Tungsten-silicon films were deposited on oxidized silicon wafers by direct current magnetron Co-sputtering from a W-Si mixture target. Films were then rapid thermal annealed in vacuum at temperature between 500 and 1000℃ for 15s. The sheet resistance of W-Si films as a function of the annealing temperature shows an anomalous maximum. This phenomenon has been studied by using XRD. We observed that there were W_5_Si_3_ appeared in the annealed film at temperature up to 1100℃, which contributed partly to the sheet resistance.
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