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硅中位错与蚀斑的对应关系

洪晶 王贵华 刘振茂 叶以正

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硅中位错与蚀斑的对应关系

洪晶, 王贵华, 刘振茂, 叶以正

AN EXPERIMENTAL STUDY OF THE CORRESPONDENCE BETWEEN DISLOCATIONS AND ETCH PITS IN SILICON SINGLE CRYSTALS

HUNG CHING, WANG KWEI-HOA, LIU CHEN-MAO, YEH I-CHENG
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  • 通过实验肯定了硅单晶的化学侵蚀定向方法,找出抛光液的最佳配比及抛光时间。确定了所选定的位错侵蚀剂的侵蚀规范;此侵蚀剂对晶面无选择性,能显示出刃型和螺型位错,以及“新”、“旧”位错。通过长时间侵蚀、逐层侵蚀、劈裂面蚀斑的对应、小角晶界上蚀斑的观察、形变硅单晶中蚀斑排列以及弯曲形变样品中蚀斑密度与曲率半径间的关系的研究等方法,证明了用此侵蚀剂所得的蚀斑确实与位错一一对应。
    Experiments are performed to confirm the chemical etching method for defining the crystallographic orientation of silicon single crystals. The best compositions of the polishing solution for the crystal surface and of the etchant for revealing dislocations are given. The etchant is not sensitive to crystallographic surfaces, and is capable of revealing both edge and screw dislocations, also "new" and "old" dislocations.The following experimental methods are used to verify the correspondence between dislocations and etch pits in the silicon crystals: 1) prolongation of etching time; 2) alternate polishing and etching; 3) etching of matched cleavage faces; 4) observation of dislocations in small-angle tilt boundaries and determination of their geometrical properties; 5) observation and determination of the geometrical arrangement of the etch pit patterns on different crystallographic faces of the specimens under deformation (bending and indentation); 6) checking of the relationship between the radius of curvature and the dislocation density of bent specimens.
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  • 文章访问数:  5873
  • PDF下载量:  480
  • 被引次数: 0
出版历程
  • 收稿日期:  1963-10-30
  • 修回日期:  1964-03-20
  • 刊出日期:  1964-06-05

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