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The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances

Liu Nai-Zhang Zhang Xue-Bing Yao Ruo-He

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The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances

Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He
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  • Abstract views:  6921
  • PDF Downloads:  162
  • Cited By: 0
Publishing process
  • Received Date:  20 December 2019
  • Accepted Date:  31 January 2020
  • Published Online:  05 April 2020

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