Multi-field manipulation in Hall balance

Zhang Jing-Yan; Dou Peng-Wei; Zhao Yun-Chi; Zhang Shi-Lei; Liu Jia-Qiang; Qi Jie; Lü Hao-Chang; Liu Ruo-Yang; Yu Guang-Hua; Jiang Yong; Shen Bao-Gen; Wang Shou-Guo

doi:10.7498/aps.70.20201799

Abstract

To break through the conventional binary storage based on spin valves and magnetic tunnel junctions, multi-state storage has been successfully achieved in Hall balance. Meanwhile, logic operation can be realized in the storage cell of Hall balance to improve the operation efficiency. Therefore, the concept of Hall balance will benefit the device integration, which provides an effective insight into fabricating the development of spintronics. In this topical review article, firstly the background of memory based on Hall balance is introduced. Secondly, the concept and recent progress of Hall balance are briefly summarized. Thirdly, the manipulation of anomalous Hall resistance ratio (HRR) and its physical mechanism is systematically investigated. Furthermore, magnetic skyrmions and their dynamics in Hall balance are presented in detail. Finally, the application of Hall balance to other kinds of materials is discussed and prospects its future.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
2.
State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
3.
School of Physical Science and Technology, Shanghai Technology University, Shanghai 201210, China

Corresponding author: Wang Shou-Guo, sgwang@ustb.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2019YFB2005800), the National Natural Science Foundation of China (Grant Nos. 11874082, 51625101, 51961145305, 51971026), and the Key Program of the Natural Science Foundation of Beijing, China (Grant No. Z190007)

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References

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Cited By

图 1 (a)磁性隧道结Fe(25)/MgO(3)/Fe(10)/IrMn(10) (厚度单位均为纳米)中的R-H输出曲线^[21]; (b)霍尔天平CoO(10)/[Co(0.3)/Pt(1)]₃/NiO(1.1)/Pt(0.6)/[Co(0.3)/Pt(1)]₃/CoO(10) (厚度单位均为纳米)中的R-H输出曲线

Figure 1. (a) R-H loops for the magnetic tunnel junction with the structure of Fe(25)/MgO(3)/Fe(10)/IrMn(10) (in nm)^[21]; (b) R-H loop for Hall balance with the structure of CoO(10)/[Co(0.3)/Pt(1)]₃/NiO(1.1)/Pt(0.6)/[Co(0.3)/Pt(1)]₃/CoO(10) (in nm).

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图 2 (a)正常霍尔效应和(b)反常霍尔效应原理图

Figure 2. Schematic of (a) ordinary Hall effect and (b) anomalous Hall effect.

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图 3 (a)基于NiO的霍尔天平R-H曲线; (b)基于霍尔天平的3D存储阵列示意图^[42]

Figure 3. (a) R-H loop for Hall balance based on NiO spacer; (b) schematic of 3D storage based on Hall balance^[42].

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图 4 基于霍尔天平存储单元的基本布尔逻辑运算输出曲线及真值表^[42]

Figure 4. Boolean logic operation in storage cell based on Hall balance and truth table ^[42].

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图 5 (a)自旋算盘设计示意图; (b)基于NiO隔离层的自旋算盘霍尔输出曲线^[44]

Figure 5. (a) Schematic of magnetic abacus memory; (b) Hall loop for the magnetic abacus based on NiO spacer^[44].

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图 6 (a)样品NiO(20)/[Co(0.4)/Pt(1.2)]/MgO/[Co(0.4)/Pt(1.2)]/NiO(1) (nm)的霍尔输出曲线; (b)样品NiO(50)/Pt(0.6)/[Co(0.3)/Pt(1)]/NiO/[Co(0.4)/Pt(1.2)] (单位: nm)的霍尔输出曲线^[42]

Figure 6. (a) Hall loop for the sample NiO(20)/[Co(0.4)/Pt(1.2)]/MgO/[Co(0.4)/Pt(1.2)]/NiO(1) (in nm); (b) Hall loop for the sample NiO(50)/Pt(0.6)/[Co(0.3)/Pt(1)]/NiO/[Co(0.4)/Pt(1.2)] (in nm) ^[42].

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图 7 (a)−(c)样品Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(t_NiO)/Pt(0.3)/[Co(0.4)/Pt(1)]₄ (厚度单位为纳米)的霍尔曲线; (d)−(f)样品Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(1.1)/Pt(0.3)/[Co(0.4)/Pt(t_Pt)]₄(厚度单位均为纳米)样品的霍尔输出曲线^[48]

Figure 7. (a)−(c) Hall loops for the sample Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(t_NiO)/Pt(0.3)/[Co(0.4)/Pt(1)]₄ (in nm); (d)−(f) Hall loops for the sample Pt(0.6)/[Co(0.4)/Pt(1)]₃/Co(0.4)/Pt(0.3)/NiO(1.1)/Pt(0.3)/[Co(0.4)/Pt(t_Pt)]₄ (in nm)^[48].

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图 8 (a)−(d)样品CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(t_NiO)/[Co(0.4)/Pt(0.6)]₄/CoO(3)(厚度单位为纳米)的霍尔回线^[48]

Figure 8. (a)−(d) Hall loops for the sample CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(t_NiO)/[Co(0.4)/Pt(0.6)]₄/CoO(3) (in nm)^[48].

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图 9 (a)样品CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3)(厚度单位均为纳米)低倍透射电镜照片; (b)上述样品的选区电子衍射花样照片^[48]

Figure 9. (a) Transmission electron microscope (TEM) image and (b) electron diffraction pattern for the sample CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3) (in nm)^[48].

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图 10 样品CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3)(厚度单位均为纳米)高分辨透射电镜照片^[48]

Figure 10. High resolution TEM image for the sample CoO(3)/[Pt(0.6)/Co(0.4)]₄/Pt(0.3)/NiO(1)/[Co(0.4)/Pt(0.6)]₄/CoO(3) (in nm)^[48]

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图 11 (a)−(d)样品CoO/[Co/Pt]₃/Co/Pt(t_B)/NiO(1.1)/[Co/Pt]₄/CoO(厚度单位为纳米)的霍尔回线^[49]

Figure 11. (a)−(d) Hall loops for sample CoO/[Co/Pt]₃/Co/Pt(t_B)/NiO(1.1)/[Co/Pt]₄/CoO (in nm)^[49]

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图 12 (a)−(d)样品CoO/[Co/Pt]₄/NiO(1.1)/Pt(t_T)/[Co/Pt]₄/CoO(厚度单位为纳米)的霍尔回线^[49]

Figure 12. (a)−(d) Hall loops for the sample CoO/[Co/Pt]₄/NiO(1.1)/Pt(t_T)/[Co/Pt]₄/CoO (in nm)^[49].

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图 13 (a), (b)Co/NiO界面和NiO/Co界面上高分辨Co 2p XPS图谱; (c)界面CoO_x/Co比率随Pt厚度变化规律; (d)界面Pt 4f结合能随界面Pt厚度变化规律^[49]

Figure 13. (a), (b) High resolution XPS Co 2p spectra at Co/NiO interface and NiO/Co interface; (c) interfacial CoO_x/Co content and (d) Pt 4f binding energy as a function of the Pt thickness at interfaces^[49].

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图 14 (a)霍尔天平的结构示意图; (b)具有铁磁耦合和反铁磁耦合霍尔天平的垂直膜面方向的磁滞回线; (c)霍尔天平的交换耦合场和(d)饱和磁化强度随NiO厚度变化规律^[88]

Figure 14. (a) Schematic of Hall balance in L-TEM measurement; (b) normalized M-H loops for the sample with ferromagnetic coupling and antiferromagnetic coupling, respectively; (c) shifted field and (d) saturation magnetization as a function of NiO thickness^[88].

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图 15 (a), (b)铁磁耦合和反铁磁耦合霍尔天平基态下的洛伦兹透射电镜照片; (c), (d)铁磁耦合和反铁磁耦合霍尔天平激励后的洛伦兹透射电镜照片^[88]

Figure 15. L-TEM images for Hall balance at ground state with (a) ferromagnetic coupling and (b) antiferromagnetic coupling, respectively. High density of skyrmions in a Hall balance after drawing excitation with (c) ferromagnetic coupling and (d) antiferromagnetic coupling, respectively^[88].

DownLoad: Full-Size Img PowerPoint

图 16 (a), (b)和(c)分别是不同角度下的霍尔天平中的磁性斯格明子^[88]

Figure 16. (a), (b), (c) Magnetic skyrmions in a Hall balance with various tilting angle^[88].

DownLoad: Full-Size Img PowerPoint

图 17 (a)和(b)分别是低场下和高场下具有反铁磁耦合霍尔天平的极化中子反射谱图; (c)具有反铁磁耦合的霍尔天平自旋结构示意图; (d)和(e)分别是低场下和高场下具有铁磁耦合霍尔天平的极化中子反射谱图; (f)具有铁磁耦合的霍尔天平自旋结构示意图^[88]

Figure 17. PNR spectra as a function of Q measured with in-plane (a) low and (b) high magnetic fields for the Hall balance with antiferromagnetic coupling; (c) schematic of the magnetic structure of the Hall balance with antiferromagnetic coupling; PNR spectra as a function of Q measured with in-plane (d) low and (e) high magnetic fields for the Hall balance with ferromagnetic coupling; (f) schematic of the magnetic structure of the Hall balance with ferromagnetic coupling^[88].

DownLoad: Full-Size Img PowerPoint

图 18 (a)具有不同层间耦合强度的霍尔天平中的基态和激励后的磁性斯格明子; (b)基态下霍尔天平中磁性斯格明子密度随E_IEC和θ变化的相图; (c)外部激励撤除后霍尔天平中磁性斯格明子个数随层间耦合强度的变化规律曲线^[88]

Figure 18. (a) Simulated skyrmions in a Hall balance with various E_IEC; (b) contour map of the skyrmion density as a function of E_IEC and θ without external excitation; (c) the skyrmion number as a function of E_IEC in Hall balance with drawing excitation^[88].

DownLoad: Full-Size Img PowerPoint

图 19 (a)不同温度下SRO/STO/SRO霍尔天平的反常霍尔曲线; (b)霍尔信号符号翻转温度附近的输出曲线放大图; (c) SRO/STO/SRO霍尔天平双通道霍尔电阻贡献解析图^[97]

Figure 19. (a) Hall loops for the SRO/STO/SRO Hall balance under various temperature; (b) enlarged Hall loops in the vicinity of the sign reversal temperature; (c) Hall resistance in SRO/STO/SRO Hall balance^[97].

DownLoad: Full-Size Img PowerPoint

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