang Y 2005 Nature Mater. 3 918
[44] Joo W J, Choi T L, Lee J, Lee S K, Jung M S, Kim N, Kim J M 2006 J. Phys. Chem. B 110 23812
[45] Kondo T, Sang M L, Malicki M, Domercq B, Marder S R, Kippelen B 2008 Adv. Funct. Mater. 18 1112
[46] Xie X Y 2015 M. S. Dissertation (Beijing:Beijing Jiaotong University)（in Chinese)[谢小漪2015硕士学位论文(北京:北京交通大学)]
[47] Zhao Y X 2007 M. S. Dissertation（Changchun:Jilin University)（in Chinese)[赵昳昕2007硕士学位论文(长春:吉林大学)]
[48] Chi J Y 2014 M. S. Dissertation (Kaifeng:Henan University)（in Chinese)[赤建玉2014硕士学位论文(开封:河南大学)]
[49] Dong W 2008 M. S. Dissertation (Harbin:Harbin University of Science and Technology)（in Chinese)[董伟2008硕士学位论文(哈尔滨:哈尔滨理工大学)]
[50] Wu Z W, Liu Y, Wei S J, Huang X, Zhang D Y, Zhou M, Chen L W, Ma C Q, Wang H 2013 Acta Phys. Chim. Sin. 8 1735
[51] Jung J H, Jin J Y, Lee I, Kim T W, Roh H G, Kim Y H 2006 Appl. Phys. Lett. 88 112107
[52] Salaoru I, Paul S 2009 Philosoph. Trans. Roy. Soc. A:Math. Phys. Engineer. Sci. 367 4227
[53] Xu G Q 2012 M. S. Dissertation (Harbin:Heilongjiang University)（in Chinese)[徐国强2012硕士学位论文(哈尔滨:黑龙江大学)]
[54] Manzoor K, Vadera S R, Kumar N, Kutty T R N 2004 Solid State Commun. 129 469
[55] Xiong Y L 2012 Ph. D. Dissertation (Wuhan:Wuhan University of technology)（in Chinese)[熊远禄2012博士学位论文(武汉:武汉理工大学)]
[56] Ma X D 2013 M. S. Dissertation （Ningxia:Ningxia University)（in Chinese)[马晓东2013硕士学位论文(宁夏:宁夏大学)]
[57] Tian G, Wu D, Shi L, Qi S, Wu Z 2012 Rsc Adv. 2 9846
[58] Chen F 2008 M. S. Dissertation (Suzhou:Suzhou University)（in Chinese)[陈芬2008硕士学位论文(苏州:苏州大学)]
[59] Cui H W, Du G B 2008 Chem. Adh. 30 48
[60] Ling H F, Han Y, Yi M D, Yang T Fan, Qu L, Xie L H, Huang W 2015 Chin. Sci. Bull. 60 2404
[61] Wu C, Li F, Guo T 2014 Appl. Phys. Lett. 104 183105
[62] Li H R, Zhang F J, Zheng D S 2003 Chin. J. Lumin. 24 44 （in Chinese)[李海蓉, 张福甲, 郑代顺2003发光学报24 44]
[63] Kao P C, Liu C C, Li T Y 2015 Organic Electron. 21 203
[64] Li W L 2015 M. S. Dissertation（Taiyuan:Taiyuan University of Technology)（in Chinese)[李菀丽2015硕士学位论文(太原:太原理工大学)]
[65] Ouyang J, Chu C W, Tseng J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287
[66] Nam W S, Seo S H, Park K H, Hong S H, Lee G S, Park J G 2010 Curr. Appl. Phys. 10 e37
[67] Senthilkumar V, Kim Y S 2015 Trans. Electr. Election. Mater. 16 290
[68] Ling Q D, Lim S L, Song Y, Zhu C X, Chan D S, Kang E T, Neoh K G 2007 Langmuir 23 312
[69] Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[70] Zhao L C, Wu L L, Liu W K, Zhang H Q 2010 The 8th National Symposium on Electronic Process in Organic Solids Xi'an, China June 14-17, 2010 p307
[71] Zhao S L, Kan P Z, Xu Z, Kong C, Wang D W, Yan Y, Wang Y S 2010 Organic Electron. 11 789
[72] Li F, Son D I, Cha H M, Seo S M, Kim B J, Kim H J, Jung J H, Kim T W 2007 Appl. Phys. Lett. 90 222109
[73] Lai P Y, Chen J S 2009 Organic Electron. 10 1590
[74] Han Y, Wu G, Chen H, Wang M 2008 J. Appl. Polymer Sci. 109 882
[75] Hao Y Z, Cai C L 2006 J. Funct. Mater. 37 22 (in Chinese)[郝彦忠, 蔡春立2006功能材料37 22]
[76] Liu M H 2013 M. S. Dissertation (Shanghai:Tongji University)（in Chinese)[刘满华2013硕士学位论文(上海:同济大学)]
[77] Hu Y S 2013 Ph. D. Dissertation (Changchun:University of Chinese Academy of Science)（in Chinese)[胡永生2013博士学位论文(长春:中国科学院大学)]
[78] Onlaor K, Thiwawong T, Tunhoo B 2014 Organic Electron. 15 1254
[79] Ramana C V, Moodley M K, Kannan V, Maity A 2013 Solid-State Electron. 81 45
[80] Liu X, Ji Z, Shang L, Wang H, Chen Y, Han M, Lu C, Liu M, Chen J 2011 IEEE Electron Dev. Lett. 32 1140
[81] Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304
[82] Reddy V S, Karak S, Ray S K, Dhar A 2009 Organic Electron. 65 138
[83] Bao Q Y, Yang J P, Li Y Q, Tang J X 2010 Appl. Phys. Lett. 97 063303
[84] Verbakel F, Meskers S C J, Leeuw D M D, Janssen R A J 2008 J. Phys. Chem. C 112 5254
[85] Sun Y, Li L, Wen D, Bai X 2015 Organic Electron. 25 283
[86] Yue D, Cui R, Ruan X, Huang H, Guo X, Wang Z, Gao X, Yang S, Dong J, Yi F, Sun B 2014 Organic Electron. 15 3482
[87] Gong X 2014 M. D. Dissertation (Shenyang:Northeastern University)（in Chinese)[宫兴2014硕士学位论文(沈阳:东北大学)]
[88] Song Y, Ling Q D, Lim S L, Teo E Y H, Tan Y P, Li L, Kang E T, Chan D S H, Zhu C 2007 IEEE Electron Dev. Lett. 28 107
[89] Son D I, Park D H, Choi W K, Cho S H, Kim W T, Kim T W 2009 Nanotechnology 20 112
[90] Son D I, You C H, Jung J H, Kim T W 2007 Adv. Mater. 19 4172
[91] Xie W, Li Y, Sun W, Huang J, Xie H, Zhao X 2010 J. Photochem. Photobiol. A:Chemistry 216 149
[92] Lin C W, Pan T S, Chen M C, Yang Y J, Tai Y, Chen Y F 2011 Appl. Phys. Lett. 99 023303
[93] Lai Y S, Tu C H, Kwong D L, Chen J S 2005 Appl. Phys. Lett. 87 122101
[94] Lin H T, Lin C Y, Pei Z, Chen J R, Chan Y J, Yeh Y H, Wu C C 2011 Organic Electron. 12 1632
[95] Li C F, Fu X H, Li L R, Zhao H C 2014 Micronanoelectr. Technol. 51 24 （in Chinese)[李丛飞, 傅兴华, 李良荣, 赵海臣2014材料与结构51 24]
[96] Chen Y C, Su Y K, Huang C Y, Yu H C, Cheng C Y, Chang T H 2011 Appl. Phys. Express 4 054204
[97] Cölle M, Büchel M, Leeuw D M D 2006 Organic Electron. 7 305
[98] Ooi P C, Aw K C, Razak K A, Makhsin S R, Gao W 2012 Microelectr. Engineer. 98 74
[99] Chen J, Ma D 2006 J. Appl. Phys. 100 034512
[100] Paul S, Kanwal A, Chhowalla M 2005 Nanotechnology 17 145
[101] Sleiman A, Mabrook M F, Nejm R R, Ayesh A, Ghaferi A, Petty M C, Zeze D A 2012 J. Appl. Phys. 112 24509
[102] Chan H Y, Jung J H, Jin K K, Kim T W 2011 Curr. Appl. Phys. 11 e40
[103] Bohnenbuck B, Hauff E V, Parisi J, Deibel C, Dyakonov V 2006 J. Appl. Phys. 99 024506
[104] Ouyang J 2015 J. Mater. Chem. C 3 7243
[105] Ouyang J 2013 Organic Electron. 14 1458
[106] Liu G, Zhuang X, Chen Y, Zhang B, Zhu J, Zhu C X, Neoh K G, Kang E T 2009 Appl. Phys. Lett. 95 253301
[107] Chung I, Cho K, Yun J, Kim S 2012 Microelectr. Engineer. 97 122
[108] Wang Z Q, Xu H Y, Li X H, Zhang X T, Liu Y X, Liu Y C 2011 IEEE Electron Dev. Lett. 32 1442
[109] Kim S, Moon H, Gupta D, Yoo S, Choi Y K 2009 IEEE Transa. Electron Dev. 56 696
[110] Xu W, Lu T J 2008 Adv. Mech. 38 137
[111] Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[112] Mohammed D W, Waddingham R, Flewitt A J, Sierros K A, Bowen J, Kukureka S N 2015 Thin Solid Films 594 197
[113] Gao W, Zhou B, Liu Y, Ma X, Liu Y, Wang Z, Zhu Y 2003 J. Appl. Polymer Sci. 89 2224
[114] Choi H R, Eswaran S K, Lee S M, Cho Y S 2015 Acs Appl. Mater. Interfaces 7 17569
[115] Yong U J, Oh S I, Choa S H, Kim H K, Kang S J 2013 Curr. Appl. Phys. 13 1331
[116] Tseng Z L, Tsai Y C, Wu S, Juang Y D, Chu S Y 2013 Appl. Phys. A:Mater. Sci. Proc. 112 495
[117] Son D I, Kim T W, Shim J H, Jung J H, Lee D U, Lee J M, Park W I, Choi W K 2010 Nano Lett. 10 2441
[118] Song S, Cho B, Kim T, Ji Y, Jo M, Wang G, Choe M, Kahng Y H, Hwang H, Lee T 2010 Adv. Mater. 22 5048
[119] Yan Y, Huang L B, Zhou Y, Han S T, Zhou L, Zhuang J, Xu Z X, Roy V A L 2015 Sci. Reports 5 15770
[120] Dong H, Kervran Y, Coulon N, Sagazan O D, Jacques E, Brahim T M 2015 IEEE Trans. Electron Dev. 62 3278
[121] Fan X, Wang J, Wang H, Liu X, Wang H, Liu X, Wang H 2015 Acs Appl. Mater. Interfaces 7 16287
[122] Mahajan A, Hyun W J, Walker S B, Lewis J A, Francis L F, Frisbie C D 2015 Acs Appl. Mater. Interfaces 7 1841
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