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中国物理学会期刊

替代式合金系统的电阻率

CSTR: 32037.14.aps.29.1395

ELECTRICAL RESISTIVITY OF SUBSTITUTIONAL ALLOYS

CSTR: 32037.14.aps.29.1395
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  • 本文将文献1的无序晶态合金电阻率理论推广到包含长程有序的系统,从而建立了适用于晶态金属,无序及有序替代式合金的Ziman型电阻率理论。根据这个理论我们详细讨论了这类系统电阻率的温度依赖性。文中着重指出:合金系统结构因子的超结构峰对电阻率有重要贡献。这个贡献在低温下是一个T2项,它比电子-电子散射引起的T2项大得多,因而合金系统电阻率在T0+ρa(T/Θ)2+ρi(T/Θ)5的形式。据此,许多A-15化合物正常态电阻率在低温下的反常行为很容易解释。作为例子,我们将低温电阻率的理论表达式与V3Si的测量值作了比较,符合得很好。

     

    The Ziman-type resistivity theory developed in reference 1 for disordered crystalline alloys is extended to the systems in which the long range order exists, so that it can be applied to the crystalline pure metals and ordered and disordered substitutional alloys. On the basis of this theory, we have investigated the temperature dependence of the resistivity in these systems within the one-phonon approximation. It is emphasized that the superstructure peaks in the structure factors of alloys would give a significant contribution to their phonon-induced electrical resistivity. On account of its T2 behavior and its being much larger than that due to electron-electron scattering, the electron-phonon resistivity contributed by superstructure peaks would play an important role in the temperature dependence of resistivity in alloys, which behaves as ρ≈ρ0+ρa(T/Θ)2+ρi(T/Θ)5 in a relatively low temperature range. Therefore the anomaly in low temperature resistivity of some A-15 compounds can easily be explained with our model. As an example, the low temperature expression for resistivity of alloys is fitted to the V3Si data of Milewits, the theory is found to be in good agreement with experimental results.

     

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