Continuous-wave intracavity YVO4/BaWO4 Raman laser pumped by a wavelength-locked 878.9 nm laser diode

Zhang Yun-Chuan; Fan Li; Wei Chen-Fei; Gu Xiao-Min; Ren Si-Xian

doi:10.7498/aps.67.20171848

Abstract

In this paper, the composite Nd:YVO4 laser crystal is in-band pumped by a wavelength-locked laser diode at 878.9 nm, with the purpose of reducing thermal effects and improving pump absorption simultaneously. By using the YVO4 and BaWO4 crystals as Raman media, the influences of crystal properties, resonator structure and stability on the performance of continuous-wave intracavity Raman laser are investigated experimentally and theoretically. The results show that the resonator stability greatly affects laser performance due to the long cavity length of intracavity Raman laser. By choosing the Raman medium with high Raman gain, we can not only obtain higher Raman conversion efficiency, but also reduce the thermal effect to a certain extent. Furthermore, the smaller the curvature radius of the output mirror in the plano-concave cavity structure, the greater the power density of the fundamental laser in the Raman crystal is and the wider the dynamic stability region of the resonator, and hence the higher output power of the Raman laser can be achieved. Finally, by using 30-mm BaWO4 crystal as Raman medium, a highest Raman output of 3.02 W is obtained at a pump power of 25.1 W, corresponding to a diode-to-Stokes optical conversion efficiency of 12%.

Keywords:

Authors and contacts

1.
Institute of Applied Photonic Technology, College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China;
2.
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

Corresponding author: Fan Li, 025201-20170845

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11774301), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130453), and the State Key Laboratory for Solid State Microstructures, Nanjing University, China (Grant No. M29027).

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Cited By

[1]	Pask H M 2003 Prog. Quant. Electron. 27 3
[2]	Cerny P, Jelinkova H, Zverev P G, Basiev T T 2004 Prog. Quant. Electron. 28 113
[3]	Piper J A, Pask H M 2007 IEEE J. Sel. Top. Quant. 13 692
[4]	Grabtchikov A S, Lisinetskii V A, Orlovich V A, Schmitt M, Maksimenka R, Kiefer W 2004 Opt. Lett. 29 2524
[5]	Bonne G M, Lin J P, Kemp A J, Wang J Y Zhang H J Spence D J, Pask H M 2014 Opt. Express 22 7492
[6]	Neto J J, Artlett C, Lee A, Lin J P, Spence D, Piper J Wetter N U, Pask H 2014 Opt. Mater. Express 4 889
[7]	Tang C Y, Zhuang W Z, Su K W, Chen Y F 2015 IEEE J. Sel. Top. Quant. 21 142
[8]	Lee C Y, Chang C C, Sung C L, Chen Y F 2015 Opt. Express 23 22765
[9]	Kores C C, Jakutis-Neto J, Geskus D, Pask H M, Wetter N U 2015 Opt. Lett. 40 3524
[10]	Sarang S, Williams R J, Lux O, Kitzler O, Mckay A, Jasbeer H, Mildren R P 2016 Opt. Express 24 21463
[11]	Pask H M 2005 Opt. Lett. 30 2454
[12]	Orlovich V A, Burakevich V N, Grabtchikov A S, Lisinetskii V A, Demidovich A A, Eichler H J, Turpin P Y 2005 Laser Phys. Lett. 3 71
[13]	Dekker P, Pask H M, Piper J A 2007 Opt. Lett. 32 1114
[14]	Fan L, Fan Y X, Duan Y H, Wang H T, Jia G H, Tu C Y 2009 Appl. Phys. B 94 553
[15]	Fan L, Fan Y X, Li Y Q, Zhang H J, Wang Q, Wang J, Wang H T 2009 Opt. Lett. 34 1687
[16]	Lee A J, Pask H M, Piper J A, Zhang H J, Wang J Y 2010 Opt. Express 18 5984
[17]	Jakutis-Neto J, Lin J P, Wetter N U, Pask H 2012 Opt. Express 20 9841
[18]	Wang X L, Dong J, Wang X J, Xu J, Ueda K I, Kaminskii A A 2016 Opt. Lett. 41 3559
[19]	Ding X, Fan C, Sheng Q, Li B, Yu X Y, Zhang G Z, Sun B, Wu L, Zhang H Y, Liu J, Jiang P B, Zhang W, Zhao C, Yao J Q 2014 Opt. Express 22 29121
[20]	Sheng Q, Ding X, Li B, Yu X Y, Fan C, Zhang H Y, Liu J, Jiang P B, Zhang W, Wen W Q, Sun B, Yao J Q 2014 J. Opt. 16 105206
[21]	Li B, Lei P, Sun B, Bai Y B 2017 Appl. Opt. 56 1542
[22]	Zhang X, Zhang Y C, Li J, Li R J, Song Q K, Zhang J L, Fan L 2017 Acta Phys. Sin. 66 194203 (in Chinese)[张鑫, 张蕴川, 李建, 李仁杰, 宋庆坤, 张佳乐, 樊莉 2017 物理学报 66 194203]
[23]	Innocenzi M E, Yura H T, Fincher C L, Fields R A 1990 Appl. Phys. Lett. 56 1831
[24]	Shang C 2013 M. S. Dissertation (Tianjin: Tianjin University) (in Chinese)[尚策 2013 硕士学位论文(天津: 天津大学)]
[25]	Mao Y F, Zhang H L, Xu L, Deng B, Sang S H, He J L, Xing J C, Xin J G, Jiang Y 2015 Acta Phys. Sin. 64 014203 (in Chinese)[毛叶飞, 张恒利, 徐浏, 邓波, 桑思晗, 何京良, 邢冀川, 辛建国, 江毅 2015 物理学报 64 014203]
[26]	Sheng Q, Ding X, Li B, Yu X Y, Fan C, Zhang H Y, Liu J, Jiang P B, Zhang W, Wen W Q, Sun B, Yao J Q 2014 J. Opt. 16 105206
[27]	Kaminskii A A, Ueda K, Eichler H J 2001 Opt. Commun. 194 201
[28]	Zverev P G, Basiev T T, Sobol A A 2000 Quantum Electron 30 55

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Vol. 67, Issue 2 - 2018-01-20

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