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中国物理学会期刊

丝状发光的GaAs注入式半导体激光器中结电流密度与载流子浓度的分布

CSTR: 32037.14.aps.28.21

PROFILES OF JUNCTION CURRENT AND CARRIER-CONCEN-TRATION IN GaAs INJECTION LASERS WITH FILAMENT

CSTR: 32037.14.aps.28.21
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  • 本文从一简单模型出发,计算了丝状发光器件的电流密度、电压、载流子浓度和增益分布。以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。特别是电阻率,对丝区宽度将有显著影响。模型把外电路的可测量与器件的发光特性联系在一起,指出平均工作电流密度与发光丝区的电流密度之明显差别。结果也表明,器件材料的不均匀性对丝的定位将有重要作用。

     

    The profiles of junction current and voltage and carrier-concentration in an injection laser with filament were calculated on the basis of a simple model. Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles. Particularly, the filament width is strongly dependent on the bulk resistivity. The model connects the stimulated radiation characteristics of the device with the measurable quantities of the external circuit. It shows that there is obvious difference between average density of operating current and current density in the filament rigion. It shows also that nonuniformity of material will play an important role in locating the filament.

     

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