用触针下分布电阻的光电导衰退测量锗和硅中少数载流子的寿命

庄蔚华; 潘贵生

doi:10.7498/aps.19.191

摘要

研究了光谱成分不同的激发光和不同表面条件下锗和硅在触针下分布电阻的光电导衰退。对体寿命为τ的半导体,当用贯穿光激发、表面复合速度小时,非平衡载流子分布均匀,分布电阻的改变随时间t的变化服从△R=△R0e-t/τ的规律;当用白光激发、表面复合速度小时,非平衡载流子的分布很不均匀,衰退服从△R=△R0t-1/2e-t/τ的规律。但当表面复合速度大时,不管激发光的成分为白光或贯穿光,总是在体内激发的非平

Abstract

The photo-conductive decay of the spreading resistance of Ge and Si is investigated. The influence of the surface recombination velocity and the depth of absorption of the exciting light on the shape of the decay curve are studied in detail. The decay curves obtained are consistent with those predicted by the theory. The conditions required for accurate measurement of bulk lifetime are also discussed.

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用触针下分布电阻的光电导衰退测量锗和硅中少数载流子的寿命

MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD

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