搜索

x
中国物理学会期刊

四深针法测半导体电阻率的探针游移误差

CSTR: 32037.14.aps.22.798

THE PROBE-WANDER ERROR OF FOUR-PROBE RESISTIVITY MEASUREMENTS ON SEMICONDUCTOR

CSTR: 32037.14.aps.22.798
PDF
导出引用
  • 本文首先导出四探针处于平面上任意位置时求算电阻率的公式,并由此出发获得一包括横向及纵向游移在内的游移误差普遍公式,用此公式可计算出直线探针及方形探针游移误差的大小。此外,还计算出了这两种探针用来测量薄片样品时的探针游移误差。研究指明在作精确测量时游移误差是不容忽视的。最后并讨论到消除或减少深针游移误差的方法。

     

    In this paper a general formula was derived for semiconductor resistivity measurements, in which four probes may be set in any positions. From this formula, we have obtained a general expression for calculating the probe-wander error; and the transverse probe-wander as well as the longitudinal probe-wander error have been considered simultaneously. So, we can evaluate the probe-wander errores of linear probes and square probes. In addition, we have derived the probe-wander error in sheet specimens measurements with these two kinds of probes. Theory has indicated that the probe-wander error cannot be ignored in an accurate measurement. Lastly, we have discussed the methods of eliminating or decreasing the probe-wander error.

     

    目录

    /

    返回文章
    返回