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本文研究了4mm波段硅雪崩二极管剖面的杂质浓度分布。测量并讨论了研制器件的外延层杂质分布特性,和器件杂质分布及其对器件性能的影响。文中阐述了肖特基势垒的基本方程,给出计算曲线;讨论了测量条件及产生误差的主要方面。作为实验技术的改进,我们装置了水银探针,讨论了确定Hg-Si势垒面积的理论依据和测量方法,并获得了Hg-Si势垒高度φms和内建势Vbi的实验值,以及稳定势垒面积的条件。In this paper, the impurity profile of the 4 mm band silicon avalanche diode is studied by means of the characteristics of the Schottky barrier. The characteristics of the impurity profile of the epitaxial layers, the impurity profile of the device and its effects on device performance are measured and discussed.
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中国物理学会期刊
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