Research progress of metal-insulator phase transition in VO<sub>2</sub> induced by electric field

Sun Xiao-Ning; Qu Zhao-Ming; Wang Qing-Guo; Yuan Yang; Liu Shang-He

doi:10.7498/aps.68.20190136

Abstract

Vanadium dioxide (VO₂) is a typical representative of strongly correlated electronic systems, which undergoes a reversible transition from the insulator phase to metal phase, induced by a certain threshold for each of temperature, electric field, illumination and pressure. The crystal structure of VO₂ will undergo a reversible transition from monoclinic structure to tetragonal rutile structure when the phase transition happens, which is considered as the microscopic mechanism of VO₂ metal-insulator transition (MIT). The conductivity of VO₂ can be increased by 2—5 orders of magnitude when the MIT is induced by electric field, which makes VO₂ possess good application prospects in the fields of restructurable slot antenna, terahertz radiation, intelligent electromagnetic protection materials, etc. Therefore, the reversible metal-insulator phase transition in VO₂, induced by electric field, has long been a research hotspot, which however, has been seldom reported. Firstly, in this paper, the changes of the crystal structure and energy band structure of VO₂ during MIT are introduced briefly. The methods of regulating the phase transition are given, including temperature control, bandwidth and band-filling control. Then, the important discovery and research progress of VO₂ MIT induced by electric field based on the research method, response time, critical threshold field and phase transition mechanism are summarized and reviewed comprehensively. The method of studying the VO₂ phase transition relates to its structure, including planar structure, three-terminal gated ?eld effect switch and sandwiched layer structure. The sandwich layer structure is more suitable for investigating the MIT characteristics of VO₂ in experimental stage because of its structural advantage of preparation and test. The response time of VO₂ MIT can be completed in nanoseconds, of which the substantial parameter has been revealed by many reports, also including the excellent reversibility of VO₂ MIT. The MIT critical threshold field of the VO₂ film can be tuned by element doping, coexistence of multivalent vanadium oxides and multiple physical field synergism effectively. The MIT mechanism of VO₂ induced by electric field has been proposed so far, which includes joule heating mechanism and pure electric field mechanism, and the latter is considered to be more likely to give a reasonable explanation. Finally, in the paper the current problems of the VO₂ MIT research and the near-future development direction of the VO₂ MIT materials are also pointed out.

Keywords:

Authors and contacts

National Key Laboratory on Electromagnetic Environment Effects, Army Engineering University, Shijiazhuang 050003, China

Corresponding author: Qu Zhao-Ming, iamqzm3990@163.com ; Liu Shang-He, liushh@cae.cn

Funds: Project supported by the Foundation of National Key Laboratory on Electromagnetic Environment Effects, China (Grant No. 614220504030617).

FullText HTML : translate this paragraph

References

[1]	Mott N F 1949 Proc. Phys. Soc. 62 416 Google Scholar
[2]	Morin F 1959 Phys. Rev. Lett. 3 34 Google Scholar
[3]	Fuls E, Hensler D, Ross A 1967 Appl. Phys. Lett. 10 199 Google Scholar
[4]	陈培祖, 李毅, 蒋蔚, 徐婷婷, 伍征义, 张娇, 刘志敏 2017 纳米技术 42 387 Chen P Z, Li Y, Jiang W, Xu T T, Wu Z Y, Zhang J, Liu Z M 2017 Semiconductor Technology 42 387
[5]	Tashman J, Lee J, Paik H, Moyer J, Misra R, Mundy J, Spila T, Merz T, Schubert J, Muller D 2014 Appl. Phys. Lett. 104 063104 Google Scholar
[6]	Chae B G, Kim H T, Yun S J 2008 Electrochem. Solid-State Lett. 11 D53 Google Scholar
[7]	Youn D H, Lee J W, Chae B G, Kim H T, Maeng S L, Kang K Y 2004 J. Appl. Phys. 95 1407 Google Scholar
[8]	Chae B G, Youn D H, Kim H T, Maeng S, Kang K Y 2003 Mater. Sci. 103 11616
[9]	王泽霖, 张振华, 赵喆, 邵瑞文, 隋曼龄 2018 物理学报 67 177201 Google Scholar Wang Z L, Zhang Z H, Zhao Z, Shao R W, Sui M L 2018 Acta Phys. Sin. 67 177201 Google Scholar
[10]	Golan G, Axelevitch A, Sigalov B, Gorenstein B 2003 Microelectron. J. 34 255 Google Scholar
[11]	Chen S, Ma H, Dai J, Yi X 2007 Appl. Phys. Lett. 101 117
[12]	邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武 2013 物理学报 62 217201 Google Scholar Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 Google Scholar
[13]	Yang Z, Ko C, Ramanathan S 2011 Annu. Rev. Mater. Res. 41 337 Google Scholar
[14]	罗明海, 徐马记, 黄其伟, 李派, 何云斌 2016 物理学报 65 047201 Google Scholar Luo M H, Xu M J, Huang Q W, Li P, He Y B 2016 Acta Phys. Sin. 65 047201 Google Scholar
[15]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837 Google Scholar
[16]	Anagnostou D E, Teeslink T S, Torres D, Sepúlveda N 2016 IEEE International Symposium on Antenna and Propagation Pajardo, June 26-July 1 2016, p1055
[17]	Ding F, Zhong S M, Bozhevolnyi S I 2018 Adv.Optical Mater. 2018 1701204
[18]	Anagnostou D E, Goussetis G, Torres D, Sepulveda N 2017 International Workshop on Antenna Technology: Small Antennas, Innovative Structures, and Applications (iWAT) Athens, Greece, May 01, 2017 p146
[19]	Solyankin P M, Esaulkov M N, Sidoro A Y, Shkurinov A P, Luo Q, Zhang X C 2015 40th International Conference on Infrared Milimeter and Terahertz Waves(IRMMW-THz) Fajardo, Aug. 23—28 2015, p2162
[20]	孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 物理学报 62 017202 Google Scholar Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 Google Scholar
[21]	Vitale W A, Tamagnone M, Émond N, Drogoff B L, Capdevila S, Skrivervik A, Chaker M, Mosig J R, Ionescu A M 2017 Nature 7 41546
[22]	Hashemi M R, Yang S, Jarra M, Wang T Y, Sepulveda N 2015 IEEE International Symposium on Antennas and Propagation&USNC/URSI National Radio Science Meeting Vancouver, BC, Canada, July 19-24 2015 p77
[23]	Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Dev. Lett. 34 220 Google Scholar
[24]	Valle J, Kalcheim Y, Trastoy J, Charnukha A, Basov D N, Schuller I K 2017 Phys. Rev. Applied 8 054041 Google Scholar
[25]	Won S, Lee S Y, Hwang J, Park J, Seo H 2017 Electron. Mater. Lett. 14 14
[26]	Lu P, Qu Z M, Wang Q G, Wang Y, Cheng W 2018 e-Polymers 18 85 Google Scholar
[27]	Qu Z M, Lu P, Yuan Y, Wang Q G 2018 IOP Conference Series: Materials Science and Engineering 301 012013 Google Scholar
[28]	雷忆三, 孙丽君 2012 现代工业经济和信息化 18 74 Lei Y S, Sun L J 2012 Modern Industrial Economy and Informationization 18 74
[29]	刘嘉玮, 王建江, 许宝才 2017 功能材料 48 10029 Liu J W, Wang J J, Xu B C 2017 Journal of Functional Materals 48 10029
[30]	Stefanovich G, Pergament A, Kazakova E 2000 Tech. Phys. Lett. 26 478 Google Scholar
[31]	Karakotsou C, Kalomiros J, Hanias M, Anagnostopoulos A, Spyridelis J 1992 Phys. Rev. B: Condens. Matter 45 11627 Google Scholar
[32]	Baum P, Yang D S, Zewail A H 2007 Science 318 788 Google Scholar
[33]	Wu B, Zimmers A, Aubin H, Ghosh R, Liu Y, Lopez R 2011 Phys. Rev. B: Condens. Matter 84 241410 Google Scholar
[34]	Kim H T, Chae B G, Youn D H, Kim G, Kang K Y, Lee S J, Kim K, Lim Y S 2005 Appl. Phys. Lett. 86 242101 Google Scholar
[35]	Kim H T, Kim B J, Choi S, Chae B G, Lee Y W, Driscoll T, Qazilbash M M, Basov D 2010 J. Appl. Phys. 107 023702 Google Scholar
[36]	Leroy J, Crunteanu A, Bessaudou A, Cosset F, Champeaux C, Orlianges J C 2012 Appl. Phys. Lett. 100 213507 Google Scholar
[37]	李昂, 王庆国, 王腾, 王研, 成伟 2016 兵器材料科学与工程 39 52 Li A, Wang Q G, Wang T, Wang Y, Cheng W 2016 Ordnance Material Science and Engineering 39 52
[38]	Shan S H, Wang Q G, Qu Z M, Cheng W, Li A 2017 Advances in Engineering Research 110 129
[39]	Sun X N, Wang Q G, He C A, Qu Z M 2018 3rd International Conference on Materials Science Resource and Environment Engineering Chongqing, October 26-28, 2018 p030001-1
[40]	Nakano M, Shibuya K, Okuyama D, Hatano T, Ono S, Kawasaki M, Iwasa Y, Tokura Y 2012 Nature 487 459 Google Scholar
[41]	Chu Q Q, Song Z Y, Liu Q H 2018 Appl. Phys. Express 11 082203
[42]	张娇, 李毅, 刘志敏, 李政鹏, 黄雅琴, 裴江恒, 方宝英, 王晓华, 肖寒 2017 物理学报 66 238101 Google Scholar Zhang J, Li Y, Liu Z M, Li Z P, Huang Y Q, Pei J H, Fang B Y, Wang X H, Xiao H 2017 Acta Phys. Sin. 66 238101 Google Scholar
[43]	Cho C R, Cho S, Vadim S, Jung R, Yoo I 2006 Thin Solid Films 495 375 Google Scholar
[44]	Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S 2009 J. Appl. Phys. 106 50
[45]	Hao R, Li Y, Liu F, Sun Y, Tang J, Chen P, Jiang W, Wu Z, Xu T, Fang B 2016 Infrared Phys. Tech. 75 82 Google Scholar
[46]	He X F, Xu J, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J 2015 Appl. Phys. Lett. 106 093106 Google Scholar
[47]	Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76 Google Scholar
[48]	Michael F B, Buckman A B, Rodger M W, Thierny L, Patrick G, Alain B 1995 J. Appl. Phys. 79 2404
[49]	山世浩, 王庆国, 曲兆明, 成伟, 李昂 2018 材料导报 32 870 Google Scholar Shan S H, Wang Q G, Qu Z M, Cheng W, Li A 2018 Mater. Rev. 32 870 Google Scholar
[50]	王庆国, 何长安, 曲兆明, 山世浩, 李昂, 成伟, 王妍 2018 安全与电磁兼容 4 14 Wang Q G, He C A, Qu Z M, Shan S H, Li A, Cheng W, Wang Y 2018 Safety and EMC 4 14
[51]	陈飞, 黄康, 顾聪聪, 徐晓峰 2016 东华大学学报(自然科学版) 42 131 Google Scholar Chen F, Huang K, Gu C C, Xu X F 2016 Journal of Donghua University, Natural Sciences 42 131 Google Scholar
[52]	付学成, 李金华, 谢建生, 袁宁一 2010 红外技术 32 173 Google Scholar Fu X C, Li J H, Xie J S, Yuan N Y 2010 Infrared Technology 32 173 Google Scholar
[53]	Ji C H, Wu Z M, Wua X F, Wang J, Liu X C, Gou J, Zhou H X, Yao W, Jiang Y D 2018 Appl. Surf. Sci. 455 622 Google Scholar
[54]	Dai L, Chen S, Liu J J, Gao Y F, Zhou J D, Chen Z, Cao C X, Luo H J, Kanehira M 2013 Phys.Chem. Chem.Phys. 15 11723 Google Scholar
[55]	吕维忠, 黄德贞, 罗仲宽, 刘波 2015 深圳大学学报理工版 32 385 Lv W Z, Huang D Z, Luo Z K, Liu B 2015 Journal of Shenzhen University Science and Engineering 32 385
[56]	Lu S W, Hou L S, Gan F X 1999 Thin Solid Films 353 40 Google Scholar
[57]	Jin P, Nakao S, Tanemura S 1998 Thin Solid Films 324 151 Google Scholar
[58]	Zhang K K, Pan G Y, Dang Y Y, Qi W Y, Liu Q, Li Y B, Liu J C 2017 3rd Annual 2017 International Conference on Sustainable Development (ICSD2017) Tianjin, China, July 14-16, 2017 p164
[59]	Rajeswaran B, Umarji A M 2016 AIP Advances 6 035215 Google Scholar
[60]	山世浩, 王庆国, 曲兆明 2017 兵器材料科学与工程 40 40 Shan S H, Wang Q G, Qu Z M 2017 Ordnance Material Science and Engineering 40 40
[61]	Liao G M, Chen S, Fan L L, Chen Y L, Wang X Q, Ren H, Zhang Z M, Zou C W 2016 AIP Advances 6 045014−1
[62]	Kumar S, Pickett M D, Strachan J P, Gibson G, Nishi Y, Williams R S 2013 J. Adv. Mater. 25 6128 Google Scholar
[63]	Freeman E, Stone G, Shukla N, Paik H, Moyer J A, Cai Z, Wen H, Engel-Herbert R, Schlom D G, Gopalan V 2013 Appl. Phys. Lett. 103 263109 Google Scholar
[64]	Singh S, Horrocks G, Marley P M, Shi Z, Banerjee S, Sambandamurthy G 2015 Phys. Rev. B: Condens. Matter 92 155121 Google Scholar
[65]	Bongjin S M, Yoon J, Mo S K, Chen K, Nobumichi T, Dejoie C, Kunz M, Liu Z, Park C, Moon K, Ju H 2013 Appl. Phys. Lett. 103 061902 Google Scholar
[66]	Li D, Sharma A A, Gala D K, Shukla N, Paik H, Datta S, Schlom D G, Bain J A, Skowronski M 2016 ACS Appl. Mater. Inter. 8 12908 Google Scholar
[67]	Stoliar P, Rozenberg M, Janod E, Corraze B, Tranchant J, Cario L 2014 Phys. Rev. B 90 045146 Google Scholar
[68]	Gray A X, Hoffmann M C, Jeong J, Aetukuri N P, Zhu D, Hwang H Y, Brandt N C, Wen H, Sternbach A J, Bonetti S, Reid A H, Kukreja R, Graves C, Wang T, Granitzka P, Chen Z, Higley D J, Chase T, Jal E, Abreu E, Liu M K, Weng T C, Sokaras D, Nordlund D, Chollet M, Alonso-Mori R, Lemke H, Glownia J M, Trigo M, Zhu Y, Ohldag H, Freeland J W, Samant M G, Berakdar J, Averitt R D, Nelson K A, Parkin S S P, Dürr H A 2018 Phys. Rev. B: Condens. Matter 98 045104 Google Scholar
[69]	Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902 Google Scholar
[70]	Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Sun J Y, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750 Google Scholar
[71]	梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达 2012 纳米技术与精密工程 10 160 Google Scholar Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160 Google Scholar
[72]	Matsunami D, Fujita A 2015 Appl. Phys. Lett. 106 4494
[73]	Shi Y, Chen L Q 2019 Phys. Rev. Appl. 11 014059 Google Scholar
[74]	Zhang Y, Ramanathan S 2011 Solid-State Electron. 62 161 Google Scholar
[75]	Gopalakrishnan G, Ruzmetov D, Ramanathan S 2009 J. Mater. Sci. Lett. 44 5345 Google Scholar
[76]	Sakai J, Kurisu M 2008 Phys. Rev. B: Condens. Matter 78 033106 Google Scholar
[77]	Joushaghani A, Jeong J, Paradis S, Alain D, Stewart Aitchison J, Poon J K 2014 Appl. Phys. Lett. 104 221904 Google Scholar

Cited By

图 1 VO₂晶体结构图^[32]　(a) M相; (b) R相

Figure 1. Crystal structure of VO₂: (a) M phase; (b) R phase.

DownLoad: Full-Size Img PowerPoint

图 2 电场作用下VO₂薄膜中的电流变化曲线^[8]

Figure 2. Changes of currents by application ofthe electric field to VO₂ thin films^[8].

DownLoad: Full-Size Img PowerPoint

图 3 VO₂器件结构示意图　(a)平面结构^[36]; (b)三端场效应管结构^[7]; (c)三明治结构^[45]

Figure 3. Diagram of VO₂ device structure: (a) Planar structure^[36]; (b) three-terminal gated field effect switches^[7]; (c) layered structure^[45].

DownLoad: Full-Size Img PowerPoint

图 4 量子阱结构示意图(内嵌图为量子阱结构的电容器件模型^[46]

Figure 4. Schematic of quantum well structure (inset shows a capacitance device model for the quantum well structure)^[46].

DownLoad: Full-Size Img PowerPoint

图 5 短脉冲响应曲线^[36]

Figure 5. Response curve of short pulse^[36].

DownLoad: Full-Size Img PowerPoint

图 6 (a) Sawyer-Tower测试电路; (b)方波脉冲电压与峰值电流关系图(内嵌图为加载7 V和10 V开关电压时的电压和电流曲线)^[47]

Figure 6. (a) Sawyer-Tower test circuit; (b) peak current as a function of square wave pulse voltage (the inset illustrates voltage and current curves using applied switching pulses of 7 V and 10 V)^[47].

DownLoad: Full-Size Img PowerPoint

图 7 VO₂薄膜温度调控相变电场曲线图(电极间距5 mm)^[60]

Figure 7. MIT electric field curve controlled by temperature for VO₂ thin film (the electrode spacing is 5 mm) ^[60].

DownLoad: Full-Size Img PowerPoint

图 8 电场强度调控相变温度的关系图^[60]

Figure 8. MIT temperature curve controlled by electric field intensity^[60].

DownLoad: Full-Size Img PowerPoint

图 9 (a) VO₂纳米纤维; (b)测试器件; (c)温度响应曲线^[64]

Figure 9. (a) VO₂ nanofibers; (b) test device; (c) curve of temperature response.^[64]

DownLoad: Full-Size Img PowerPoint

[1]	Mott N F 1949 Proc. Phys. Soc. 62 416 Google Scholar
[2]	Morin F 1959 Phys. Rev. Lett. 3 34 Google Scholar
[3]	Fuls E, Hensler D, Ross A 1967 Appl. Phys. Lett. 10 199 Google Scholar
[4]	陈培祖, 李毅, 蒋蔚, 徐婷婷, 伍征义, 张娇, 刘志敏 2017 纳米技术 42 387 Chen P Z, Li Y, Jiang W, Xu T T, Wu Z Y, Zhang J, Liu Z M 2017 Semiconductor Technology 42 387
[5]	Tashman J, Lee J, Paik H, Moyer J, Misra R, Mundy J, Spila T, Merz T, Schubert J, Muller D 2014 Appl. Phys. Lett. 104 063104 Google Scholar
[6]	Chae B G, Kim H T, Yun S J 2008 Electrochem. Solid-State Lett. 11 D53 Google Scholar
[7]	Youn D H, Lee J W, Chae B G, Kim H T, Maeng S L, Kang K Y 2004 J. Appl. Phys. 95 1407 Google Scholar
[8]	Chae B G, Youn D H, Kim H T, Maeng S, Kang K Y 2003 Mater. Sci. 103 11616
[9]	王泽霖, 张振华, 赵喆, 邵瑞文, 隋曼龄 2018 物理学报 67 177201 Google Scholar Wang Z L, Zhang Z H, Zhao Z, Shao R W, Sui M L 2018 Acta Phys. Sin. 67 177201 Google Scholar
[10]	Golan G, Axelevitch A, Sigalov B, Gorenstein B 2003 Microelectron. J. 34 255 Google Scholar
[11]	Chen S, Ma H, Dai J, Yi X 2007 Appl. Phys. Lett. 101 117
[12]	邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武 2013 物理学报 62 217201 Google Scholar Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 Google Scholar
[13]	Yang Z, Ko C, Ramanathan S 2011 Annu. Rev. Mater. Res. 41 337 Google Scholar
[14]	罗明海, 徐马记, 黄其伟, 李派, 何云斌 2016 物理学报 65 047201 Google Scholar Luo M H, Xu M J, Huang Q W, Li P, He Y B 2016 Acta Phys. Sin. 65 047201 Google Scholar
[15]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.: Condens. Matter 12 8837 Google Scholar
[16]	Anagnostou D E, Teeslink T S, Torres D, Sepúlveda N 2016 IEEE International Symposium on Antenna and Propagation Pajardo, June 26-July 1 2016, p1055
[17]	Ding F, Zhong S M, Bozhevolnyi S I 2018 Adv.Optical Mater. 2018 1701204
[18]	Anagnostou D E, Goussetis G, Torres D, Sepulveda N 2017 International Workshop on Antenna Technology: Small Antennas, Innovative Structures, and Applications (iWAT) Athens, Greece, May 01, 2017 p146
[19]	Solyankin P M, Esaulkov M N, Sidoro A Y, Shkurinov A P, Luo Q, Zhang X C 2015 40th International Conference on Infrared Milimeter and Terahertz Waves(IRMMW-THz) Fajardo, Aug. 23—28 2015, p2162
[20]	孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 物理学报 62 017202 Google Scholar Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 Google Scholar
[21]	Vitale W A, Tamagnone M, Émond N, Drogoff B L, Capdevila S, Skrivervik A, Chaker M, Mosig J R, Ionescu A M 2017 Nature 7 41546
[22]	Hashemi M R, Yang S, Jarra M, Wang T Y, Sepulveda N 2015 IEEE International Symposium on Antennas and Propagation&USNC/URSI National Radio Science Meeting Vancouver, BC, Canada, July 19-24 2015 p77
[23]	Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Dev. Lett. 34 220 Google Scholar
[24]	Valle J, Kalcheim Y, Trastoy J, Charnukha A, Basov D N, Schuller I K 2017 Phys. Rev. Applied 8 054041 Google Scholar
[25]	Won S, Lee S Y, Hwang J, Park J, Seo H 2017 Electron. Mater. Lett. 14 14
[26]	Lu P, Qu Z M, Wang Q G, Wang Y, Cheng W 2018 e-Polymers 18 85 Google Scholar
[27]	Qu Z M, Lu P, Yuan Y, Wang Q G 2018 IOP Conference Series: Materials Science and Engineering 301 012013 Google Scholar
[28]	雷忆三, 孙丽君 2012 现代工业经济和信息化 18 74 Lei Y S, Sun L J 2012 Modern Industrial Economy and Informationization 18 74
[29]	刘嘉玮, 王建江, 许宝才 2017 功能材料 48 10029 Liu J W, Wang J J, Xu B C 2017 Journal of Functional Materals 48 10029
[30]	Stefanovich G, Pergament A, Kazakova E 2000 Tech. Phys. Lett. 26 478 Google Scholar
[31]	Karakotsou C, Kalomiros J, Hanias M, Anagnostopoulos A, Spyridelis J 1992 Phys. Rev. B: Condens. Matter 45 11627 Google Scholar
[32]	Baum P, Yang D S, Zewail A H 2007 Science 318 788 Google Scholar
[33]	Wu B, Zimmers A, Aubin H, Ghosh R, Liu Y, Lopez R 2011 Phys. Rev. B: Condens. Matter 84 241410 Google Scholar
[34]	Kim H T, Chae B G, Youn D H, Kim G, Kang K Y, Lee S J, Kim K, Lim Y S 2005 Appl. Phys. Lett. 86 242101 Google Scholar
[35]	Kim H T, Kim B J, Choi S, Chae B G, Lee Y W, Driscoll T, Qazilbash M M, Basov D 2010 J. Appl. Phys. 107 023702 Google Scholar
[36]	Leroy J, Crunteanu A, Bessaudou A, Cosset F, Champeaux C, Orlianges J C 2012 Appl. Phys. Lett. 100 213507 Google Scholar
[37]	李昂, 王庆国, 王腾, 王研, 成伟 2016 兵器材料科学与工程 39 52 Li A, Wang Q G, Wang T, Wang Y, Cheng W 2016 Ordnance Material Science and Engineering 39 52
[38]	Shan S H, Wang Q G, Qu Z M, Cheng W, Li A 2017 Advances in Engineering Research 110 129
[39]	Sun X N, Wang Q G, He C A, Qu Z M 2018 3rd International Conference on Materials Science Resource and Environment Engineering Chongqing, October 26-28, 2018 p030001-1
[40]	Nakano M, Shibuya K, Okuyama D, Hatano T, Ono S, Kawasaki M, Iwasa Y, Tokura Y 2012 Nature 487 459 Google Scholar
[41]	Chu Q Q, Song Z Y, Liu Q H 2018 Appl. Phys. Express 11 082203
[42]	张娇, 李毅, 刘志敏, 李政鹏, 黄雅琴, 裴江恒, 方宝英, 王晓华, 肖寒 2017 物理学报 66 238101 Google Scholar Zhang J, Li Y, Liu Z M, Li Z P, Huang Y Q, Pei J H, Fang B Y, Wang X H, Xiao H 2017 Acta Phys. Sin. 66 238101 Google Scholar
[43]	Cho C R, Cho S, Vadim S, Jung R, Yoo I 2006 Thin Solid Films 495 375 Google Scholar
[44]	Ruzmetov D, Gopalakrishnan G, Deng J, Narayanamurti V, Ramanathan S 2009 J. Appl. Phys. 106 50
[45]	Hao R, Li Y, Liu F, Sun Y, Tang J, Chen P, Jiang W, Wu Z, Xu T, Fang B 2016 Infrared Phys. Tech. 75 82 Google Scholar
[46]	He X F, Xu J, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J 2015 Appl. Phys. Lett. 106 093106 Google Scholar
[47]	Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76 Google Scholar
[48]	Michael F B, Buckman A B, Rodger M W, Thierny L, Patrick G, Alain B 1995 J. Appl. Phys. 79 2404
[49]	山世浩, 王庆国, 曲兆明, 成伟, 李昂 2018 材料导报 32 870 Google Scholar Shan S H, Wang Q G, Qu Z M, Cheng W, Li A 2018 Mater. Rev. 32 870 Google Scholar
[50]	王庆国, 何长安, 曲兆明, 山世浩, 李昂, 成伟, 王妍 2018 安全与电磁兼容 4 14 Wang Q G, He C A, Qu Z M, Shan S H, Li A, Cheng W, Wang Y 2018 Safety and EMC 4 14
[51]	陈飞, 黄康, 顾聪聪, 徐晓峰 2016 东华大学学报(自然科学版) 42 131 Google Scholar Chen F, Huang K, Gu C C, Xu X F 2016 Journal of Donghua University, Natural Sciences 42 131 Google Scholar
[52]	付学成, 李金华, 谢建生, 袁宁一 2010 红外技术 32 173 Google Scholar Fu X C, Li J H, Xie J S, Yuan N Y 2010 Infrared Technology 32 173 Google Scholar
[53]	Ji C H, Wu Z M, Wua X F, Wang J, Liu X C, Gou J, Zhou H X, Yao W, Jiang Y D 2018 Appl. Surf. Sci. 455 622 Google Scholar
[54]	Dai L, Chen S, Liu J J, Gao Y F, Zhou J D, Chen Z, Cao C X, Luo H J, Kanehira M 2013 Phys.Chem. Chem.Phys. 15 11723 Google Scholar
[55]	吕维忠, 黄德贞, 罗仲宽, 刘波 2015 深圳大学学报理工版 32 385 Lv W Z, Huang D Z, Luo Z K, Liu B 2015 Journal of Shenzhen University Science and Engineering 32 385
[56]	Lu S W, Hou L S, Gan F X 1999 Thin Solid Films 353 40 Google Scholar
[57]	Jin P, Nakao S, Tanemura S 1998 Thin Solid Films 324 151 Google Scholar
[58]	Zhang K K, Pan G Y, Dang Y Y, Qi W Y, Liu Q, Li Y B, Liu J C 2017 3rd Annual 2017 International Conference on Sustainable Development (ICSD2017) Tianjin, China, July 14-16, 2017 p164
[59]	Rajeswaran B, Umarji A M 2016 AIP Advances 6 035215 Google Scholar
[60]	山世浩, 王庆国, 曲兆明 2017 兵器材料科学与工程 40 40 Shan S H, Wang Q G, Qu Z M 2017 Ordnance Material Science and Engineering 40 40
[61]	Liao G M, Chen S, Fan L L, Chen Y L, Wang X Q, Ren H, Zhang Z M, Zou C W 2016 AIP Advances 6 045014−1
[62]	Kumar S, Pickett M D, Strachan J P, Gibson G, Nishi Y, Williams R S 2013 J. Adv. Mater. 25 6128 Google Scholar
[63]	Freeman E, Stone G, Shukla N, Paik H, Moyer J A, Cai Z, Wen H, Engel-Herbert R, Schlom D G, Gopalan V 2013 Appl. Phys. Lett. 103 263109 Google Scholar
[64]	Singh S, Horrocks G, Marley P M, Shi Z, Banerjee S, Sambandamurthy G 2015 Phys. Rev. B: Condens. Matter 92 155121 Google Scholar
[65]	Bongjin S M, Yoon J, Mo S K, Chen K, Nobumichi T, Dejoie C, Kunz M, Liu Z, Park C, Moon K, Ju H 2013 Appl. Phys. Lett. 103 061902 Google Scholar
[66]	Li D, Sharma A A, Gala D K, Shukla N, Paik H, Datta S, Schlom D G, Bain J A, Skowronski M 2016 ACS Appl. Mater. Inter. 8 12908 Google Scholar
[67]	Stoliar P, Rozenberg M, Janod E, Corraze B, Tranchant J, Cario L 2014 Phys. Rev. B 90 045146 Google Scholar
[68]	Gray A X, Hoffmann M C, Jeong J, Aetukuri N P, Zhu D, Hwang H Y, Brandt N C, Wen H, Sternbach A J, Bonetti S, Reid A H, Kukreja R, Graves C, Wang T, Granitzka P, Chen Z, Higley D J, Chase T, Jal E, Abreu E, Liu M K, Weng T C, Sokaras D, Nordlund D, Chollet M, Alonso-Mori R, Lemke H, Glownia J M, Trigo M, Zhu Y, Ohldag H, Freeland J W, Samant M G, Berakdar J, Averitt R D, Nelson K A, Parkin S S P, Dürr H A 2018 Phys. Rev. B: Condens. Matter 98 045104 Google Scholar
[69]	Rozen J, Lopez R, Haglund R F, Feldman L C 2006 Appl. Phys. Lett. 88 081902 Google Scholar
[70]	Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Sun J Y, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750 Google Scholar
[71]	梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达 2012 纳米技术与精密工程 10 160 Google Scholar Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160 Google Scholar
[72]	Matsunami D, Fujita A 2015 Appl. Phys. Lett. 106 4494
[73]	Shi Y, Chen L Q 2019 Phys. Rev. Appl. 11 014059 Google Scholar
[74]	Zhang Y, Ramanathan S 2011 Solid-State Electron. 62 161 Google Scholar
[75]	Gopalakrishnan G, Ruzmetov D, Ramanathan S 2009 J. Mater. Sci. Lett. 44 5345 Google Scholar
[76]	Sakai J, Kurisu M 2008 Phys. Rev. B: Condens. Matter 78 033106 Google Scholar
[77]	Joushaghani A, Jeong J, Paradis S, Alain D, Stewart Aitchison J, Poon J K 2014 Appl. Phys. Lett. 104 221904 Google Scholar

[1]	Wang Jing-Li, Dong Xian-Chao, Yin Liang, Yang Zhi-Xiong, Wan Hong-Dan, Chen He-Ming, Zhong Kai. Vanadium dioxide based terahertz dual-frequency multi-function coding metasurface. Acta Physica Sinica, 2023, 72(9): 098101. doi: 10.7498/aps.72.20222321
[2]	Che Jia-Yin, Chen Chao, Li Wei-Yan, Li Wei, Chen Yan-Jun. Advances in response time of strong-field ionization of atoms. Acta Physica Sinica, 2023, 72(19): 193301. doi: 10.7498/aps.72.20230983
[3]	Ding Fei-Xiang, Rong Xiao-Hui, Wang Hai-Bo, Yang Yang, Hu Zi-Lin, Dang Rong-Bin, Lu Ya-Xiang, Hu Yong-Sheng. Phase transitions of Na-ion layered oxide materials and their influence on properties. Acta Physica Sinica, 2022, 71(10): 108801. doi: 10.7498/aps.71.20220291
[4]	Yan Zhong-Bao, Sun Shuai, Zhang Shuai, Zhang Yao, Shi Wei, Sheng Quan, Shi Chao-Du, Zhang Jun-Xiang, Zhang Gui-Zhong, Yao Jian-Quan. Effect of phase transition of vanadium dioxide on resonance characteristics of terahertz anti-resonant fiber and its applications. Acta Physica Sinica, 2021, 70(16): 168701. doi: 10.7498/aps.70.20210084
[5]	Li Jia-Hui, Zhang Ya-Ting, Li Ji-Ning, Li Jie, Li Ji-Tao, Zheng Cheng-Long, Yang Yue, Huang Jin, Ma Zhen-Zhen, Ma Cheng-Qi, Hao Xuan-Ruo, Yao Jian-Quan. Terahertz coding metasurface based vanadium dioxide. Acta Physica Sinica, 2020, 69(22): 228101. doi: 10.7498/aps.69.20200891
[6]	Sun Xiao-Ning, Qu Zhao-Ming, Wang Qing-Guo, Yuan Yang. Voltage induced phase transition of polyethene glycol composite film filled with VO₂ nanoparticles. Acta Physica Sinica, 2020, 69(24): 247201. doi: 10.7498/aps.69.20200834
[7]	Yang Pei-Di, Ouyang Chen, Hong Tian-Shu, Zhang Wei-Hao, Miao Jun-Gang, Wu Xiao-Jun. Study of phase transition of single crystal and polycrystalline vanadium dioxide nanofilms by using continuous laser pump-terahertz probe technique. Acta Physica Sinica, 2020, 69(20): 204205. doi: 10.7498/aps.69.20201188
[8]	Wang Ze-Lin, Zhang Zhen-Hua, Zhao Zhe, Shao Rui-Wen, Sui Man-Ling. Mechanism of electrically driven metal-insulator phase transition in vanadium dioxide nanowires. Acta Physica Sinica, 2018, 67(17): 177201. doi: 10.7498/aps.67.20180835
[9]	Gu Yan-Ni, Wu Xiao-Shan. Oxygen vacancy induced band gap narrowing of the low-temperature vanadium dioxide phase. Acta Physica Sinica, 2017, 66(16): 163102. doi: 10.7498/aps.66.163102
[10]	Luo Ming-Hai, Xu Ma-Ji, Huang Qi-Wei, Li Pai, He Yun-Bin. Research progress of metal-insulator phase transition mechanism in VO2. Acta Physica Sinica, 2016, 65(4): 047201. doi: 10.7498/aps.65.047201
[11]	Xiong Ying, Wen Qi-Ye, Tian Wei, Mao Qi, Chen Zhi, Yang Qing-Hui, Jing Yu-Lan. Researches on the electrical properties of vanadium oxide thin films on Si substrates. Acta Physica Sinica, 2015, 64(1): 017102. doi: 10.7498/aps.64.017102
[12]	Yu Hai-Ling, Zhu Jia-Qi, Cao Wen-Xin, Han Jie-Cai. Process in preparation of metal-catalyzed graphene. Acta Physica Sinica, 2013, 62(2): 028201. doi: 10.7498/aps.62.028201
[13]	Lu Zhi-Peng, Zhu Wen-Jun, Lu Tie-Cheng. Ab initio study of the bcc-to-hcp transition mechanism in Fe under pressure. Acta Physica Sinica, 2013, 62(5): 056401. doi: 10.7498/aps.62.056401
[14]	Zheng Ya-Jian, Xuan Wen-Tao, Lu Da-Quan, Ouyang Shi-Gen, Hu Wei, Guo Qi. Power controlled short-range interactions between strongly nonlocal spatial soliton. Acta Physica Sinica, 2010, 59(2): 1075-1081. doi: 10.7498/aps.59.1075
[15]	Hou Li-Fei, Li Fang, Yuan Yong-Teng, Yang Guo-Hong, Liu Shen-Ye. Chemical vapor deposited diamond detectors for soft X-ray power measurement. Acta Physica Sinica, 2010, 59(2): 1137-1142. doi: 10.7498/aps.59.1137
[16]	Wang Chang-Lei, Tian Zhen, Xing Qi-Rong, Gu Jian-Qiang, Liu Feng, Hu Ming-Lie, Chai Lu, Wang Qing-Yue. Photo-induced insulator-metal transition of silicon-based VO2 nanofilm by THz time domain spectroscopy. Acta Physica Sinica, 2010, 59(11): 7857-7862. doi: 10.7498/aps.59.7857
[17]	Chen Chang-Hong, Huang De-Xiu, Zhu Peng. Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H films. Acta Physica Sinica, 2007, 56(9): 5221-5226. doi: 10.7498/aps.56.5221
[18]	Tan Song-Lin, Zhang Hui, Cui Wen-Dong, Yuan Yuan, Zhang Peng-Xiang. Laser induced thermoelectric voltage effect in La0.67Pb0.33MnO3 thin films doped with Ag. Acta Physica Sinica, 2006, 55(8): 4226-4231. doi: 10.7498/aps.55.4226
[19]	Wang Li-Xia, Li Jian-Ping, He Xiu-Li, Gao Xiao-Guang. Fabrication of vanadium dioxide films at low temperature and researches on properties of the films. Acta Physica Sinica, 2006, 55(6): 2846-2851. doi: 10.7498/aps.55.2846
[20]	CHEN CHANG-HONG, YI XIN-JIAN, XIONG BI-FENG. INFRARED RESPONSIVITY OF UNCOOLED VO2-BASED THIN FILMS BOLOMETER. Acta Physica Sinica, 2001, 50(3): 450-452. doi: 10.7498/aps.50.450

Catalog

Vol. 68, Issue 10 - 2019-05-20

Metrics

Abstract views: 11101
PDF Downloads: 377
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Research progress of metal-insulator phase transition in VO₂ induced by electric field

Abstract

Authors and contacts

Corresponding author: Qu Zhao-Ming, iamqzm3990@163.com ; Liu Shang-He, liushh@cae.cn

FullText HTML : translate this paragraph

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Research progress of metal-insulator phase transition in VO2 induced by electric field

Abstract

Authors and contacts

Corresponding author: Qu Zhao-Ming, iamqzm3990@163.com ; Liu Shang-He, liushh@cae.cn

FullText HTML : translate this paragraph

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About

Research progress of metal-insulator phase transition in VO₂ induced by electric field