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基于氧化石墨烯的瓦级调Q锁模Tm: LuAG激光器

孙锐 陈晨 令维军 张亚妮 康翠萍 许强

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基于氧化石墨烯的瓦级调Q锁模Tm: LuAG激光器

孙锐, 陈晨, 令维军, 张亚妮, 康翠萍, 许强

Watt-level passively Q-switched mode-locked Tm: LuAG laser with graphene oxide saturable absorber

Sun Rui, Chen Chen, Ling Wei-Jun, Zhang Ya-Ni, Kang Cui-Ping, Xu Qiang
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  • 在Tm: LuAG全固态激光器中实现了以氧化石墨烯可饱和吸收体为锁模启动元件的瓦级被动调Q锁模运转. 本实验装置以可调谐掺钛蓝宝石激光器作为泵浦源, 测得Tm: LuAG固态激光器出光阈值最低为325 mW, 当吸收抽运功率达到3420 mW时, 进入稳定的调Q锁模运行状态. 当抽运功率达到8.1 W时, 对应的最大输出功率为1740 mW, 中心波长为2023 nm, 重复频率为104.2 MHz, 最大单脉冲能量为16.7 nJ, 调制深度接近100%.
    A watt-level passive Q-switched mode-locked operation in Tm: LuAG all-solid-state laser is realized for the first time by using graphene oxide (GO) saturable absorber as a mode-locked starting element. The laser is pumped by a wavelength tunable Ti: sapphire laser operating at 794.2 nm. In this experiment, the maximum continuous-wave (CW) output power of 1440 mW, 2030 mW and 2610 mW are obtained by 1.5%, 3% and 5% output coupled (OC) mirrors respectively, in which the corresponding slope efficiencies are 22.3%, 32.6% and 40.6%, respectively. When the GO is inserted into the cavity, the laser bump threshold is further increased due to more intracavity loss. With a 1.5% OC mirror, the absorbed pump threshold is as low as 325 mW, the maximum output power is 787 mW, and the corresponding slope efficiency is 12.5%. With a 3% OC mirror, the absorbed bump threshold is 351 mW, the maximum output power is 1740 mW, and corresponding slope efficiency is 30.3%. With a 5% OC mirror, the QML operation is not realized due to the increase of intracavity loss. Although the laser pump threshold power of 3% OC mirror differs from that of 1.5% OC mirror by 26 mW, the output power is more than twice higher than that of 1.5% OC mirror. For these reasons, we use a 3% OC mirror in our experiment. In this case, a stable QML operation with a threshold of 3420 mW is obtained. When the pump power reaches 8.1 W, the corresponding maximum output power is 1740 mW, the central wavelength is 2023 nm, the repetition frequency is 104.2 MHz, the maximum single pulse energy is 16.7 nJ, and the modulation depth is close to 100%. According to the symmetrical shape of the mode locked pulse and considering the definition of rise time, we can assume that the duration of the pulse is approximately 1.25 times the pulse rise time. So the width of the mode locked pulse is estimated at about 923.8 ps. The results show that the GO is a promising high power saturable absorber in 2 μm wavelength for the QML solid-state laser. In the next stage, we will increase the pump power, optimize the quality of the GO material, and compensate for the dispersion in the cavity. It is expected to achieve a CW mode-locked operation and femtosecond pulse output.
      通信作者: 令维军, wjlingts@sina.com ; 张亚妮, yanizhang1@163.com
    • 基金项目: 国家自然科学基金(批准号: 61564008, 11774257, 11647008, 11504416)、陕西省国际科技合作与交流项目(批准号: 2018KW-016)和宝鸡市重大科技专项计划项目(批准号: 2015CXNL-1-3)资助的课题.
      Corresponding author: Ling Wei-Jun, wjlingts@sina.com ; Zhang Ya-Ni, yanizhang1@163.com
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61564008, 11774257, 11647008, 11504416), the International Science & Technology Cooperation and Exchanges Project of Shaanxi, China (Grant No. 2018KW-016), the Key Sciences and Technology Project of Baoji City, China (Grant No. 2015CXNL-1-3), and the Key Research Project of Shaanxi University of Science & Technology, China (Grant No. 2018WLXY-01-01).
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    Ling W J, Xia T, Dong Z, Zuo Y Y, Li K, Liu Q, Lu F P, Zhao X L, Wang Y G 2008 Acta Phys. Sin. 67 014201

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    Cho W B, Schmidt A, Yim J H, Choi S Y, Lee S, Rotermund F, Griebner U, Steinmeyer G, Petrov V, Mateos X, Pujol M C, Carvajal J J, Aguiló M, Díaz F 2009 Opt. Express 17 11007Google Scholar

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    Li L, Jiang S, Wang Y, Wang X, Duan L, Mao D, Li Z, Man B, Si J 2015 Opt. Express 23 28698Google Scholar

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    Ma J, Xie G, Zhang J, Yuan P, Tang D, Qian L 2015 IEEE J. Sel. Top. Quantum Electron. 21 50Google Scholar

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    Zhang L, Wang Y G, Yu H J, Zhang S B, Hou W, Lin X C, Li J M 2011 Laser Phys. 21 2072Google Scholar

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    周鼎 2017 博士学位论文 (上海: 上海大学)

    Zhou D 2007 Ph. D. Dissertation (Shanghai: Shanghai University) (in Chinese)

    [20]

    Wu C T, Ju Y L, Wang Q, Wang Z G, Chen F, Zhou R L, Wang Y Z 2009 Laser Phys. Lett. 6 707Google Scholar

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    Chen F, Wu C T, Ju Y L, Yao B Q, Wang Y Z 2012 Laser Phys. 22 371Google Scholar

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    Zeng H, Liu G B, Dai J, Yan Y, Zhu B, He R, Xie L, Xu S, Chen X, Yao W, Cui X 2013 Sci. Rep. 3 1608Google Scholar

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    Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805Google Scholar

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  • 图 1  氧化石墨烯可饱和吸收体 (a)拉曼光谱图; (b)扫描电镜图; (c)实物图

    Fig. 1.  (a) Raman spectrum of GO-SAs; (b) SEM of GO-SAs; (c) photograph of GO-SAs.

    图 2  Tm: LuAG被动锁模激光实验装置图

    Fig. 2.  The experimental setup of Tm: LuAG passively Q-switched mode locked laser.

    图 3  (a)晶体吸收变化图; (b)连续光和锁模输出功率随吸收抽运功率的变化

    Fig. 3.  (a) The change of crystal absorbed power; (b) Relation between average output power and absorbed pump power under continuous-wave and mode-locked operation.

    图 4  锁模脉冲信号的输出光谱

    Fig. 4.  The output spectrum of the mode locking signal pulse.

    图 5  扫描时间为1 ms, 100 μs, 2 μs和10 ns的锁模脉冲序列

    Fig. 5.  Mode-locked pulse trains recorded in 1 ms, 100 μs, 2 μs and 10 ns per division (div) timescales.

  • [1]

    Kaufmann R, Hibst R 1996 Lasers Surg. Med. 19 324Google Scholar

    [2]

    Sorokin E, Sorokina I T, Mandon J, Guelachvili G, Picqué N 2007 Opt. Express 15 16540Google Scholar

    [3]

    Li J, Luo H, Wang L, Liu Y, Yan Z, Zhou K, Zhang L, Turistsyn S K 2015 Sci. Rep. 5 10770Google Scholar

    [4]

    Yao B Q, Shen Y J, Duan X M, Dai T Y, Ju Y L, Wang Y Z 2014 Opt. Lett. 39 6589Google Scholar

    [5]

    Feng T, Yang K, Zhao J, Zhao S, Qiao W, Li T, Dekorsy T, He J, Zheng L, Wang Q 2015 Opt. Express 23 11819Google Scholar

    [6]

    令维军, 夏涛, 董忠, 左银艳, 李可, 刘勍, 路飞平, 赵小龙, 王勇刚 2008 物理学报 67 014201

    Ling W J, Xia T, Dong Z, Zuo Y Y, Li K, Liu Q, Lu F P, Zhao X L, Wang Y G 2008 Acta Phys. Sin. 67 014201

    [7]

    Cho W B, Schmidt A, Yim J H, Choi S Y, Lee S, Rotermund F, Griebner U, Steinmeyer G, Petrov V, Mateos X, Pujol M C, Carvajal J J, Aguiló M, Díaz F 2009 Opt. Express 17 11007Google Scholar

    [8]

    Zou X, Leng Y, Li Y, Feng Y, Zhang P, Hang Y, Wang J 2015 Chin. Opt. Lett. 13 081405

    [9]

    Kong L C, Xie G Q, Yuan P, Qian L J, Wang S X, Yu H H, Zhang H J 2015 Photon. Res. 3 A47Google Scholar

    [10]

    Li L, Jiang S, Wang Y, Wang X, Duan L, Mao D, Li Z, Man B, Si J 2015 Opt. Express 23 28698Google Scholar

    [11]

    Xu S C, Man B Y, Jiang S Z, Chen C S, Yang C, Liu M, Huang Q J, Zhang C, Bi D, Meng X, Liu F Y 2014 Opt. Laser Technol. 56 393Google Scholar

    [12]

    Ma J, Xie G Q, Lü P, Gao W L, Yuan P, Qian L J, Yu H H, Zhang H J, Wang J Y, Tang D Y 2012 Opt. Lett. 37 2085Google Scholar

    [13]

    Ma J, Xie G, Zhang J, Yuan P, Tang D, Qian L 2015 IEEE J. Sel. Top. Quantum Electron. 21 50Google Scholar

    [14]

    Zhu Y, Murali S, Cai W, Li X, Ji W S, Potts J R, Ruoff R S 2010 Adv. Mater. (Weinheim, Ger. ) 22 3906Google Scholar

    [15]

    Zhang L, Wang Y G, Yu H J, Zhang S B, Hou W, Lin X C, Li J M 2011 Laser Phys. 21 2072Google Scholar

    [16]

    Wang Y, Qu Z, Liu J, Tsang Y H 2012 J. Lightwave Technol. 30 3259Google Scholar

    [17]

    Liu J, Wang Y G, Qu Z S, Zheng L H, Su L B, Xu J 2012 Laser Phys. Lett. 9 15Google Scholar

    [18]

    Wu C, Ju Y, Li Y, Wang Z, Wang Y 2008 Chin. Opt. Lett. 6 415Google Scholar

    [19]

    周鼎 2017 博士学位论文 (上海: 上海大学)

    Zhou D 2007 Ph. D. Dissertation (Shanghai: Shanghai University) (in Chinese)

    [20]

    Wu C T, Ju Y L, Wang Q, Wang Z G, Chen F, Zhou R L, Wang Y Z 2009 Laser Phys. Lett. 6 707Google Scholar

    [21]

    Chen F, Wu C T, Ju Y L, Yao B Q, Wang Y Z 2012 Laser Phys. 22 371Google Scholar

    [22]

    Zeng H, Liu G B, Dai J, Yan Y, Zhu B, He R, Xie L, Xu S, Chen X, Yao W, Cui X 2013 Sci. Rep. 3 1608Google Scholar

    [23]

    Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805Google Scholar

    [24]

    Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271Google Scholar

    [25]

    Li Z Y, Zhang B T, Yang J F, He J L, Huang H T, Zuo C H, Xu J L, Yang X Q, Zhao S 2010 Laser Phys. 20 761Google Scholar

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  • 文章访问数:  6905
  • PDF下载量:  54
  • 被引次数: 0
出版历程
  • 收稿日期:  2018-12-19
  • 修回日期:  2019-03-15
  • 上网日期:  2019-05-01
  • 刊出日期:  2019-05-20

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