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中国物理学会期刊

研究SiC多种多型体连生方式的X射线方法

CSTR: 32037.14.aps.21.503

AN X-RAY METHOD FOR IDENTIFYING COALESCENCE SEQUENCE OF SILICON CARBIDE POLYTYPES

CSTR: 32037.14.aps.21.503
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  • 本文提出了一种研究碳化硅多种类型连生的晶体中连生次序的实验方法。用超声波研磨法将极硬的薄片状碳化硅单晶逐层磨薄并逐次摄取双套劳埃照片。对劳埃法得出的SiC多型类型数据的分析可以确定各种连生多型体的次序和比例。用一晶体的实验结果对Mitchell的碳化硅多型性机理作了讨论。

     

    An X-ray method has been proposed for identifying the coalescence sequences in silicon carbide crystals containing several polytypes in coalescence. The platelet of single crystal silicon carbide is ground layer by layer by ultrasonic technique, and two Laue patterns are taken before and after every layer was ground off. Thus with the aid of these Laue photographs it would be found possible to determine the sequences as well as the ratios of various coalescent polytypes. The experimental results of one crystal were discussed in view of the mechanism of silicon carbide polytypism suggested by Mitchell.

     

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