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借助于电学及质谱分析方法测定了掺Te,及未掺杂InSb晶体横截面上的杂质浓度分布。结果指出,杂质在小平面上具有明显的反常分凝现象,对于小平面效应的机制进行了讨论,并根据热力学理论给出了一个能满意解释实验结果的具体表式。The impurity distributions on the cross-section of Te-doped and non-doped InSb single crystals are determined by means of Hall technique and mass-spectrum analysis. Results of measurements show clearly that the impurity segregation is anomalous on the facets. These phenomena are discussed in connection with the mechanism of the facet effect. An explicit expression based on thermodynamic considerations is derived and applied to explain the observed anomalous segregation phenomena.







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