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STUDY OF SLIP BY DISLOCATIONS IN GaAs CRYSTAL BY X一RAY TOPOGRAPHY

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STUDY OF SLIP BY DISLOCATIONS IN GaAs CRYSTAL BY X一RAY TOPOGRAPHY

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  • Slip dislocation in In-doped and undoped GaAs singe crystal were investigated by means of X-ray topography. Different configurations of the slip dislocations were observed, which resulted from the different densities of dislocations. The mechanism of the slip dislocations and cellular network structure formation is also discussed preliminarily.
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  • Published Online:  05 April 1989

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