微波阶梯阻抗变换器低气压电晕放电粒子模拟

刘雷; 李永东; 王瑞; 崔万照; 刘纯亮

doi:10.7498/aps.62.025201

摘要

采用3维粒子软件VORPAL对微波阶梯阻抗变换器中的低气压电晕放电过程进行了粒子模拟, 获得了放电过程中带电粒子实空间分布的时间演变图像, 分析并解释了其中低气压电晕放电机理和微放机理之间的关系. 模拟结果表明: 低气压电晕放电的阈值电压随着气压的增长呈现先减小后增加的变化趋势; 并且随着气压的增长, 微放电作用减弱, 低气压电晕放电作用增强. 通过对银和铜两种器壁材料放电阈值的比较, 获得了两种放电机理之间的临界气压.

关键词:

Abstract

The corona discharge process in low pressure N2 in stepped impedance transformer (SIT) is simulated using 3-D particle-in-cell (PIC) software (VORPAL). The evolution of the charged particle spatial distribution during the discharge is obtained. The two main discharge mechanisms, i.e., multipactor and corona discharge, are analyzed. From the simulation results, it can be found that the threshold voltage of breakdown of the SIT first decreases and then increases. In addition, with the increase of the pressure, the multipactor effect weakens while the corona discharge effect strengthens. Through the comparison of the threshold voltages between two kinds of wall materials, i.e., Ag and Cu, the critical pressures between the two discharge mechanisms are achieved.

Keywords:

作者及机构信息

1.
西安交通大学电子物理与器件教育部重点实验室, 西安 710049;

2.
空间微波技术重点实验室, 西安 710100

基金项目: 空间微波技术重点实验室基金(批准号: 9140C530103110C5301)和国家自然科学基金(批准号: 50977076)资助的课题.

Authors and contacts

1.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China;

2.
Science and Technology on Space Microwave Laboratory, Xi'an 710100, China

Funds: Project supported by the National Key Laboratory Foundation of China (Grant No. 9140C530103110C5301), the National Natural Science Foundation of China (Grant No. 50977076).

参考文献

[1]	Oraizi H 1996 IEEE Trans. Microwave Theory Tech. 44 389
[2]	Rasch J, Anderson D, Lisak M, Semenov V E, Puech J 2009 J. Phys. D: Appl. Phys. 42 055210
[3]	Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D 2008 IEEE Trans. Microwave Theory Tech. 56 3072
[4]	Sorolla E, Mattes M 2010 Microwave Rev 16 41
[5]	Ortega T P, Monge J, Marini S, Sanz J, Sorolla E, Mattes M, Vicente M, Gil J, Boria V E, Gimeno B 2010 IEEE Microwave Compon. Lett. 20 214
[6]	Wang R, Zhang N, Li Y, Cui W Z 2011 2011 International Conference on Electronics, Communications and Control (ICECC) Ningbo, China, September 9, 2011 p4517
[7]	Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D, Herren J J 2008 2008 IEEE MTT-S International Microwave Symposium Digest Limoges, France, June 15, 2008 p735
[8]	Rodney J, Vaughan M 1988 IEEE Trans. Electron Devices 35 1172
[9]	Udiljak R 2007 Multipactor in Low Pressure Gas and in Nonuniform RF Field Structures (Sweden: Chalmers University of Technology)
[10]	Nieter C, Cary J R 2004 J. Comput. Phys. 196 448
[11]	Furman M A, Pivi M 2002 Phys. Rev. ST Accel. Beams 5 124404
[12]	Raju G G 2006 Gaseous Electronics-Theory and Practice (1st Ed) (Florida: CRC Press) p230

施引文献

[1]	Oraizi H 1996 IEEE Trans. Microwave Theory Tech. 44 389
[2]	Rasch J, Anderson D, Lisak M, Semenov V E, Puech J 2009 J. Phys. D: Appl. Phys. 42 055210
[3]	Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D 2008 IEEE Trans. Microwave Theory Tech. 56 3072
[4]	Sorolla E, Mattes M 2010 Microwave Rev 16 41
[5]	Ortega T P, Monge J, Marini S, Sanz J, Sorolla E, Mattes M, Vicente M, Gil J, Boria V E, Gimeno B 2010 IEEE Microwave Compon. Lett. 20 214
[6]	Wang R, Zhang N, Li Y, Cui W Z 2011 2011 International Conference on Electronics, Communications and Control (ICECC) Ningbo, China, September 9, 2011 p4517
[7]	Frigui K, Baillargeat D, Verdeyme S, Bila S, Catherinot A, Puech J, Pacaud D, Herren J J 2008 2008 IEEE MTT-S International Microwave Symposium Digest Limoges, France, June 15, 2008 p735
[8]	Rodney J, Vaughan M 1988 IEEE Trans. Electron Devices 35 1172
[9]	Udiljak R 2007 Multipactor in Low Pressure Gas and in Nonuniform RF Field Structures (Sweden: Chalmers University of Technology)
[10]	Nieter C, Cary J R 2004 J. Comput. Phys. 196 448
[11]	Furman M A, Pivi M 2002 Phys. Rev. ST Accel. Beams 5 124404
[12]	Raju G G 2006 Gaseous Electronics-Theory and Practice (1st Ed) (Florida: CRC Press) p230

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