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电离辐射环境下金属-铁电-绝缘体-基底结构铁电场效应晶体管电学性能的模拟

吴传禄 马颖 蒋丽梅 周益春 李建成

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电离辐射环境下金属-铁电-绝缘体-基底结构铁电场效应晶体管电学性能的模拟

吴传禄, 马颖, 蒋丽梅, 周益春, 李建成

Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation

Wu Chuan-Lu, Ma Ying, Jiang Li-Mei, Zhou Yi-Chun, Li Jian-Cheng
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  • 本文利用改进的米勒模型模拟了金属-铁电-绝缘体-基底结构铁电场效应晶体管在电离辐射环境下的铁电薄膜极化、界面电荷密度和电荷迁移率,最终得出在不同辐射总剂量和辐射剂量率下,铁电场效应晶体管的电容和漏源电流曲线. 计算结果表明,总剂量为10 Mrad时,对铁电场效应晶体管的漏源电流和电容影响甚微;总剂量为100 Mrad (1 rad = 102 Gy)时,对其有很明显的影响. 当辐射的剂量率发生变化时,铁电场效应晶体管的电流和电容也会发生改变. 模拟结果表明,铁电场效应晶体管有较强的抗辐射能力.
    This article uses the Miller model to simulate the ferroelectric polarization of the metal-ferroelectrics-insulator-substrate (MFIS) structured ferroelectric field effect transistor (FeFET), interfacial charge concentration, and charge migration rate under ionizing radiation. The capacitance and source-drain current at different total dose and different dose rate are calculated. Results show that the total dose of 0.1 MGy changes slightly the source leakage current and capacitance of the FeFET, and the total dose of 1 MGy leads to a larger variation in these quantities. When the radiation dose rate is varied, the minimal changes in the drain-source current and capacitance are observed. These results suggest that FeFET has a relatively large radiation hardness.
    • 基金项目: 国家自然科学基金(批准号:11172257,61176093)资助的课题.
    • Funds: Project suppoted by the National Natural Science Foundation of China (Grant Nos. 11172257, 61176093).
    [1]

    Philpy S T, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky MT, America, March 18-25, 2000 p377

    [2]

    Verbeck C, Gaucher P 1993 Radiation and its Effects on Components and Systems St. Malo, France, September 13-16, 1993 p166

    [3]

    MacLeodT C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium Portland America, October 25-28, 2009 p24

    [4]

    Zhang X Y, Guo Q, Lu W, Zhang X F, Zheng Q W, Cui J W, Li Y D, Zhou D 2013 Acta. Phys. Sin. 62 156107 (in Chinese) [张兴尧, 郭旗, 陆妩, 张孝富, 郑齐文, 崔江维, 李豫东, 周东 2013 物理学报 62 156107]

    [5]

    Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 IEEE T. Nucl. Sci. 37 1703

    [6]

    Liu B, Ma Y, Zhou Y, Li J 2013 Radiat Eff. Defects Solids 168 115

    [7]

    Usher T D 1998 APS March Meeting Abstracts Los Angeles, America, March 16-20, 1998 p1709

    [8]

    Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin Phys. B 19 056103

    [9]

    Soubra M, Cygler J, Mackay G 1994 Med. Phys. 21 567

    [10]

    He B P, Zhang F Q, Yao Z B 2007 Chin. J. Comput. Phys. 1 109 (in Chinese) [何宝平, 张凤祁, 姚志斌 2007 计算物理 1 109]

    [11]

    Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta. Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 物理学报 61 107803]

    [12]

    Li Z, Xiao Y G, Tang M H, Chen J W, Ding H, Yan S A, Zhou Y C 2014 Mater. Sci. Forum 787 247

    [13]

    Miller S L, McWhorter P J 1992 J. Appl. Phys. 72 5999

    [14]

    Guo Y, Chen J J, He Y B, Liang B, Liu B W 2013 Chin Phys. B 22 046103

    [15]

    Yan S A, Tang M H, Zhao W, Guo H X, Zhang W L, Xu X Y, Wang X D, Ding H, Chen J W, Li Z, Zhou Y C 2014 Chin Phys. B 23 046103

    [16]

    Chauhan R K, Chakrabarti P 2002 Microelectron. J. 33 197

    [17]

    Inza M G, Lipovetzky J, Carbonetto S, Salomone L S, Redin E, Faigon A 2012 Technology and Applicationsin Micro-Nanoelectronics Cordoba, Argentina, August 9-10, 2012 p79

    [18]

    Brews J R 1981 Appl. Solid State Science (New York: Academic Press) pp11-120

    [19]

    Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE T. Electron Dev. 41 2357

    [20]

    Miller S L, Nasby R D, Schwank J R, Rodgers M S, Dressendorfer P V 1990 J. Appl. Phys. 68 6463

    [21]

    Shi Q, Ma Y, Li Y, Zhou Y 2011 Nucl. Instrum. Methods Phys. Res. Sect. B 269 452

  • [1]

    Philpy S T, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky MT, America, March 18-25, 2000 p377

    [2]

    Verbeck C, Gaucher P 1993 Radiation and its Effects on Components and Systems St. Malo, France, September 13-16, 1993 p166

    [3]

    MacLeodT C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium Portland America, October 25-28, 2009 p24

    [4]

    Zhang X Y, Guo Q, Lu W, Zhang X F, Zheng Q W, Cui J W, Li Y D, Zhou D 2013 Acta. Phys. Sin. 62 156107 (in Chinese) [张兴尧, 郭旗, 陆妩, 张孝富, 郑齐文, 崔江维, 李豫东, 周东 2013 物理学报 62 156107]

    [5]

    Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 IEEE T. Nucl. Sci. 37 1703

    [6]

    Liu B, Ma Y, Zhou Y, Li J 2013 Radiat Eff. Defects Solids 168 115

    [7]

    Usher T D 1998 APS March Meeting Abstracts Los Angeles, America, March 16-20, 1998 p1709

    [8]

    Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin Phys. B 19 056103

    [9]

    Soubra M, Cygler J, Mackay G 1994 Med. Phys. 21 567

    [10]

    He B P, Zhang F Q, Yao Z B 2007 Chin. J. Comput. Phys. 1 109 (in Chinese) [何宝平, 张凤祁, 姚志斌 2007 计算物理 1 109]

    [11]

    Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta. Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 物理学报 61 107803]

    [12]

    Li Z, Xiao Y G, Tang M H, Chen J W, Ding H, Yan S A, Zhou Y C 2014 Mater. Sci. Forum 787 247

    [13]

    Miller S L, McWhorter P J 1992 J. Appl. Phys. 72 5999

    [14]

    Guo Y, Chen J J, He Y B, Liang B, Liu B W 2013 Chin Phys. B 22 046103

    [15]

    Yan S A, Tang M H, Zhao W, Guo H X, Zhang W L, Xu X Y, Wang X D, Ding H, Chen J W, Li Z, Zhou Y C 2014 Chin Phys. B 23 046103

    [16]

    Chauhan R K, Chakrabarti P 2002 Microelectron. J. 33 197

    [17]

    Inza M G, Lipovetzky J, Carbonetto S, Salomone L S, Redin E, Faigon A 2012 Technology and Applicationsin Micro-Nanoelectronics Cordoba, Argentina, August 9-10, 2012 p79

    [18]

    Brews J R 1981 Appl. Solid State Science (New York: Academic Press) pp11-120

    [19]

    Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE T. Electron Dev. 41 2357

    [20]

    Miller S L, Nasby R D, Schwank J R, Rodgers M S, Dressendorfer P V 1990 J. Appl. Phys. 68 6463

    [21]

    Shi Q, Ma Y, Li Y, Zhou Y 2011 Nucl. Instrum. Methods Phys. Res. Sect. B 269 452

计量
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  • PDF下载量:  496
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-05-18
  • 修回日期:  2014-06-24
  • 刊出日期:  2014-11-05

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