Two-dimensional hexagonal boron nitride based memristor

Wu Quan-Tan; Shi Tuo; Zhao Xiao-Long; Zhang Xu-Meng; Wu Fa-Cai; Cao Rong-Rong; Long Shi-Bing; Lü Hang-Bing; Liu Qi; Liu Ming

doi:10.7498/aps.66.217304

Abstract

Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.

Keywords:

Authors and contacts

1.
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Liu Qi, liuqi@ime.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61422407, 61474136, 61334007, 61404164, 61574166, 61522408), the National Key RD Program of China (Grant Nos. 2017YFB0405603, 2016YFA0201803), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDPB0603).

References

[1]	Prakash A, Maikap S, Lai C S, Lee H Y, Chen W S, Chen F T, Tsai M J 2012 Jpn. J. Appl. Phys. 51 04DD06
[2]	Lee H Y, Chen Y S, Chen P S, Wu T Y, Chen F, Wang C C, Tzeng P J, Tsai M J, Lien C 2010 IEEE Electron Dev. Lett. 31 44
[3]	Su S, Jian X C, Wang F, Han Y M, Tian Y X, Wang X Y, Zhang H Z, Zhang K L 2016 Chin. Phys. B 25 107302
[4]	Tan T, Guo T, Wu Z, Liu Z 2016 Chin. Phys. B 25 117306
[5]	Gao X P, Fu L P, Chen C B, Yuan P, Li Y T 2016 Chin. Phys. B 25 106102
[6]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H, Hwang C S 2010 Nanotechnology 21 195201
[7]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[10]	Shi T, Yin X B, Yang R, Guo X 2016 Phys. Chem. Chem. Phys. 18 9338
[11]	Zhao J W, Liu F J, Huang H Q, Hu Z F, Zhang X Q 2012 Chin. Phys. B 21 065201
[12]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114
[13]	Shi T, Wu J F, Liu Y, Yang R, Guo X 2017 Adv. Electron. Mater. 3 1700046
[14]	Yao J, Lin J, Dai Y H, Ruan G D, Yan Z, Li L, Zhong L, Natelson D, Tour J M 2012 Nat. Commun. 3 1101
[15]	Liu S, Lu N, Zhao X, Xu H, Banerjee W, L H, Long S, Li Q, Liu Q, Liu M 2016 Adv. Mater. 28 10623
[16]	Hong S K, Kim J E, Kim S O, Cho B J 2011 J. Appl. Phys. 110 044506
[17]	Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C 2015 Nat. Nanotech. 10 403
[18]	Park S, Lee J, Kim H S, Park J B, Lee K H, Han S A, Hwang S, Kim S W, Shin H J 2015 ACS Nano 9 633
[19]	Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W 2016 Small 12 2942
[20]	Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, Lee P S 2016 Adv. Funct. Mater. 26 2176
[21]	Puglisi F M, Larcher L, Pan C, Xiao N, Shi Y, Hui F, Lanza M 2016 2016 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA, December 3-7, 2016 p6651209
[22]	Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Boldberg B B, Ruoff R S 2011 ACS Nano 5 6916
[23]	Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng X M 2017 Small 13 1604179
[24]	Song L, Ci L, Lu H, Sorokin P B, Jin C, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I, Ajayan P M 2010 Nano Lett. 10 3209
[25]	Shi Y, Hamsen C, Jia X, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H, Juang Z Y, Dresselhaus M S, Li L J, Kong J 2010 Nano Lett. 10 4134
[26]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[27]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297

Cited By

[1]	Prakash A, Maikap S, Lai C S, Lee H Y, Chen W S, Chen F T, Tsai M J 2012 Jpn. J. Appl. Phys. 51 04DD06
[2]	Lee H Y, Chen Y S, Chen P S, Wu T Y, Chen F, Wang C C, Tzeng P J, Tsai M J, Lien C 2010 IEEE Electron Dev. Lett. 31 44
[3]	Su S, Jian X C, Wang F, Han Y M, Tian Y X, Wang X Y, Zhang H Z, Zhang K L 2016 Chin. Phys. B 25 107302
[4]	Tan T, Guo T, Wu Z, Liu Z 2016 Chin. Phys. B 25 117306
[5]	Gao X P, Fu L P, Chen C B, Yuan P, Li Y T 2016 Chin. Phys. B 25 106102
[6]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H, Hwang C S 2010 Nanotechnology 21 195201
[7]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[10]	Shi T, Yin X B, Yang R, Guo X 2016 Phys. Chem. Chem. Phys. 18 9338
[11]	Zhao J W, Liu F J, Huang H Q, Hu Z F, Zhang X Q 2012 Chin. Phys. B 21 065201
[12]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114
[13]	Shi T, Wu J F, Liu Y, Yang R, Guo X 2017 Adv. Electron. Mater. 3 1700046
[14]	Yao J, Lin J, Dai Y H, Ruan G D, Yan Z, Li L, Zhong L, Natelson D, Tour J M 2012 Nat. Commun. 3 1101
[15]	Liu S, Lu N, Zhao X, Xu H, Banerjee W, L H, Long S, Li Q, Liu Q, Liu M 2016 Adv. Mater. 28 10623
[16]	Hong S K, Kim J E, Kim S O, Cho B J 2011 J. Appl. Phys. 110 044506
[17]	Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C 2015 Nat. Nanotech. 10 403
[18]	Park S, Lee J, Kim H S, Park J B, Lee K H, Han S A, Hwang S, Kim S W, Shin H J 2015 ACS Nano 9 633
[19]	Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W 2016 Small 12 2942
[20]	Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, Lee P S 2016 Adv. Funct. Mater. 26 2176
[21]	Puglisi F M, Larcher L, Pan C, Xiao N, Shi Y, Hui F, Lanza M 2016 2016 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA, December 3-7, 2016 p6651209
[22]	Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Boldberg B B, Ruoff R S 2011 ACS Nano 5 6916
[23]	Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng X M 2017 Small 13 1604179
[24]	Song L, Ci L, Lu H, Sorokin P B, Jin C, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I, Ajayan P M 2010 Nano Lett. 10 3209
[25]	Shi Y, Hamsen C, Jia X, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H, Juang Z Y, Dresselhaus M S, Li L J, Kong J 2010 Nano Lett. 10 4134
[26]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[27]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297

[1]	Wang Xuan, Du Jian-Rong, Li Zhi-Jun, Ma Ming-Lin, Li Chun-Lai. Coexisting discharge and synchronization of heterogeneous discrete neural network with crosstalk memristor synapses. Acta Physica Sinica, 2024, 0(0): . doi: 10.7498/aps.73.20231972
[2]	Guo Hui-Meng, Liang Yan, Dong Yu-Jiao, Wang Guang-Yi. Simplification of Chua corsage memristor and hardware implementation of its neuron circuit. Acta Physica Sinica, 2023, 72(7): 070501. doi: 10.7498/aps.72.20222013
[3]	Li Ce, Yang Dong-Liang, Sun Lin-Feng. Research progress of neuromorphic devices based on two-dimensional layered materials. Acta Physica Sinica, 2022, 71(21): 218504. doi: 10.7498/aps.71.20221424
[4]	Wang Shi-Chang, Lu Zhen-Zhou, Liang Yan, Wang Guang-Yi. Neuromorphic behaviors of N-type locally-active memristor. Acta Physica Sinica, 2022, 71(5): 050502. doi: 10.7498/aps.71.20212017
[5]	Hu Wei, Liao Jian-Bin, Du Yong-Qian. An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505. doi: 10.7498/aps.70.20210116
[6]	Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang. Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702. doi: 10.7498/aps.69.20200617
[7]	Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Mathematical model of memristor with sensory memory. Acta Physica Sinica, 2019, 68(1): 018501. doi: 10.7498/aps.68.20181577
[8]	Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan. Analysis of memristor model with learning-experience behavior. Acta Physica Sinica, 2019, 68(19): 198502. doi: 10.7498/aps.68.20190808
[9]	Liu Yi-Chun, Lin Ya, Wang Zhong-Qiang, Xu Hai-Yang. Oxide-based memristive neuromorphic synaptic devices. Acta Physica Sinica, 2019, 68(16): 168504. doi: 10.7498/aps.68.20191262
[10]	Chen Yi-Hao, Xu Wei, Wang Yu-Qi, Wan Xiang, Li Yue-Feng, Liang Ding-Kang, Lu Li-Qun, Liu Xin-Wei, Lian Xiao-Juan, Hu Er-Tao, Guo Yu-Feng, Xu Jian-Guang, Tong Yi, Xiao Jian. Fabrication of synaptic memristor based on two-dimensional material MXene and realization of both long-term and short-term plasticity. Acta Physica Sinica, 2019, 68(9): 098501. doi: 10.7498/aps.68.20182306
[11]	Xu Wei, Wang Yu-Qi, Li Yue-Feng, Gao Fei, Zhang Miao-Cheng, Lian Xiao-Juan, Wan Xiang, Xiao Jian, Tong Yi. Design of novel memristor-based neuromorphic circuit and its application in classical conditioning. Acta Physica Sinica, 2019, 68(23): 238501. doi: 10.7498/aps.68.20191023
[12]	Wang Wei, Zeng Yi-Cheng, Sun Rui-Ting. Research on a six-order chaotic circuit with three memristors. Acta Physica Sinica, 2017, 66(4): 040502. doi: 10.7498/aps.66.040502
[13]	Yuan Ze-Shi, Li Hong-Tao, Zhu Xiao-Hua. A digital-analog hybrid random number generator based on memristor. Acta Physica Sinica, 2015, 64(24): 240503. doi: 10.7498/aps.64.240503
[14]	Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang. Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301. doi: 10.7498/aps.63.187301
[15]	Liu Yu-Dong, Wang Lian-Ming. Application of memristor-based spiking neural network in image edge extraction. Acta Physica Sinica, 2014, 63(8): 080503. doi: 10.7498/aps.63.080503
[16]	Li Zhi-Jun, Zeng Yi-Cheng, Li Zhi-Bin. Memristive chaotic circuit based on modified SC-CNNs. Acta Physica Sinica, 2014, 63(1): 010502. doi: 10.7498/aps.63.010502
[17]	Xie Jian-Feng, Cao Jue-Xian. Modulation of the band structure of layered BN film with stain. Acta Physica Sinica, 2013, 62(1): 017302. doi: 10.7498/aps.62.017302
[18]	Jia Lin-Nan, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei. Progress of memristor modulated by interfacial effect. Acta Physica Sinica, 2012, 61(21): 217306. doi: 10.7498/aps.61.217306
[19]	Ji Gao-Feng, Liu Sheng-Li. Modified Kosterlitz-Thouless transition model for the temperature dependence of the resistivity of anisotropic superconductors. Acta Physica Sinica, 2007, 56(7): 4148-4151. doi: 10.7498/aps.56.4148
[20]	Shi Li-Bin, Ren Jun-Yuan, Zhang Feng-Yun, Zhang Guo-Hua, Yu Zeng-Qiang. A study on resistive transition and anisotropy of MgB2/Al2O3 superconducting thin films. Acta Physica Sinica, 2007, 56(9): 5353-5358. doi: 10.7498/aps.56.5353

Catalog

Vol. 66, Issue 21 - 2017-11-05

Metrics

Abstract views: 7251
PDF Downloads: 540
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板