By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal 110, 100 and 112 plane blocking halfangle ψ1/2 values were estimated. We have found that the depth of the 110 plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal 110, 111 and 100 crystal plane blocking halfangles