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Effect of N-doping on performance of ${\boldsymbol\beta}$-Ga2O3 thin film solar-blind ultraviolet detector

Zhou Shu-Ren Zhang Hong Mo Hui-Lan Liu Hao-Wen Xiong Yuan-Qiang Li Hong-Lin Kong Chun-Yang Ye Li-Juan Li Wan-Jun

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Effect of N-doping on performance of ${\boldsymbol\beta}$-Ga2O3 thin film solar-blind ultraviolet detector

Zhou Shu-Ren, Zhang Hong, Mo Hui-Lan, Liu Hao-Wen, Xiong Yuan-Qiang, Li Hong-Lin, Kong Chun-Yang, Ye Li-Juan, Li Wan-Jun
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  • β-Ga2O3-based deep-ultraviolet photodetector (PD) has versatile civil and military applications especially due to its inherent solar-blindness. In this work, pristine and N-doped β-Ga2O3 thin films are prepared on c-plane sapphire substrates by radio frequency magnetron sputtering. The influences of N impurity on the micromorphology, structural and optical properties of β-Ga2O3 film are investigated in detail by scanning electron microscopy, X-ray diffraction, and Raman spectra. The introduction of N impurities not only degrades the crystal quality of β-Ga2O3 films, but also affects the surface roughness. The β-Ga2O3 films doped with N undergoes a transition from a direct optical band gap to an indirect optical band gap. Then, the resulting metal-semiconductor-metal (MSM) PD is constructed. Comparing with the pure β-Ga2O3-based photodetector, the introduction of N impurities can effectively depress dark current and improve response speed of the β-Ga2O3 device. The N-doped β-Ga2O3-based photodetector achieves a dark current of 1.08 × 10–11 A and a fast response speed (rise time of 40 ms and decay time of 8 ms), which can be attributed to the decrease of oxygen vacancy related defects. This study demonstrates that the acceptor doping provides a new opportunity for producing ultraviolet photodetectors with fast response for further practical applications.
      Corresponding author: Zhang Hong, zhh_2016@163.com ; Ye Li-Juan, ylj2592924@163.com ; Li Wan-Jun, liwj@cqnu.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11904041), the Natural Science Foundation of Chongqing, China(Grant Nos. cstc2020jcyj-msxmX0557, cstc2020jcyj-msxmX0533), and the Science and Technology Research Project of Chongqing Education Committee, China(Grant Nos. KJQN202000511, KJQN201900542)
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    Guo D Y, Li P G, Chen Z W, Wu Z P, Tang W H 2019 Acta Phys. Sin. 68 078501Google Scholar

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    Chen X, Ren F, Gu S, Ye J 2019 Photonics Res. 7 381Google Scholar

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    Kim J H, Han C Y, Lee K H, An K S, Song W, Kim J, Oh M S, Do Y R, Yang H 2014 Chem. Mater. 27 197

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    Tak B R, Garg M, Dewan S, Torres-Castanedo C G, Li K H, Gupta V, Li X H, Singh R 2019 J. Appl. Phys. 125 144501Google Scholar

    [42]

    Qian L X, Wu Z H, Zhang Y Y, Lai P T, Liu X Z, Li Y R 2017 ACS Photonics 4 2203Google Scholar

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  • 图 1  N掺杂β-Ga2O3薄膜的表面形貌和晶体结构 (a)—(d) SEM图; (e) XRD图谱; (f) Raman光谱

    Figure 1.  Surface morphology and crystal structure of N-doped β-Ga2O3 films: (a)−(d) SEM; (e) XRD; (f) Raman spectra.

    图 2  (a)不同浓度N掺杂β-Ga2O3薄膜的透射光谱; (b), (c) 在直接和间接带隙下利用Tauc公式外推光学带隙图

    Figure 2.  (a) Transmission spectra of β-Ga2O3 films doped with different N concentrations; (b), (c) Tauc plots for samples under assumptions of an indirect bandgap and a direct bandgap.

    图 3  (a)不同浓度N掺杂β-Ga2O3薄膜的室温光致发光谱; (b)局部放大图 (350−500 nm)

    Figure 3.  (a) Room temperature PL spectra of N-doped β-Ga2O3 films; (b) local enlarged view ranging from 350 to 500 nm.

    图 4  β-Ga2O3薄膜MSM型日盲紫外器件的光电特性 (a), (b) I-V特性曲线; (c), (d) 瞬态光响应特性曲线(偏压为10 V); (e), (f) 光响应时间拟合曲线

    Figure 4.  Photoresponse performance of the β-Ga2O3 film MSM photodetectors: (a), (b) I-V curves of the MSM photodetector; (c), (d) transient light response characteristic curve under the bias voltage of 10 V; (e), (f) exponential fitting of a single cycle at 10 V illuminated with 254 nm light.

    图 5  在254 nm光照下MSM型光电探测器的光响应能带示意图 (a)—(c)器件A; (d)—(f)器件C

    Figure 5.  Schematic energy band diagrams of MSM photodetector of samples A and C under 254 nm light illumination: (a)−(c) device A; (d)−(f) device C.

    表 1  不同N掺杂浓度β-Ga2O3薄膜的(–201)衍射峰和201.4 cm–1拉曼特征峰的半高宽

    Table 1.  Full width at half maximum (FWHM) of XRD diffraction peak and Raman peak.

    SampleFWHM of (–201) peak/(°)FWHM of 201.4 cm–1
    peak/cm–1
    A0.382.6
    B0.513.08
    C0.392.9
    D0.583.14
    DownLoad: CSV

    表 2  国内外Ga2O3薄膜基光电探测器的主要性能指标对比

    Table 2.  Comparison of the representative photoresponse metrics based on Ga2O3 film photodetectors.

    SamplesGrowthIdark/nAτr/sτd/sRef.
    β-Ga2O3Sputtering0.11 (10 V)0.31/1.520.05/0.91[9]
    β-Ga2O3MOCVD34 (10 V)7.308.05[40]
    β-Ga2O3PLD~1.20.59/2.40.15/1.6[41]
    a-Ga2O3Sputtering0.3386 (10 V)0.41/2.040.02/0.35[42]
    Ga2O3:ZnSputtering45 (10 V)17.2/1.234.03/46.10[38]
    Ga2O3:ZnMOCVD23 (30 V)3.21.4[43]
    Ga2O3:NCVD~0.1 (5 V)0.010.01[24]
    Ga2O3:MgSputtering0.0041 (10 V)0.33/8.840.02[34]
    Ga2O3:CePLD0.87/10.810.54/13.98[32]
    α/β-Ga2O3Sol–gel0.125 (15 V)0.04/0.870.02/1.00[44]
    β-Ga2O3Sputtering0.56 (10 V)0.51/3.040.07/0.08This work
    Ga2O3:NSputtering0.0108 (10 V)0.04/2.380.008/0.29This work
    DownLoad: CSV
  • [1]

    Pearton S J, Yang J C, Cary I V P H, Ren F, Kim J, Tadjer M J, Mastor M A 2018 Appl. Phys. Rev. 5 011301

    [2]

    郭道友, 李培刚, 陈政委, 吴真平, 唐为华 2019 物理学报 68 078501Google Scholar

    Guo D Y, Li P G, Chen Z W, Wu Z P, Tang W H 2019 Acta Phys. Sin. 68 078501Google Scholar

    [3]

    Chen X, Ren F, Gu S, Ye J 2019 Photonics Res. 7 381Google Scholar

    [4]

    Xu J, Zheng W, Huang F 2019 J. Mater. Chem. C 7 8753Google Scholar

    [5]

    Cicek E, McClintock R, Cho C Y, Rahnema B, Razeghi M 2013 Appl. Phys. Lett. 103 191108Google Scholar

    [6]

    Kim J H, Han C Y, Lee K H, An K S, Song W, Kim J, Oh M S, Do Y R, Yang H 2014 Chem. Mater. 27 197

    [7]

    Liao M Y, Sang L, Teraji T, Imura M, Alvarez J, Koide Y 2012 Jpn. J. Appl. Phys. 51 090115Google Scholar

    [8]

    Chen J X, Li X X, Ma H P, Huang W, Ji Z G, Xia C T, Lu H L, Zhang D W 2019 ACS Appl. Mater. Interfaces 11 32127Google Scholar

    [9]

    Wang J, Ye L J, Wang X, Zhang H, Li L, Kong C, Li W J 2019 J. Alloys Compd. 803 9Google Scholar

    [10]

    Zhang L H, Verma A, Xing H L, Jena D 2017 Jpn. J. Appl. Phys. 56 030304Google Scholar

    [11]

    马腾宇, 孔春阳, 李万俊, 何先旺, 胡慧, 黄利娟, 张红, 李泓霖, 叶利娟 2020 物理学报 69 108102Google Scholar

    Ma T Y, Kong C Y, Li W J, He X W, Hu H, Huang L J, Zhang H, Li H L, Ye L J 2020 Acta Phys. Sin. 69 108102Google Scholar

    [12]

    Guo D Y, Wu Z P, An Y H, Guo X C, Chu X L, Sun C L, Li L H, Li P C, Tang W H 2014 Appl. Phys. Lett. 105 023507Google Scholar

    [13]

    Qin Y, Li L H, Zhao X L, Tompa G S, Dong H, Jian G Z, He Q M, Tan P J, Hou X H, Zhang Z F, Yu S J, Sun H D, Xu G W, Miao X S, Xue K H, Long S B, Liu M 2020 ACS Photonics 7 812Google Scholar

    [14]

    Wang J, Xiong Y Q, Ye L J, Li W J, Qin G P, Ruan H B, Zhang H, Liang F, Kong C Y, Li H L 2021 Opt. Mater. 112 110808Google Scholar

    [15]

    Wang Q, Chen J, Huang P, Li M, Lu Y, Homewood K P, Chang G, Chen H, He Y B 2019 Appl. Surf. Sci. 489 101Google Scholar

    [16]

    Hu H D, Liu Y C, Han G Q, Fang C Z, Zhang Y F, Liu H, Wang Y B, Ye J D, Hao Y 2020 Nanoscale Res. Lett. 15 100Google Scholar

    [17]

    Chen Y P, Liang H W, Xia X C, Shen R S, Liu Y, Luo Y M, Du G T 2015 Appl. Surf. Sci. 325 258Google Scholar

    [18]

    Guo D Y, Qin X Y, Lü M, Shi H Z, Su Y L, Yao G S, Wang S L, Li C R, Li P G, Tang W H 2017 Electron. Mater. Lett. 13 483Google Scholar

    [19]

    Chen J W, Tang H L, Liu B, Zhang Z X, Gu M, Zhu Z C, Xu Q, Xun J, Zhou L D, Chen L, Ou Yang X P 2021 ACS Appl. Mater. Interfaces 13 2879Google Scholar

    [20]

    Yao Z R, Tang K, Xu Z H, Ye J D, Zhun S M, Gu S L 2016 Nanoscale Res. Lett. 11 501Google Scholar

    [21]

    Saravanakumar B, Mohan R, Thiyagarajan K, Kim S J 2013 J. Alloys Compd. 580 538Google Scholar

    [22]

    Dong L P, Jia R X, Li C, Xin B, Zhang Y M 2017 J. Alloys Compd. 712 379Google Scholar

    [23]

    Chang L W, Li C F, Hsieh Y T, Liu C M, Cheng Y T, Yeh J W, Shih H C 2011 J. Electrochem. Soc. 158 D136Google Scholar

    [24]

    Jiang Z X, Wu Z Y, Ma C C, Deng J N, Zhang H, Xu Y, Ye J D, Fang Z L, Zhang G Q, Kang J Y, Zhang T Y 2020 Mater. Today Phys. 14 100226Google Scholar

    [25]

    Luan S Z, Dong L P, Ma X F, Jia R X 2020 J. Alloys Compd. 812 152026Google Scholar

    [26]

    Xie C, Lu X T, Liang Y, Chen H H, Wang L, Wu C Y, Wu D, Yang W H, Luo L B 2021 J. Mater. Sci. Technol. 72 189Google Scholar

    [27]

    Shen H, Baskaran K, Yin Y N, Tian K, Duan L B, Zhao X R, Tiwari A 2020 J. Alloys Compd. 822 153419Google Scholar

    [28]

    Rao R, Rao A M, Xu B, Dong J, Sharma S, Sunkara M K 2005 J. Appl. Phys. 98 094312

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    Chen Y C, Lu Y J, Liu Q, Lin C N, Guo J, Zang J H, Tian Y Z, Shan C X 2019 J. Mater. Chem. C 7 2557Google Scholar

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    He T, Zhang X D, Ding X Y, Ding X Y, Sun C, Zhao Y K, Yu Q, Ning J Q, Wang R X, Yu G H, Lu S L, Zhang K, Zhang X P, Zhang B S 2019 Adv. Opt. Mater. 7 1801563Google Scholar

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    Zhao Z C, Yang C L, Meng Q T, Wang M S, Ma X G 2019 Spectrochim. Acta, Part A 211 71Google Scholar

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    Beaton D A, Alberi K, Fluegel B, Mascarenhas A, Reno J L 2013 Appl. Phys. Express 6 071201Google Scholar

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    Zhao W R, Yang Y, Hao R, Liu F F, Wang Y, Tan M, Tang J, Ren D Q, Zhao D Y 2011 J. Hazard. Mater. 192 1548Google Scholar

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    Zhao X L, Wu Z P, Zhi Y S, An Y H, Cui W, Li L H, Tang W H 2017 J. Phys. D: Appl. Phys. 50 085102Google Scholar

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    Zhang D, Zheng W, Lin R C, Li T T, Zhang Z J, Huang F 2018 J. Alloys Compd. 735 150Google Scholar

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    Tak B R, Garg M, Dewan S, Torres-Castanedo C G, Li K H, Gupta V, Li X H, Singh R 2019 J. Appl. Phys. 125 144501Google Scholar

    [42]

    Qian L X, Wu Z H, Zhang Y Y, Lai P T, Liu X Z, Li Y R 2017 ACS Photonics 4 2203Google Scholar

    [43]

    Alema F, Hertog B, Ledyaev O, Volovik D, Thoma G, Miller R, Osinsky A, Mukhopadhyay P, Bakhshi S, Ali H, Schoenfeld W 2017 Phys. Status Solidi A 214 1600688Google Scholar

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Metrics
  • Abstract views:  5231
  • PDF Downloads:  195
  • Cited By: 0
Publishing process
  • Received Date:  06 March 2021
  • Accepted Date:  22 April 2021
  • Available Online:  07 June 2021
  • Published Online:  05 September 2021

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