The chemical etching method has been used to investigate the dislocation "rosette" of silicon single crystal specimens under indentation at temperatures 800-1000℃. Experimental results show that all the dislocations introduced in silicon due to indentation distribute in the 111 slip planes; the dislocation lines are mostly oriented along the and directions. Analysis indicates that dislocation loops with the Burgers vector along the parallel to the 111 surface of indentation and with the Burgers vector along the inclined with the surface of indentation, are present. Discussion of the structure of the dislocation half-loops is given.