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本文提出在金属-非线性晶体界面上实现表面波差频产生远红外辐射的方案。具体地计算了在非共线匹配情况下Al-GaAs界面上远红外辐射的功率。计算中考虑了各介电常数的虚部。It is suggested that far-infrared radiation can be generated by difference-frequency mixing of surface waves on an interface between metal and nonlinear crystal. Particularly, the power of FIR generated on Al-GaAs interface is catculated in the case of noncollinear phase matching. In this calculation, the imaginary part of dielectric constants is considered.







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