The present paper is a sequel to the accompanying paper I, where a theory is given for the impurity-induced current in germanium tunnel diodes. It is pointed out that for reasons similar to those given in connexion with the impurity-induced current, the phonon-assisted current in germanium diodes should be attributed to a second order process via (0, 0, 0) conduction band minimum rather than the first order process hitherto assumed. By methods similar to those developed in I, the second order current expression is deduced and discussed; in particular, symmetry arguments indicate that for the second order process in germanium diodes, the longitudinal acoustic phonons should be by far the most effective, in agreement with existing experimental evidences.