Research progress of graphene radio frequency devices

Lu Qi; Lyu Hong-Ming; Wu Xiao-Ming; Wu Hua-Qiang; Qian He

doi:10.7498/aps.66.218502

Abstract

Graphene, the first realized two-dimensional material, has received much attention in electronic applications in recent years. With ultra-high carrier mobility and one atom thick structure, graphene becomes a promising semiconductor candidate for solving the problem of short channel effect in nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET), and exploring its applications in radio frequency devices. How to develop the advantages of graphene transistor in radio frequency is an attractive research area. The first step is to obtain high quality graphene material. In this article we summarize the graphene growth methods commonly used in electronic field, including chemical vapor deposition on metal substrates and epitaxial method on wide bandgap semiconductor and insulator substrates. Another key factor to improve graphene transistor performance is to carefully design the device structure and process flow. Multi-finger gate and T-shaped gate are widely used in MOSFET. These two structures can significantly reduce gate resistance, and result in a better radio frequency performance. Inverted process is introduced for graphene FET fabrication, which is compatible with silicon-based back-end-of-line technology. It can reduce the damages to graphene during fabrication. Another improved self-aligned gate deposition process can lead to a good gate coupling and less parasitic parameters. These newly developed process play a prominent part in increasing the cut-off frequency and maximum oscillation frequency of graphene radio frequency devices. In addition, single crystal graphene is helpful in eliminating carriers scattering and improving the radio frequency properties of graphene transistor. So far, the highest cut-off frequency of graphene transistor reaches over 300 GHz by a few groups, but the maximum oscillation frequency remains low. Record-high maximum oscillation frequency is 200 GHz when gate length is 60 nm. Further improvement of maximum oscillation frequency needs to be tried out. Several graphene radio frequency circuits are also discussed in the paper. Some of the circuits have similar structures to silicon-based circuits, and others are designed based on the unique property of graphene transistor, like ambipolar transport properties. The new concept circuits have simpler structures than conventional circuits. With the rapid development of graphene growth and related integrating technology, the potential to use graphene in radio frequency field will be further increased.

Keywords:

Authors and contacts

1.
Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
2.
Rice University, Houston, TX 77005, USA;
3.
Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China

Corresponding author: Qian He, qianh@mail.tsinghua.edu.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2013CBA01604), the National Natural Science Foundation of China (Grant Nos. 61377106, 61474072), and the Natural Science Foundation of Beijing, China (Grant No. 4162031).

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Cited By

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Geim A K, Novoselov K S 2009 Nat. Mater. 6 183
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[5]	Hernandez Y, Nicolosi V, Lotya M, Blighe F, Sun Z, De S, McGovern I T, Holland B, Byrne M, Gunko Y, Boland J, Niraj P, Duesberg G, Krishnamurthy S, Goodhue R, Hutchison J, Scardaci V, Ferrari A, Coleman J 2008 Nat. Nanotechnol. 3 563
[6]	Schniepp H C, Li J L, Mcallister M J, Sai H, Herrera-Alonso M, Adamson D H, Prudhomme R, Car R, Saville D, Aksay I 2006 J. Phys. Chem. B 110 8535
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[9]	Forbeaux I, Themlin J M, Debever J M 1998 Phys. Rev. B 58 16396
[10]	Yu C, Li J, Liu Q B, Cai S J, Feng Z H 2014 Acta Phys. Sin. 63 038102 (in Chinese) [蔚翠, 李佳, 刘庆彬, 蔡树军, 冯志红 2014 物理学报 63 038102]
[11]	Li X, Cai W, An J, Kim S, Nah J, Yang D, Riner R, Velamakanni A, Jung I, Tutuc E, Banerjee S, Colombo L, Ruoff R 2009 Science 324 1312
[12]	Bae S, Kim H, Lee Y, Lee Y, Xu X, Park J, Zheng Y, Balakrishnan J, Lei T, Kim H, Song Y, Kim Y, Kim K, Kim K, Ozyilmaz B, Ahn J, Hong B, Iijima S 2010 Nat. Nanotechnol. 5 574
[13]	Xiao K, Wu H, L H, Wu X, Qian H 2013 Nanoscale 5 5524
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Vol. 66, Issue 21 - 2017-11-05

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