Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing

Luo Chang-Wei; Qiu Meng-Lin; Wang Guang-Fu; Wang Ting-Shun; Zhao Guo-Qiang; Hua Qing-Song

doi:10.7498/aps.69.20200029

Abstract

The optical and electrical properties of ZnO related on the type and the concentration of defects in ZnO crystal. Ion implantation and annealing can change the type and the concentration of defects in ZnO. To understand the variation of defects in ZnO during ion implantation and after different temperature annealing, in situ luminescence measurements of ZnO crystal samples were carried out by ion beam induced luminescence (IBIL) during ion implantation of 2 MeV H⁺ and then after annealing at 473 K and 800 K in vacuum on the GIC4117 tandem accelerator in Beijing Normal University.IBIL spectra of ZnO showtwo emission peaks: UV emission, which is called near band emission (NBE), and visible emission, which is called deep band emission (DBE).The high-intensity of DBE and weak NBE of IBIL spectra of ZnOmay be due to the NBE is intrinsic to ZnO samples and therefore is just visibly observed from samples that are virtually defect-free. With the ion implantation, the destruction of the crystal structure and the arising of a mass of defects, inducing the weak intensity NBE and intense DBE.In addition, the overall IBIL spectra of ZnOreveal decrease intensity with the ion fluence,which indicates that the concentration of luminescence centersdecreases duringion implantation.With the H⁺ fluence, the concentration of the point defects increases. The point defects migrate and subsequently agglomerate into larger defect clusters. These defect clusters serve as traps for catching electrons and holes, which result in the quenching of luminescence centres. Annealing can help todecompose the defect clusters and repair the defects of crystal. However, amounts of defects and clusters still remain in the irradiated sample annealed at 473 K in vacuum, which acted as nonradiative center and suppress the luminescence induced weak intensity of IBIL. Annealing the sample at 800 K in vacuum may facilitate the decomposition of defect clusters during ion irradiation to point defects and the point defect return to the lattice position that can reduce the nonequilibrium defects inside the crystal and improve the crystallinity of the crystal, which increase the intensity of its IBIL.

Keywords:

Authors and contacts

1.
Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
2.
Beijing Radiation Center, Beijing 100875, China

Corresponding author: Qiu Meng-Lin, 11132018326@bnu.edu.cn ; Wang Guang-Fu, 88088@bnu.edu.cn ;

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No.11905010), the Fundamental Research Funds for the Central Universities, China(Grant No.2018NTST04), and the China Postdoctoral Science Foundation funded project(Grant No.2019M650526)

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References

[1]	Huddle J R, Grant P G, Ludington A R, Foster R L 2007 Nucl. Instrum. Methods Phys. Res. Sect. B 261 475 Google Scholar
[2]	Rodrigues J, Miranda S M C, Peres M, et al. 2013 Nucl. Instrum. Methods Phys. Res. Sect. B 306 201 Google Scholar
[3]	Zhang X M, Lu M Y, Zhang Y, et al. 2009 Adv. Mater. 21 2767 Google Scholar
[4]	Li L, Yang H, ZhaoH, Yu J, Ma J, An L 2010 Appl. Phys. A-Mater. Sci. Process. 98 635 Google Scholar
[5]	Epie E N, Chu W K 2016 Appl. Surf. Sci. 371 28 Google Scholar
[6]	邢光建, 李钰梅, 江伟, 韩彬, 王怡, 武光明 2009 真空 46 41 Xing G J, Li Y M, Jiang W, Han B, Wang Y, Wu G M 2009 Vacuum 46 41
[7]	Zhou Z, Kato K, Komaki T, Yoshino M, Morinaga M 2004 Int. J. Hydrog. Energy 29 323 Google Scholar
[8]	潘峰, 丁斌峰, 法涛, 成枫锋, 周生强, 姚淑德 2011 物理学报 60 108501 Google Scholar Pan F, Ding B F, Fa T, Cheng F F, Zhou S Q, Yao S D 2011 Acta Phys. Sin. 60 108501 Google Scholar
[9]	李重阳, 邱诚, 柳丹, 叶霞, 王栋, 陈志权 2013 武汉大学学报(理学版) 04 96 Li C Y, Qu C, Liu D, Ye X, Wang D, Chen Z Q 2013 Journal of Wuhan University (Natural Science Edition) 04 96
[10]	徐自强, 邓宏, 谢娟, 李燕, 陈航, 祖小涛, 薛书文 2006 强激光与粒子束 18 169 Xu Z Q, Deng H, Xie J, Li Y, Chen H, Zu X T, Xue S W 2006 High Power Laser Part. Beams HPLPB 18 169
[11]	郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏 2019 中国激光 46 0403002 Google Scholar Guo D S, Chen Z N, Wang D K, Tang J L, Fang X, Fang D, Lin F Y, Wang X W, Wei Z P 2019 Chin. J. Lasers 46 0403002 Google Scholar
[12]	朱影 2018 硕士学位论文 (杭州: 浙江大学) Zhu Y 2018 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese)
[13]	仇猛淋 2017 中国核学会中国威海 2017 10月16日—18日第6页 Qiu M L 2017 Proceedings of Chinese Nuclear Society Weihai, China, October 16–18, 2017 p6 (in Chinese)
[14]	仇猛淋, 王广甫, 褚莹洁, 郑力, 胥密, 殷鹏 2017 物理学报 66 207801 Google Scholar Qiu M L, Wang GF, Chu YJ, Zheng L, Xu M, Yin P 2017 Acta Phys. Sin. 66 207801 Google Scholar
[15]	Cui M, Zhang Z, Wang Y, Finch A, Townsend P D 2018 Luminescence 33 4 Google Scholar
[16]	Validzic I, Comor M, Ahrenkiel S P, Comor M I 2015 Metall. Mater. Trans. A 46 3679 Google Scholar
[17]	Trinh T A, Hong I S, Lee H R, Cho Y S 2009 Nucl. Instrum. Methods Phys. Res. Sect. B 267 3535 Google Scholar
[18]	Chen Z Q, Sekiguchi T, Yuan X L, Maekawa M, KawasusoA 2004 J. Phys.Condens. Matter 16 S293 Google Scholar
[19]	Hu Y, Xue X, Wu Y 2014 Radiat. Phys. Chem. 101 20 Google Scholar
[20]	Gruzintsev A N, Yakimov E E 2005 Inorg. Mater. 41 725 Google Scholar

Cited By

图 1 高低温IBIL 装置简图

Figure 1. Schematic of the IBIL experimental setup for high- and low-temperature applications.

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图 2 常温下ZnO的IBIL光谱随离子注量演变情况

Figure 2. The Normalized IBIL spectra of ZnO at various fluences at room temperature.

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图 3 辐照后的样品在473 K退火后的IBIL光谱

Figure 3. The Normalized IBIL of the sample with irradiation by 2 MeV H⁺ and annealing at 473 K.

DownLoad: Full-Size Img PowerPoint

图 4 辐照后的样品在800 K退火后的IBIL光谱

Figure 4. The Normalized IBIL of the sample with irradiation by 2 MeV H⁺ and annealing at 800 K.

DownLoad: Full-Size Img PowerPoint

图 5 473 K和800 K退火后的样品的NBE强度随离子注量的演变情况

Figure 5. Evolutions of the luminescence peak intensitiesof NBE with the irradiation fluence at annealingtemperatures of 473 K and 800 K for irradiated samples.

DownLoad: Full-Size Img PowerPoint

图 6 473 K真空退火3 h后的样品的IBIL光谱

Figure 6. The Normalized IBIL of the sample with annealing at 473 K in vacuum for 3 h.

DownLoad: Full-Size Img PowerPoint

图 7 473 K真空退火3 h后再辐照的样品, 在800 K真空退火3 h后的IBIL光谱

Figure 7. The Normalized IBIL of the sample annealed at 473 K in vacuum for 3 h was irradiated by 2 MeV H⁺, and then was annealed at 800 K in vacuum in vacuum for 3 h.

DownLoad: Full-Size Img PowerPoint

图 8 473 K退火和473 K退火后辐照, 再800 K退火的样品的NBE强度随离子注量的演变情况

Figure 8. Evolutions of the luminescence peak intensities of NBE with the irradiation fluence at annealing temperatures of 473 K for virgin samples and annealing temperature of 800 K for irradiated samples which has been annealed at 473 K.

DownLoad: Full-Size Img PowerPoint

[1]	Huddle J R, Grant P G, Ludington A R, Foster R L 2007 Nucl. Instrum. Methods Phys. Res. Sect. B 261 475 Google Scholar
[2]	Rodrigues J, Miranda S M C, Peres M, et al. 2013 Nucl. Instrum. Methods Phys. Res. Sect. B 306 201 Google Scholar
[3]	Zhang X M, Lu M Y, Zhang Y, et al. 2009 Adv. Mater. 21 2767 Google Scholar
[4]	Li L, Yang H, ZhaoH, Yu J, Ma J, An L 2010 Appl. Phys. A-Mater. Sci. Process. 98 635 Google Scholar
[5]	Epie E N, Chu W K 2016 Appl. Surf. Sci. 371 28 Google Scholar
[6]	邢光建, 李钰梅, 江伟, 韩彬, 王怡, 武光明 2009 真空 46 41 Xing G J, Li Y M, Jiang W, Han B, Wang Y, Wu G M 2009 Vacuum 46 41
[7]	Zhou Z, Kato K, Komaki T, Yoshino M, Morinaga M 2004 Int. J. Hydrog. Energy 29 323 Google Scholar
[8]	潘峰, 丁斌峰, 法涛, 成枫锋, 周生强, 姚淑德 2011 物理学报 60 108501 Google Scholar Pan F, Ding B F, Fa T, Cheng F F, Zhou S Q, Yao S D 2011 Acta Phys. Sin. 60 108501 Google Scholar
[9]	李重阳, 邱诚, 柳丹, 叶霞, 王栋, 陈志权 2013 武汉大学学报(理学版) 04 96 Li C Y, Qu C, Liu D, Ye X, Wang D, Chen Z Q 2013 Journal of Wuhan University (Natural Science Edition) 04 96
[10]	徐自强, 邓宏, 谢娟, 李燕, 陈航, 祖小涛, 薛书文 2006 强激光与粒子束 18 169 Xu Z Q, Deng H, Xie J, Li Y, Chen H, Zu X T, Xue S W 2006 High Power Laser Part. Beams HPLPB 18 169
[11]	郭德双, 陈子男, 王登魁, 唐吉龙, 方铉, 房丹, 林逢源, 王新伟, 魏志鹏 2019 中国激光 46 0403002 Google Scholar Guo D S, Chen Z N, Wang D K, Tang J L, Fang X, Fang D, Lin F Y, Wang X W, Wei Z P 2019 Chin. J. Lasers 46 0403002 Google Scholar
[12]	朱影 2018 硕士学位论文 (杭州: 浙江大学) Zhu Y 2018 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese)
[13]	仇猛淋 2017 中国核学会中国威海 2017 10月16日—18日第6页 Qiu M L 2017 Proceedings of Chinese Nuclear Society Weihai, China, October 16–18, 2017 p6 (in Chinese)
[14]	仇猛淋, 王广甫, 褚莹洁, 郑力, 胥密, 殷鹏 2017 物理学报 66 207801 Google Scholar Qiu M L, Wang GF, Chu YJ, Zheng L, Xu M, Yin P 2017 Acta Phys. Sin. 66 207801 Google Scholar
[15]	Cui M, Zhang Z, Wang Y, Finch A, Townsend P D 2018 Luminescence 33 4 Google Scholar
[16]	Validzic I, Comor M, Ahrenkiel S P, Comor M I 2015 Metall. Mater. Trans. A 46 3679 Google Scholar
[17]	Trinh T A, Hong I S, Lee H R, Cho Y S 2009 Nucl. Instrum. Methods Phys. Res. Sect. B 267 3535 Google Scholar
[18]	Chen Z Q, Sekiguchi T, Yuan X L, Maekawa M, KawasusoA 2004 J. Phys.Condens. Matter 16 S293 Google Scholar
[19]	Hu Y, Xue X, Wu Y 2014 Radiat. Phys. Chem. 101 20 Google Scholar
[20]	Gruzintsev A N, Yakimov E E 2005 Inorg. Mater. 41 725 Google Scholar

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