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Research status and development graphene devices using silicon as the subtrate

Wu Pei Hu Xiao Zhang Jian Sun Lian-Feng

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Research status and development graphene devices using silicon as the subtrate

Wu Pei, Hu Xiao, Zhang Jian, Sun Lian-Feng
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  • Graphene, a two-dimensional sheet of sp2-hybridized carbon material, possesses excellent properties, such as high carrier mobility, high electrical conductivity, high thermal conductivity, strong mechanical strength and quantum anomalous Hall effect. So graphene quickly lights the enthusiasm for its research and application due to its superior performance. The silicon-based graphene devices are compatible with traditional silicon-based semiconductor technology. The combination of silicon-based graphene devices and silicon-based devices can greatly improve the overall performances of semiconductor devices. With the optimization of graphene preparation process and transfer technology, graphene devices using silicon as the substrate will show promising potential applications. With the scaling of device, the heat dissipation, power consumption and other issues impede the integration of silicon-based devices. Graphene provides a possible solution to these problems. In this paper, we summarize the graphene application in field effect transistor. The bandgap of graphene is zero, which will have adverse effect on the switching ratio of the device. In order to solve this problem, a variety of methods are used to open its bandgap, such as the quantum confinement method, the chemical doping method, the electric field regulation method, and the introduction stress method. In the field of optoelectronic devices, graphene can evenly absorb light at all frequencies, and its photoelectric properties have also been widespread concerned, such as photoelectric detector, photoelectric modulator, solar cell, etc. At the same time, graphene, as a typical two-dimensional material, possesses superior electrical properties and ultra-high specific surface area, and becomes the hottest material in high sensitivity sensors.
      Corresponding author: Sun Lian-Feng, slf@nanoctr.cn
    • Funds: Project supported by the Major Nanoprojects of Ministry of Science and Technology of China (Grant No. 2016YFA0200403) and the National Natural Science Foundation of China (Grant No. 51472057).
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  • [1]

    Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666

    [2]

    Singh V, Joung D, Zhai L, Das S, Khondaker S I, Seal S 2011 Prog. Mater. Sci. 56 1178

    [3]

    Huang X, Yin Z Y, Wu S X, Qi X Y, He Q Y, Zhang Q C, Yan Q Y, Boey F, Zhang H 2011 Small 7 1876

    [4]

    Bolotin K I, Sikes K J, Jiang Z, Klima M, Fundenberg G, Hone J, Kim P, Stormer H L 2008 Solid State Commun. 146 351

    [5]

    Nair R R, Blake P, Grigorenko A N, Novoselov K S, Booth T J, Stauber T, Peres N M R, Geim A K 2008 Science 320 1308

    [6]

    Zhang Y B, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201

    [7]

    Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 Proc. Natl. Acad. Sci. USA 102 10451

    [8]

    Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P, Geim A K 2007 Science 315 1379

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    [10]

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    [11]

    Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206

    [12]

    Meyer J C, Geim A K, Katsnelson M I, Novoselov S, Booth T J, Roth S 2007 Nature 446 60

    [13]

    Geim A K, Novoselov K S 2007 Nat. Mater. 6 183

    [14]

    Son Y W, Cohen M L, Louie S G 2006 Phys. Rev. Lett. 97 216803

    [15]

    Han M Y, Ozyilmaz B, Zhang Y, Kim P 2007 Phys. Rev. Lett. 98 206805

    [16]

    Chen Z, Lin Y M, Rooks M J, Avouris P 2007 Physica E 40 228

    [17]

    Trauzettel B, Bulaev D V, Loss D, Burkard G 2007 Nat. Phys. 3 192

    [18]

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    [19]

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    [20]

    Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen R, Wang F 2009 Nature 459 820

    [21]

    Evaldsson M, Zozoulenko I V, Xu H, Heinzel T 2008 Phys. Rev. B 78 161407

    [22]

    Bae S, Kim H, Lee Y, Xu X, Park J S, Zheng Y, Balakrishnan J, Lei T, Kim H R, Song Y, Kim Y J, Kim K S, Ozyilmaz B, Ahn J H, Hong B H, Iijima S 2010 Nat. Nanotechnol. 5 574

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    [25]

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    [26]

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    [30]

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    Yu J, Liu G, Sumant A V, Balandin A A 2012 Nano Lett. 12 1603

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Metrics
  • Abstract views:  6207
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  • Cited By: 0
Publishing process
  • Received Date:  04 July 2017
  • Accepted Date:  06 September 2017
  • Published Online:  05 November 2017

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