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Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices

Zhang Zhan-Gang Lei Zhi-Feng Tong Teng Li Xiao-Hui Wang Song-Lin Liang Tian-Jiao Xi Kai Peng Chao He Yu-Juan Huang Yun En Yun-Fei

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Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices

Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei
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  • Abstract views:  9275
  • PDF Downloads:  151
  • Cited By: 0
Publishing process
  • Received Date:  08 August 2019
  • Accepted Date:  20 December 2019
  • Published Online:  05 March 2020

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